Overview
The SMMUN2213LT1G is a digital transistor from onsemi, part of the MUN2213 series. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2213LT1G is packaged in a SOT-23 (Pb-Free) case and is suitable for various applications requiring compact and efficient transistor solutions.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Total Device Dissipation (TA = 25°C) | PD | 246 mW |
| Derate above 25°C | - | 2.0 mW/°C |
| Thermal Resistance, Junction to Ambient | RθJA | 508 °C/W |
| Thermal Resistance, Junction to Lead | RθJL | 174 °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 °C |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | 0.25 Vdc |
| Input Voltage (off) (VCE = 5.0 V, IC = 100 μA) | Vi(off) | 1.2 Vdc |
| Input Voltage (on) (VCE = 0.3 V, IC = 2.0 mA) | Vi(on) | 1.6 Vdc |
| Input Resistor R1 | - | 47 kΩ |
| Resistor Ratio R1/R2 | - | 1.0 |
Key Features
- Simplifies circuit design by integrating a monolithic bias resistor network.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free packaging in SOT-23 case.
- Wide junction and storage temperature range from −55 to +150 °C.
Applications
The SMMUN2213LT1G is versatile and can be used in a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- Industrial control systems where compact and efficient transistor solutions are required.
- Consumer electronics for general-purpose switching and amplification.
- Medical devices where reliability and compact design are crucial.
Q & A
- What is the primary function of the SMMUN2213LT1G? The SMMUN2213LT1G is a digital transistor designed to replace a single transistor and its external resistor bias network.
- What package type is the SMMUN2213LT1G available in? The SMMUN2213LT1G is packaged in a SOT-23 (Pb-Free) case.
- What are the thermal characteristics of the SMMUN2213LT1G? The device has a total dissipation of 246 mW at 25°C, thermal resistance of 508 °C/W (junction to ambient), and 174 °C/W (junction to lead).
- What is the junction and storage temperature range of the SMMUN2213LT1G? The junction and storage temperature range is from −55 to +150 °C.
- Is the SMMUN2213LT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the collector-emitter saturation voltage of the SMMUN2213LT1G? The collector-emitter saturation voltage is 0.25 Vdc.
- What is the input voltage range for the SMMUN2213LT1G? The input voltage (off) is 1.2 Vdc, and the input voltage (on) is 1.6 Vdc.
- How does the SMMUN2213LT1G simplify circuit design? It integrates a monolithic bias resistor network, reducing the need for external resistors and simplifying the circuit design.
- What are the benefits of using the SMMUN2213LT1G in terms of board space and component count? It reduces both board space and component count by integrating the bias resistor network into a single device.
- Is the SMMUN2213LT1G Pb-Free? Yes, it is available in Pb-Free packaging.
