SDTC114YET1G
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onsemi SDTC114YET1G

Manufacturer No:
SDTC114YET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SDTC114YET1G is a digital transistor from onsemi, part of their Bias Resistor Transistor (BRT) series. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes component count. The SDTC114YET1G is particularly useful in applications requiring compact and efficient transistor solutions.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base Cutoff CurrentICBO--100nAdc
Collector-Emitter Cutoff CurrentICEO--500nAdc
Emitter-Base Cutoff CurrentIEBO--0.2mAdc
Collector-Base Breakdown VoltageV(BR)CBO50--Vdc
Collector-Emitter Breakdown VoltageV(BR)CEO50--Vdc
DC Current GainhFE80140--
Collector-Emitter Saturation VoltageVCE(sat)--0.25Vdc
Input Voltage (off)Vi(off)-0.70.5Vdc
Input Voltage (on)Vi(on)1.40.8-Vdc
Output Voltage (on)VOL--0.2Vdc
Output Voltage (off)VOH4.9--Vdc
Input ResistorR17.01013
Resistor RatioR1/R20.170.210.25-
Total Device Dissipation (TA = 25°C)PD200--mW
Thermal Resistance, Junction to AmbientRθJA600--°C/W
Junction and Storage Temperature RangeTJ, Tstg-55 to +150--°C

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Available in various package types including SC-75, SC-70/SOT-323, and others.

Applications

The SDTC114YET1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its compact design and integrated bias resistors make it ideal for space-constrained industrial control circuits.
  • Consumer electronics: It can be used in various consumer electronic devices where space efficiency and simplicity of design are crucial.
  • General-purpose switching: The device is suitable for general-purpose switching applications where a compact, reliable transistor is required.

Q & A

  1. What is the SDTC114YET1G? The SDTC114YET1G is a digital transistor from onsemi that integrates a single transistor with a monolithic bias resistor network.
  2. What are the key benefits of using the SDTC114YET1G? It simplifies circuit design, reduces board space, and minimizes component count.
  3. What are the typical applications for the SDTC114YET1G? It is used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching applications.
  4. Is the SDTC114YET1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  5. What is the maximum total device dissipation at 25°C for the SDTC114YET1G? The maximum total device dissipation at 25°C is 200 mW.
  6. What is the thermal resistance, junction to ambient, for the SDTC114YET1G? The thermal resistance, junction to ambient, is 600 °C/W.
  7. What is the junction and storage temperature range for the SDTC114YET1G? The junction and storage temperature range is -55 to +150 °C.
  8. Is the SDTC114YET1G Pb-free and RoHS compliant? Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  9. What are the available package types for the SDTC114YET1G? It is available in SC-75, SC-70/SOT-323, and other package types.
  10. What is the typical DC current gain for the SDTC114YET1G? The typical DC current gain is 140.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number SDTC114YET1G SDTA114YET1G SDTC114EET1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
Frequency - Transition - - -
Power - Max 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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