Overview
The PDTC114EK,115 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This component is designed for surface mount applications and is part of the discrete semiconductor products family. Although it is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power - Max | 250 mW |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5 mA, 5 V |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
Key Features
- Pre-biased Configuration: The PDTC114EK,115 comes with built-in base and emitter resistors, simplifying circuit design and reducing the number of external components needed.
- Surface Mount Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, making it suitable for modern surface mount technology (SMT) assembly lines.
- Low Power Consumption: With a maximum power dissipation of 250 mW, this transistor is energy-efficient and suitable for low-power applications.
- Compact Size: The small package sizes make it ideal for applications where space is limited.
Applications
The PDTC114EK,115 is suitable for a variety of applications, including:
- General Purpose Amplification: It can be used in small signal amplification circuits due to its pre-biased configuration and low power consumption.
- Switching Circuits: Its NPN configuration and low saturation voltage make it suitable for switching applications.
- Automotive and Industrial Electronics: It can be used in various automotive and industrial control circuits where reliability and compactness are essential.
Q & A
- What is the transistor type of the PDTC114EK,115?
The PDTC114EK,115 is an NPN pre-biased bipolar junction transistor (BJT). - What are the package options for this transistor?
The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages. - What is the maximum collector current of the PDTC114EK,115?
The maximum collector current is 100 mA. - What is the voltage - collector emitter breakdown (Max) for this transistor?
The maximum collector emitter breakdown voltage is 50 V. - Is the PDTC114EK,115 still in production?
No, the PDTC114EK,115 is obsolete and no longer manufactured. - What are the built-in resistors values in the PDTC114EK,115?
The built-in base and emitter resistors are both 22 kOhms. - What is the typical application of the PDTC114EK,115?
It is typically used in general purpose amplification, switching circuits, and various automotive and industrial electronics. - What is the maximum power dissipation of the PDTC114EK,115?
The maximum power dissipation is 250 mW. - What is the DC current gain (hFE) of the PDTC114EK,115?
The minimum DC current gain (hFE) is 60 at 5 mA and 5 V. - What is the Vce saturation (Max) @ Ib, Ic for this transistor?
The Vce saturation (Max) is 150 mV at 500 µA and 10 mA.
