PDTC114EK,115
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NXP USA Inc. PDTC114EK,115

Manufacturer No:
PDTC114EK,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NEXPERIA PDTC114E - NPN RESISTOR
Delivery:
Payment:
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Product Introduction

Overview

The PDTC114EK,115 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This component is designed for surface mount applications and is part of the discrete semiconductor products family. Although it is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
ManufacturerNXP USA Inc.
Transistor TypeNPN - Pre-Biased
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Power - Max250 mW
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5 mA, 5 V
Vce Saturation (Max) @ Ib, Ic150 mV @ 500 µA, 10 mA
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms

Key Features

  • Pre-biased Configuration: The PDTC114EK,115 comes with built-in base and emitter resistors, simplifying circuit design and reducing the number of external components needed.
  • Surface Mount Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, making it suitable for modern surface mount technology (SMT) assembly lines.
  • Low Power Consumption: With a maximum power dissipation of 250 mW, this transistor is energy-efficient and suitable for low-power applications.
  • Compact Size: The small package sizes make it ideal for applications where space is limited.

Applications

The PDTC114EK,115 is suitable for a variety of applications, including:

  • General Purpose Amplification: It can be used in small signal amplification circuits due to its pre-biased configuration and low power consumption.
  • Switching Circuits: Its NPN configuration and low saturation voltage make it suitable for switching applications.
  • Automotive and Industrial Electronics: It can be used in various automotive and industrial control circuits where reliability and compactness are essential.

Q & A

  1. What is the transistor type of the PDTC114EK,115?
    The PDTC114EK,115 is an NPN pre-biased bipolar junction transistor (BJT).
  2. What are the package options for this transistor?
    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.
  3. What is the maximum collector current of the PDTC114EK,115?
    The maximum collector current is 100 mA.
  4. What is the voltage - collector emitter breakdown (Max) for this transistor?
    The maximum collector emitter breakdown voltage is 50 V.
  5. Is the PDTC114EK,115 still in production?
    No, the PDTC114EK,115 is obsolete and no longer manufactured.
  6. What are the built-in resistors values in the PDTC114EK,115?
    The built-in base and emitter resistors are both 22 kOhms.
  7. What is the typical application of the PDTC114EK,115?
    It is typically used in general purpose amplification, switching circuits, and various automotive and industrial electronics.
  8. What is the maximum power dissipation of the PDTC114EK,115?
    The maximum power dissipation is 250 mW.
  9. What is the DC current gain (hFE) of the PDTC114EK,115?
    The minimum DC current gain (hFE) is 60 at 5 mA and 5 V.
  10. What is the Vce saturation (Max) @ Ib, Ic for this transistor?
    The Vce saturation (Max) is 150 mV at 500 µA and 10 mA.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Resistor - Base (R1):- 
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
Frequency - Transition:- 
Power - Max:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PDTC114EK,115 PDTC114EU,115 PDTC114EK,135 PDTC114TK,115 PDTC114YK,115 PDTC115EK,115 PDTC124EK,115 PDTC114EE,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type - NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) - 100 mA 100 mA 100 mA 100 mA 20 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) - 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) - 10 kOhms 10 kOhms 10 kOhms 10 kOhms 100 kOhms 22 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 10 kOhms 10 kOhms - 47 kOhms 100 kOhms 22 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 30 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V 100 @ 5mA, 5V 80 @ 5mA, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic - 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) - 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - - 230 MHz
Power - Max - 200 mW 250 mW 250 mW 250 mW 250 mW 250 mW 150 mW
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case - SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Supplier Device Package - SOT-323 SMT3; MPAK SMT3; MPAK SMT3; MPAK SMT3; MPAK SMT3; MPAK SC-75

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