BF1202WR,115
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NXP USA Inc. BF1202WR,115

Manufacturer No:
BF1202WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 10V 30MA SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1202WR,115 is a dual-gate N-channel RF MOSFET produced by NXP USA Inc. This component is designed for high-frequency applications, particularly in RF and microwave circuits. Although the product is no longer in active manufacturing, it remains relevant for legacy systems and specific design requirements.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)6 V
VGS (Gate-Source Voltage)6 V
ID (Drain Current)See datasheet for specific values
Package TypeSOT343R
Operating TemperatureTypically -55°C to 150°C

Key Features

  • Dual-gate N-channel RF MOSFET for high-frequency applications.
  • Low noise figure and high gain, making it suitable for RF amplifiers and switches.
  • Compact SOT343R package for space-efficient designs.
  • High reliability and stability in various operating conditions.

Applications

  • RF and microwave circuits.
  • Wireless communication systems.
  • Radio frequency amplifiers and switches.
  • Legacy systems requiring specific RF MOSFET characteristics.

Q & A

  1. What is the BF1202WR,115?

    The BF1202WR,115 is a dual-gate N-channel RF MOSFET produced by NXP USA Inc.

  2. What is the typical application of the BF1202WR,115?

    It is typically used in RF and microwave circuits, including wireless communication systems and RF amplifiers.

  3. What is the package type of the BF1202WR,115?

    The package type is SOT343R.

  4. Is the BF1202WR,115 still in production?

    No, the BF1202WR,115 is no longer manufactured but can be found in legacy systems or through alternative suppliers.

  5. What are the key features of the BF1202WR,115?

    Key features include dual-gate N-channel configuration, low noise figure, high gain, and a compact package.

  6. What is the operating temperature range of the BF1202WR,115?

    The operating temperature range is typically -55°C to 150°C.

  7. Where can I find the datasheet for the BF1202WR,115?

    The datasheet can be found on official NXP websites or through authorized distributors like Digi-Key and Mouser.

  8. What are some alternatives to the BF1202WR,115?

    Alternatives can be found by consulting with NXP or checking with distributors for similar RF MOSFET products.

  9. Can the BF1202WR,115 be used in high-power applications?

    No, it is designed for RF and microwave applications, not high-power applications.

  10. How do I ensure the authenticity of the BF1202WR,115?

    Purchase from authorized distributors or directly from NXP to ensure authenticity.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30.5dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:10 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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In Stock

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Same Series
BF1202R,215
BF1202R,215
MOSFET 2N-CH 10V 30MA SOT143R
BF1202,215
BF1202,215
MOSFET 2N-CH 10V 30MA SOT143B
BF1202WR,115
BF1202WR,115
MOSFET 2N-CH 10V 30MA SOT343R

Similar Products

Part Number BF1202WR,115 BF1212WR,115 BF1202WR,135 BF1201WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30.5dB 30dB 30.5dB 29dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 0.9dB 0.9dB 1dB
Current - Test 12 mA 12 mA 12 mA 15 mA
Power - Output - - - -
Voltage - Rated 10 V 6 V 10 V 10 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

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