PD57060-E
  • Share:

STMicroelectronics PD57060-E

Manufacturer No:
PD57060-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 65V 945MHZ PWRSO10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD57060-E is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET manufactured by STMicroelectronics. This device is designed for high gain and broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz, boasting excellent gain, linearity, and ruggedness.

Key Specifications

ParameterValue
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)
Operating Voltage28 V
Frequency RangeUp to 1 GHz
Peak PowerUp to 1.2 kW

Key Features

  • High gain and broad band performance
  • Excellent linearity and ruggedness
  • Operates at 28 V in common source mode
  • Frequency range up to 1 GHz
  • High peak power capability (up to 1.2 kW)
  • Infinite:1 VSWR ruggedness capability

Applications

The PD57060-E is suitable for various high-frequency applications, including commercial and industrial RF systems. It is particularly useful in scenarios requiring high gain, broad band performance, and high peak power handling, such as in RF amplifiers, transmitters, and other high-frequency electronic devices.

Q & A

  1. What is the PD57060-E? The PD57060-E is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.
  2. Who manufactures the PD57060-E? The PD57060-E is manufactured by STMicroelectronics.
  3. What is the operating voltage of the PD57060-E? The PD57060-E operates at 28 V in common source mode.
  4. What is the frequency range of the PD57060-E? The PD57060-E operates at frequencies up to 1 GHz.
  5. What is the peak power capability of the PD57060-E? The PD57060-E has a peak power capability of up to 1.2 kW.
  6. Is the PD57060-E RoHs compliant? Yes, the PD57060-E is RoHs compliant with Ecopack2.
  7. What is the package type of the PD57060-E? The PD57060-E comes in a Tube packing type.
  8. What are the ECCN codes for the PD57060-E? The ECCN US code is EAR99, and the ECCN EU code is NEC.
  9. What are the key features of the PD57060-E? High gain, broad band performance, excellent linearity, and high ruggedness.
  10. What are typical applications for the PD57060-E? Commercial and industrial RF systems, RF amplifiers, and transmitters.

Product Attributes

Transistor Type:LDMOS
Frequency:945MHz
Gain:14.3dB
Voltage - Test:28 V
Current Rating (Amps):7A
Noise Figure:- 
Current - Test:100 mA
Power - Output:60W
Voltage - Rated:65 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

$56.34
19

Please send RFQ , we will respond immediately.

Same Series
PD57060S-E
PD57060S-E
FET RF 65V 945MHZ PWRSO10
PD57060TR-E
PD57060TR-E
FET RF 65V 945MHZ PWRSO-10
PD57060STR-E
PD57060STR-E
FET RF 65V 945MHZ PWRSO-10

Similar Products

Part Number PD57060-E PD57070-E PD57060S-E PD57030-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency 945MHz 945MHz 945MHz 945MHz
Gain 14.3dB 14.7dB 14.3dB 14dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) 7A 7A 7A 4A
Noise Figure - - - -
Current - Test 100 mA 250 mA 100 mA 50 mA
Power - Output 60W 70W 60W 30W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO PowerSO-10RF (Formed Lead) PowerSO-10RF (Straight Lead) 10-PowerSO

Related Product By Categories

MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT