PD57060-E
  • Share:

STMicroelectronics PD57060-E

Manufacturer No:
PD57060-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 65V 945MHZ PWRSO10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD57060-E is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET manufactured by STMicroelectronics. This device is designed for high gain and broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz, boasting excellent gain, linearity, and ruggedness.

Key Specifications

ParameterValue
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)
Operating Voltage28 V
Frequency RangeUp to 1 GHz
Peak PowerUp to 1.2 kW

Key Features

  • High gain and broad band performance
  • Excellent linearity and ruggedness
  • Operates at 28 V in common source mode
  • Frequency range up to 1 GHz
  • High peak power capability (up to 1.2 kW)
  • Infinite:1 VSWR ruggedness capability

Applications

The PD57060-E is suitable for various high-frequency applications, including commercial and industrial RF systems. It is particularly useful in scenarios requiring high gain, broad band performance, and high peak power handling, such as in RF amplifiers, transmitters, and other high-frequency electronic devices.

Q & A

  1. What is the PD57060-E? The PD57060-E is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.
  2. Who manufactures the PD57060-E? The PD57060-E is manufactured by STMicroelectronics.
  3. What is the operating voltage of the PD57060-E? The PD57060-E operates at 28 V in common source mode.
  4. What is the frequency range of the PD57060-E? The PD57060-E operates at frequencies up to 1 GHz.
  5. What is the peak power capability of the PD57060-E? The PD57060-E has a peak power capability of up to 1.2 kW.
  6. Is the PD57060-E RoHs compliant? Yes, the PD57060-E is RoHs compliant with Ecopack2.
  7. What is the package type of the PD57060-E? The PD57060-E comes in a Tube packing type.
  8. What are the ECCN codes for the PD57060-E? The ECCN US code is EAR99, and the ECCN EU code is NEC.
  9. What are the key features of the PD57060-E? High gain, broad band performance, excellent linearity, and high ruggedness.
  10. What are typical applications for the PD57060-E? Commercial and industrial RF systems, RF amplifiers, and transmitters.

Product Attributes

Transistor Type:LDMOS
Frequency:945MHz
Gain:14.3dB
Voltage - Test:28 V
Current Rating (Amps):7A
Noise Figure:- 
Current - Test:100 mA
Power - Output:60W
Voltage - Rated:65 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

$56.34
19

Please send RFQ , we will respond immediately.

Same Series
PD57060S-E
PD57060S-E
FET RF 65V 945MHZ PWRSO10
PD57060TR-E
PD57060TR-E
FET RF 65V 945MHZ PWRSO-10
PD57060STR-E
PD57060STR-E
FET RF 65V 945MHZ PWRSO-10

Similar Products

Part Number PD57060-E PD57070-E PD57060S-E PD57030-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency 945MHz 945MHz 945MHz 945MHz
Gain 14.3dB 14.7dB 14.3dB 14dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) 7A 7A 7A 4A
Noise Figure - - - -
Current - Test 100 mA 250 mA 100 mA 50 mA
Power - Output 60W 70W 60W 30W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO PowerSO-10RF (Formed Lead) PowerSO-10RF (Straight Lead) 10-PowerSO

Related Product By Categories

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
BLA6H0912-500112
BLA6H0912-500112
NXP USA Inc.
BLA6H0912-500 - LDMOS AVIONICS R
BLF6G22LS-40P,118
BLF6G22LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BF908,215
BF908,215
NXP USA Inc.
MOSFET N-CH 12V 40MA SOT143B
PD57006S
PD57006S
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA