Transistors - FETs, MOSFETs - RF

Category Introduction

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.

Product List

337 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusTransistor TypeFrequencyGainVoltage - TestCurrent Rating (Amps)Noise FigureCurrent - TestPower - OutputVoltage - RatedPackage / CaseSupplier Device Package
PD57060-E
PD57060-E
FET RF 65V 945MHZ PWRSO10
STMicroelectronics
19 $56.34
Tube ActiveLDMOS945MHz14.3dB28 V7A-100 mA60W65 VPowerSO-10 Exposed Bottom Pad10-PowerSO
BLF183XRU
BLF183XRU
RF FET LDMOS 135V 28DB SOT1121A
Ampleon USA Inc.
7 $136.66
Tray ActiveLDMOS (Dual), Common Source108MHz28dB50 V--100 mA350W135 VSOT-1121ALDMOST
BLF571,112
BLF571,112
RF MOSFET LDMOS 50V SOT467C
Ampleon USA Inc.
7 $147.68
Tray ActiveLDMOS225MHz27.5dB50 V3.6A-50 mA20W110 VSOT-467CSOT467C
BLF642,112
BLF642,112
RF MOSFET LDMOS 32V SOT467C
Ampleon USA Inc.
3 $163.46
Tray ActiveLDMOS1.3GHz19dB32 V--200 mA35W65 VSOT-467CSOT467C
BLF645,112
BLF645,112
RF FET LDMOS 65V 16DB SOT540A
Ampleon USA Inc.
2 $183.33
Tray ActiveLDMOS (Dual), Common Source1.3GHz16.5dB32 V32A-900 mA100W65 VSOT-540ALDMOST
BLF188XRGJ
BLF188XRGJ
RF FET LDMOS 135V 24DB SOT1248C
Ampleon USA Inc.
3 $194.91
Tape & Reel (TR) ActiveLDMOS (Dual), Common Source108MHz24.4dB50 V--40 mA1400W135 VSOT-1248CCDFM4
BLF647P,112
BLF647P,112
RF FET LDMOS 65V 18DB SOT1121A
Ampleon USA Inc.
3 $214.26
Tray ActiveLDMOS (Dual), Common Source1.3GHz18dB32 V--100 mA200W65 VSOT-1121ALDMOST
BLF647PS,112
BLF647PS,112
RF FET LDMOS 65V 17DB SOT1121B
Ampleon USA Inc.
2 $215.94
Tray ActiveLDMOS (Dual), Common Source1.3GHz17.5dB32 V--100 mA200W65 VSOT-1121BLDMOST
BLF888A,112
BLF888A,112
RF FET LDMOS 110V 21DB SOT539A
Ampleon USA Inc.
6 $232.68
Tray Not For New DesignsLDMOS (Dual), Common Source860MHz21dB50 V--1.3 A600W110 VSOT-539ASOT539A
BLF574,112
BLF574,112
RF FET LDMOS 110V 26.5DB SOT539A
Ampleon USA Inc.
3 $324.88
Tray ActiveLDMOS (Dual), Common Source225MHz26.5dB50 V56A-1 A400W110 VSOT-539ASOT539A
MMBF4416A
MMBF4416A
JFET N-CH 35V 15MA SOT23
onsemi
3 $0.44
Tape & Reel (TR) ActiveN-Channel JFET400MHz-15 V15mA4dB5 mA-35 VTO-236-3, SC-59, SOT-23-3SOT-23-3
MMBFJ211
MMBFJ211
JFET N-CH 25V 20MA SOT23
onsemi
1,147 $0.42
Tape & Reel (TR) ActiveN-Channel JFET---20mA---25 VTO-236-3, SC-59, SOT-23-3SOT-23-3
2SK3557-6-TB-E
2SK3557-6-TB-E
RF MOSFET N-CH JFET 5V 3CP
onsemi
1,571 $0.57
Tape & Reel (TR) ActiveN-Channel JFET1kHz-5 V50mA1dB1 mA200mW15 VTO-236-3, SC-59, SOT-23-33-CP
AFM907NT1
AFM907NT1
RF MOSFET LDMOS 7.5V 10-DFN
NXP USA Inc.
36 $3.11
Tape & Reel (TR) ActiveLDMOS136MHz ~ 941MHz-10.8 V10µA-100 mA8.4W30 V16-VDFN Exposed Pad16-DFN (4x6)
AFT05MS031NR1
AFT05MS031NR1
FET RF 40V 520MHZ TO-270-2
NXP USA Inc.
6 $13.76
Tape & Reel (TR) ActiveLDMOS520MHz17.7dB13.6 V--10 mA31W40 VTO-270AATO-270-2
MRF101AN
MRF101AN
RF TRANSISTOR 100W TO-220
NXP USA Inc.
4 $27.33
Tube ActiveLDMOS1.8MHz ~ 250MHz21.1dB50 V10µA-100 mA115W133 VTO-220-3TO-220-3
CGH40010F
CGH40010F
RF MOSFET HEMT 28V 440166
Wolfspeed, Inc.
12 $69.74
GaN Tray Not For New DesignsHEMT0Hz ~ 6GHz14.5dB28 V3.5A-200 mA12.5W84 V440166440166
MRFE6VS25LR5
MRFE6VS25LR5
FET RF 133V 512MHZ NI360L
NXP USA Inc.
9 $94.62
Tape & Reel (TR) ActiveLDMOS512MHz25.9dB50 V--10 mA25W133 VNI-360NI-360
BLF881S,112
BLF881S,112
RF MOSFET LDMOS 50V LDMOST
Ampleon USA Inc.
11 $104.84
Tray ActiveLDMOS860MHz21dB50 V--500 mA140W104 VSOT-467BSOT-467B
BLF184XRU
BLF184XRU
RF FET LDMOS 135V 23DB SOT1214A
Ampleon USA Inc.
4 $165.46
Tray ActiveLDMOS (Dual), Common Source108MHz23.9dB50 V--100 mA700W135 VSOT-1214ASOT1214A

About RF FETs & RF MOSFETs

What are RF FETs & RF MOSFETs?

RF FETs

Field-effect transistors (FETs) are a class of transistors that control electrical behavior using an electric field. They are pivotal in amplifying or switching electronic signals. Among the various types of FETs, RF FETs (Radio Frequency Field-effect Transistors) are specialized for high-frequency applications. RF FETs are designed to operate efficiently at radio frequencies, typically ranging from a few megahertz (MHz) to several gigahertz (GHz). These transistors are crucial in amplifying weak RF signals, ensuring minimal distortion and high efficiency in communication systems.

RF FETs function by utilizing the electric field to control the conductivity of a channel in a semiconductor material. When a voltage is applied to the gate terminal, it modulates the current flow between the source and drain terminals, allowing for precise control of high-frequency signals. Their ability to handle high power levels and frequencies makes them indispensable in modern RF applications.

RF MOSFETs

MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are a type of transistor used for amplifying or switching electronic signals. They are fundamental components in modern electronics, offering high efficiency and fast switching capabilities. RF MOSFETs, a specialized subset of MOSFETs, are designed to operate at radio frequencies, typically ranging from 3 kHz to 300 GHz. These components are crucial in applications requiring high-frequency signal amplification and modulation, such as in communication systems. RF MOSFETs work by controlling the voltage and current flow between the source and drain terminals, with the gate terminal modulating the flow based on the input signal. Their ability to handle high power levels and frequencies makes them indispensable in RF applications.

Types of RF FETs

MOSFETs (Metal-Oxide-Semiconductor FETs)

MOSFETs are widely used in RF applications due to their high input impedance and fast switching capabilities. They are ideal for low to medium power applications and are commonly found in RF amplifiers and oscillators. Their ability to operate at high frequencies with minimal power loss makes them a popular choice in consumer electronics and communication devices.

GaN FETs (Gallium Nitride FETs)

GaN FETs are known for their high efficiency and power density, making them suitable for high-power RF applications. They are often used in radar systems, satellite communications, and wireless infrastructure. GaN FETs can operate at higher voltages and temperatures compared to traditional silicon-based FETs, providing superior performance in demanding environments.

SiC FETs (Silicon Carbide FETs)

SiC FETs offer excellent thermal conductivity and high breakdown voltage, making them ideal for high-power and high-frequency applications. They are commonly used in RF power amplifiers and industrial RF heating systems. SiC FETs provide robust performance in harsh conditions, ensuring reliability and longevity in critical applications.

Types of RF MOSFETs

1. LDMOS (Laterally Diffused Metal Oxide Semiconductor)

LDMOS transistors are widely used in RF applications due to their high power efficiency and robustness. They are particularly favored in base station amplifiers for cellular networks and broadcast transmitters. LDMOS devices are known for their linearity and ability to handle high power levels, making them ideal for applications requiring consistent performance over a wide frequency range.

2. GaN (Gallium Nitride) RF MOSFETs

GaN RF MOSFETs are renowned for their high electron mobility and thermal conductivity, allowing them to operate at higher voltages and temperatures compared to silicon-based transistors. These characteristics make GaN devices suitable for high-frequency applications such as satellite communications, radar systems, and point-to-point microwave links. Their efficiency and power density are unmatched, providing significant advantages in compact and high-performance designs.

3. SiC (Silicon Carbide) RF MOSFETs

SiC RF MOSFETs offer excellent thermal stability and high breakdown voltage, making them suitable for high-power RF applications. They are often used in industrial RF heating, power amplifiers, and other applications where high efficiency and reliability are paramount. SiC devices can operate at higher temperatures, reducing the need for extensive cooling systems and enhancing overall system efficiency.

How to choose RF FETs?

When selecting RF FETs, several key parameters must be considered to ensure optimal performance:

  • Frequency Range: Choose an RF FET that can operate efficiently within the desired frequency range of your application.
  • Power Handling: Ensure the FET can handle the required power levels without degradation.
  • Efficiency: Look for FETs with high efficiency to minimize power loss and heat generation.
  • Thermal Management: Consider the thermal characteristics and cooling requirements of the FET.
  • Reliability: Evaluate the supplier's reputation and product reliability through reviews and performance data.

Environmental factors such as temperature, humidity, and potential exposure to harsh conditions should also be considered. Installation requirements, including mounting and cooling solutions, must be assessed to ensure the FET operates within its specified limits.

How to choose RF MOSFETs?

When selecting RF MOSFETs, several key parameters must be considered to ensure optimal performance:

  • Frequency Range: Ensure the MOSFET can handle the desired frequency range of your application.
  • Power Output: Choose a device that can deliver the required power levels without compromising efficiency.
  • Thermal Management: Evaluate the thermal characteristics to ensure the device can operate within the desired temperature range.
  • Linearity: Consider the linearity of the MOSFET to maintain signal integrity, especially in communication applications.
  • Reliability: Assess the reliability and quality of the MOSFET by reviewing supplier certifications and customer reviews.

Environmental factors such as humidity, temperature, and potential exposure to corrosive elements should also be considered. Installation requirements, including mounting and cooling solutions, must be evaluated to ensure compatibility with the overall system design.

Applications of RF FETs & RF MOSFETs

Radio Frequency Field Effect Transistors (RF FETs) and Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors (RF MOSFETs) are pivotal components in the realm of discrete semiconductor products. These devices are engineered to amplify or switch electronic signals in the radio frequency (RF) spectrum, typically ranging from 3 kHz to 300 GHz. Their unique properties make them indispensable across a variety of industries, each leveraging their capabilities to enhance communication, control, and efficiency.

Applications of RF FETs & RF MOSFETs

1. Telecommunications

In the telecommunications industry, RF FETs and RF MOSFETs are integral to the development of mobile phones, satellite communication systems, and wireless networking equipment. These components are used to amplify signals, ensuring clear and reliable communication over long distances. They are also crucial in the design of base stations and repeaters, where they help in boosting signal strength and maintaining the integrity of data transmission.

2. Aerospace and Defense

The aerospace and defense sectors utilize RF FETs and RF MOSFETs in radar systems, electronic warfare, and communication devices. These components are essential for detecting and tracking objects, as well as for secure communication in challenging environments. Their ability to operate at high frequencies and withstand extreme conditions makes them ideal for military applications, where reliability and precision are paramount.

3. Automotive Industry

In the automotive industry, RF FETs and RF MOSFETs are employed in advanced driver-assistance systems (ADAS), vehicle-to-everything (V2X) communication, and infotainment systems. They facilitate the transmission and reception of RF signals, enabling features such as adaptive cruise control, collision avoidance, and seamless connectivity between vehicles and infrastructure. These components contribute to the safety and convenience of modern vehicles.

4. Consumer Electronics

Consumer electronics, including televisions, radios, and smart home devices, benefit from the use of RF FETs and RF MOSFETs. These components are used to enhance signal reception and processing, ensuring high-quality audio and video output. In smart home devices, they enable wireless communication between various gadgets, contributing to the seamless integration of technology in everyday life.

5. Medical Equipment

In the medical field, RF FETs and RF MOSFETs are utilized in imaging systems, such as MRI and ultrasound machines, as well as in wireless medical devices. They play a crucial role in signal amplification and processing, allowing for precise imaging and real-time data transmission. These components help in improving diagnostic accuracy and patient monitoring, ultimately enhancing healthcare outcomes.

In conclusion, RF FETs and RF MOSFETs are versatile components that find applications across diverse industries. Their ability to handle high-frequency signals and provide reliable performance makes them a cornerstone in the advancement of technology and communication systems.