BLF574,112
  • Share:

Ampleon USA Inc. BLF574,112

Manufacturer No:
BLF574,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 110V 26.5DB SOT539A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF574,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This device is optimized for broadcast and industrial applications, operating within the HF to 500 MHz frequency band. It offers a nominal output power of 500 W to 600 W, making it suitable for demanding RF applications. The BLF574,112 has been transferred from Ampleon to Flip Electronics.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range10500MHz
P L(1dB)nominal output power at 1 dB gain compressionTest signal: CW600W
G ppower gainP L = 400 W; V DS = 50 V2526.528dB
RL ininput return lossV DS = 50 V-20-13dB
η Ddrain efficiencyP L = 400 W; V DS = 50 V; f = 225 MHz; I Dq = 1000 mA6670%
V DSdrain-source voltage50V

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications

Q & A

  1. What is the frequency range of the BLF574,112?
    The BLF574,112 operates within the frequency range of 10 MHz to 500 MHz.
  2. What is the nominal output power of the BLF574,112?
    The nominal output power at 1 dB gain compression is 600 W.
  3. What is the typical power gain of the BLF574,112?
    The typical power gain is 26.5 dB.
  4. What is the drain efficiency of the BLF574,112?
    The drain efficiency is typically 70% at P L = 400 W, V DS = 50 V, f = 225 MHz, and I Dq = 1000 mA.
  5. Is the BLF574,112 compliant with any environmental directives?
    Yes, it is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.
  6. What are the primary applications of the BLF574,112?
    The primary applications include broadcast transmitter and industrial, scientific, and medical (ISM) applications.
  7. What is the package type of the BLF574,112?
    The package type is SOT539A.
  8. Has the BLF574,112 been transferred to another company?
    Yes, it has been transferred from Ampleon to Flip Electronics.
  9. What is the typical drain-source voltage for the BLF574,112?
    The typical drain-source voltage is 50 V.
  10. Does the BLF574,112 have integrated ESD protection?
    Yes, it has integrated ESD protection.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:225MHz
Gain:26.5dB
Voltage - Test:50 V
Current Rating (Amps):56A
Noise Figure:- 
Current - Test:1 A
Power - Output:400W
Voltage - Rated:110 V
Package / Case:SOT-539A
Supplier Device Package:SOT539A
0 Remaining View Similar

In Stock

$324.88
3

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF574,112 BLF578,112 BLF544,112 BLF571,112 BLF573,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Obsolete Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source N-Channel LDMOS LDMOS
Frequency 225MHz 225MHz 960MHz 225MHz 225MHz
Gain 26.5dB 24dB 7dB 27.5dB 27.2dB
Voltage - Test 50 V 50 V 28 V 50 V 50 V
Current Rating (Amps) 56A 88A 3.5A 3.6A 42A
Noise Figure - - - - -
Current - Test 1 A 40 mA 40 mA 50 mA 900 mA
Power - Output 400W 1200W 20W 20W 300W
Voltage - Rated 110 V 110 V 65 V 110 V 110 V
Package / Case SOT-539A SOT-539A SOT-171A SOT-467C SOT-502A
Supplier Device Package SOT539A SOT539A CDFM6 SOT467C SOT502A

Related Product By Categories

AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BF998WR,115
BF998WR,115
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT343R
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
PD57006-E
PD57006-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
PD84001
PD84001
STMicroelectronics
FET RF 18V 870MHZ
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BF909AWR,115
BF909AWR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143R

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G20-180PN,112
BLF6G20-180PN,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539A
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO