A2T23H300-24SR6
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NXP USA Inc. A2T23H300-24SR6

Manufacturer No:
A2T23H300-24SR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC TRANS RF LDMOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2T23H300-24SR6 is a high-performance RF power transistor manufactured by NXP USA Inc. This device is part of the Airfast RF Power LDMOS family, designed for high-power RF applications in the 2300-2400 MHz frequency range. It is particularly suited for use in base stations and other wireless infrastructure equipment.

Key Specifications

ParameterValue
Frequency Range2300-2400 MHz
Average Power Output66 W
Drain-Source Voltage (Vds)65 V
Gate-Source Voltage (Vgs)0.7 Vdc
Drain Current (Idq)750 mA
Package TypeNI-1230S
Pins7
RoHS StatusLead free / RoHS compliant

Key Features

  • High power output of 66 W average power in the 2300-2400 MHz frequency range.
  • High efficiency and reliability, making it suitable for demanding RF applications.
  • NI-1230S package with 7 pins, providing good thermal management and ease of integration.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • Operates at a drain-source voltage of 65 V and gate-source voltage of 0.7 Vdc.

Applications

The A2T23H300-24SR6 is primarily used in wireless infrastructure equipment such as base stations, cellular networks, and other high-power RF applications. It is also suitable for use in broadcast transmitters, radar systems, and other high-frequency communication devices.

Q & A

  1. What is the frequency range of the A2T23H300-24SR6? The frequency range is 2300-2400 MHz.
  2. What is the average power output of the A2T23H300-24SR6? The average power output is 66 W.
  3. What is the drain-source voltage (Vds) of the A2T23H300-24SR6? The drain-source voltage is 65 V.
  4. What is the gate-source voltage (Vgs) of the A2T23H300-24SR6? The gate-source voltage is 0.7 Vdc.
  5. What package type does the A2T23H300-24SR6 use? The package type is NI-1230S with 7 pins.
  6. Is the A2T23H300-24SR6 RoHS compliant? Yes, it is lead-free and RoHS compliant.
  7. What are the primary applications of the A2T23H300-24SR6? It is used in wireless infrastructure equipment such as base stations and other high-power RF applications.
  8. What is the typical drain current (Idq) of the A2T23H300-24SR6? The typical drain current is 750 mA.
  9. Who is the manufacturer of the A2T23H300-24SR6? The manufacturer is NXP USA Inc.
  10. Where can I find more detailed specifications for the A2T23H300-24SR6? Detailed specifications can be found on the official NXP website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:2.3GHz
Gain:14.9dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:750 mA
Power - Output:66W
Voltage - Rated:65 V
Package / Case:NI-1230-4LS2L
Supplier Device Package:NI-1230-4LS2L
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Similar Products

Part Number A2T23H300-24SR6 A2T26H300-24SR6
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 2.3GHz 2.5GHz
Gain 14.9dB 14.5dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 750 mA 800 mA
Power - Output 66W 60W
Voltage - Rated 65 V 65 V
Package / Case NI-1230-4LS2L NI-1230-4LS2L
Supplier Device Package NI-1230-4LS2L NI-1230-4LS2L

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