BF1212R,215
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NXP USA Inc. BF1212R,215

Manufacturer No:
BF1212R,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT143R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc. This component is designed for high-performance applications in the RF domain, particularly in gain-controlled low noise VHF and UHF amplifiers. It is encapsulated in the SOT143R package, ensuring compact and efficient integration into various electronic systems.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VDS (Drain-Source Voltage)6V
ID (Drain Current)30mA
Ptot (Total Power Dissipation)180mW
Yfs (Forward Transfer Admittance)283343mS
Cig1-ss (Input Capacitance at Gate 1)1.72.2pF
Crss (Reverse Transfer Capacitance)f = 1 MHz1530fF
Fnoise (Noise Figure)f = 800 MHz1.11.8dB
Tj (Junction Temperature)150°C
Gain30dB
Frequency400MHz

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Excellent low frequency noise performance.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
  • Integrated diodes between gates and source protect against excessive input voltage surges.

Applications

The BF1212R,215 is primarily used in gain-controlled low noise VHF and UHF amplifiers. It is particularly suitable for applications in digital and analog television tuner systems, where low noise and high gain stability are crucial.

Q & A

  1. What is the BF1212R,215? The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc.
  2. What package type does the BF1212R,215 use? The BF1212R,215 is encapsulated in the SOT143R package.
  3. What is the maximum drain-source voltage of the BF1212R,215? The maximum drain-source voltage is 6V.
  4. What is the typical forward transfer admittance of the BF1212R,215? The typical forward transfer admittance is 33 mS.
  5. What is the noise figure of the BF1212R,215 at 800 MHz? The noise figure at 800 MHz is typically 1.8 dB.
  6. What are the primary applications of the BF1212R,215? The primary applications include gain-controlled low noise VHF and UHF amplifiers, especially in digital and analog television tuner systems.
  7. What is the maximum junction temperature of the BF1212R,215? The maximum junction temperature is 150°C.
  8. Does the BF1212R,215 have built-in protection against voltage surges? Yes, it has integrated diodes between gates and source to protect against excessive input voltage surges.
  9. What is the gain of the BF1212R,215? The gain of the BF1212R,215 is typically 30 dB.
  10. At what frequency does the BF1212R,215 operate? The BF1212R,215 operates at a frequency of up to 400 MHz.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SOT-143R
Supplier Device Package:SOT-143R
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Same Series
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R
BF1212,215
BF1212,215
MOSFET N-CH DUAL GATE 6V SOT143B

Similar Products

Part Number BF1212R,215 BF1202R,215 BF1211R,215 BF1212,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30.5dB 29dB 30dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 0.9dB 0.9dB 0.9dB
Current - Test 12 mA 12 mA 15 mA 12 mA
Power - Output - 200mW - -
Voltage - Rated 6 V 10 V 6 V 6 V
Package / Case SOT-143R TO-253-4, TO-253AA SOT-143R TO-253-4, TO-253AA
Supplier Device Package SOT-143R SOT-143R SOT-143R SOT-143B

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