BF1212R,215
  • Share:

NXP USA Inc. BF1212R,215

Manufacturer No:
BF1212R,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT143R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc. This component is designed for high-performance applications in the RF domain, particularly in gain-controlled low noise VHF and UHF amplifiers. It is encapsulated in the SOT143R package, ensuring compact and efficient integration into various electronic systems.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VDS (Drain-Source Voltage)6V
ID (Drain Current)30mA
Ptot (Total Power Dissipation)180mW
Yfs (Forward Transfer Admittance)283343mS
Cig1-ss (Input Capacitance at Gate 1)1.72.2pF
Crss (Reverse Transfer Capacitance)f = 1 MHz1530fF
Fnoise (Noise Figure)f = 800 MHz1.11.8dB
Tj (Junction Temperature)150°C
Gain30dB
Frequency400MHz

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Excellent low frequency noise performance.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
  • Integrated diodes between gates and source protect against excessive input voltage surges.

Applications

The BF1212R,215 is primarily used in gain-controlled low noise VHF and UHF amplifiers. It is particularly suitable for applications in digital and analog television tuner systems, where low noise and high gain stability are crucial.

Q & A

  1. What is the BF1212R,215? The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc.
  2. What package type does the BF1212R,215 use? The BF1212R,215 is encapsulated in the SOT143R package.
  3. What is the maximum drain-source voltage of the BF1212R,215? The maximum drain-source voltage is 6V.
  4. What is the typical forward transfer admittance of the BF1212R,215? The typical forward transfer admittance is 33 mS.
  5. What is the noise figure of the BF1212R,215 at 800 MHz? The noise figure at 800 MHz is typically 1.8 dB.
  6. What are the primary applications of the BF1212R,215? The primary applications include gain-controlled low noise VHF and UHF amplifiers, especially in digital and analog television tuner systems.
  7. What is the maximum junction temperature of the BF1212R,215? The maximum junction temperature is 150°C.
  8. Does the BF1212R,215 have built-in protection against voltage surges? Yes, it has integrated diodes between gates and source to protect against excessive input voltage surges.
  9. What is the gain of the BF1212R,215? The gain of the BF1212R,215 is typically 30 dB.
  10. At what frequency does the BF1212R,215 operate? The BF1212R,215 operates at a frequency of up to 400 MHz.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SOT-143R
Supplier Device Package:SOT-143R
0 Remaining View Similar

In Stock

-
143

Please send RFQ , we will respond immediately.

Same Series
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R
BF1212,215
BF1212,215
MOSFET N-CH DUAL GATE 6V SOT143B

Similar Products

Part Number BF1212R,215 BF1202R,215 BF1211R,215 BF1212,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30.5dB 29dB 30dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 0.9dB 0.9dB 0.9dB
Current - Test 12 mA 12 mA 15 mA 12 mA
Power - Output - 200mW - -
Voltage - Rated 6 V 10 V 6 V 6 V
Package / Case SOT-143R TO-253-4, TO-253AA SOT-143R TO-253-4, TO-253AA
Supplier Device Package SOT-143R SOT-143R SOT-143R SOT-143B

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF7G22LS-200,118
BLF7G22LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC