BF1212R,215
  • Share:

NXP USA Inc. BF1212R,215

Manufacturer No:
BF1212R,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT143R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc. This component is designed for high-performance applications in the RF domain, particularly in gain-controlled low noise VHF and UHF amplifiers. It is encapsulated in the SOT143R package, ensuring compact and efficient integration into various electronic systems.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VDS (Drain-Source Voltage)6V
ID (Drain Current)30mA
Ptot (Total Power Dissipation)180mW
Yfs (Forward Transfer Admittance)283343mS
Cig1-ss (Input Capacitance at Gate 1)1.72.2pF
Crss (Reverse Transfer Capacitance)f = 1 MHz1530fF
Fnoise (Noise Figure)f = 800 MHz1.11.8dB
Tj (Junction Temperature)150°C
Gain30dB
Frequency400MHz

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Excellent low frequency noise performance.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
  • Integrated diodes between gates and source protect against excessive input voltage surges.

Applications

The BF1212R,215 is primarily used in gain-controlled low noise VHF and UHF amplifiers. It is particularly suitable for applications in digital and analog television tuner systems, where low noise and high gain stability are crucial.

Q & A

  1. What is the BF1212R,215? The BF1212R,215 is a dual-gate N-channel RF MOSFET transistor manufactured by NXP USA Inc.
  2. What package type does the BF1212R,215 use? The BF1212R,215 is encapsulated in the SOT143R package.
  3. What is the maximum drain-source voltage of the BF1212R,215? The maximum drain-source voltage is 6V.
  4. What is the typical forward transfer admittance of the BF1212R,215? The typical forward transfer admittance is 33 mS.
  5. What is the noise figure of the BF1212R,215 at 800 MHz? The noise figure at 800 MHz is typically 1.8 dB.
  6. What are the primary applications of the BF1212R,215? The primary applications include gain-controlled low noise VHF and UHF amplifiers, especially in digital and analog television tuner systems.
  7. What is the maximum junction temperature of the BF1212R,215? The maximum junction temperature is 150°C.
  8. Does the BF1212R,215 have built-in protection against voltage surges? Yes, it has integrated diodes between gates and source to protect against excessive input voltage surges.
  9. What is the gain of the BF1212R,215? The gain of the BF1212R,215 is typically 30 dB.
  10. At what frequency does the BF1212R,215 operate? The BF1212R,215 operates at a frequency of up to 400 MHz.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SOT-143R
Supplier Device Package:SOT-143R
0 Remaining View Similar

In Stock

-
143

Please send RFQ , we will respond immediately.

Same Series
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R
BF1212,215
BF1212,215
MOSFET N-CH DUAL GATE 6V SOT143B

Similar Products

Part Number BF1212R,215 BF1202R,215 BF1211R,215 BF1212,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30.5dB 29dB 30dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 0.9dB 0.9dB 0.9dB
Current - Test 12 mA 12 mA 15 mA 12 mA
Power - Output - 200mW - -
Voltage - Rated 6 V 10 V 6 V 6 V
Package / Case SOT-143R TO-253-4, TO-253AA SOT-143R TO-253-4, TO-253AA
Supplier Device Package SOT-143R SOT-143R SOT-143R SOT-143B

Related Product By Categories

BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
BF998,235
BF998,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
MCIMX6Q5EYM10ADR
MCIMX6Q5EYM10ADR
NXP USA Inc.
IC MPU I.MX6Q 1.0GHZ 624FCBGA
PCA8574TS,118
PCA8574TS,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 20SSOP
74AHC1G66GW-Q100125
74AHC1G66GW-Q100125
NXP USA Inc.
SPST
NX5P3001UKZ
NX5P3001UKZ
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 12WLCSP
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP