BLF8G22LS-140J
  • Share:

Ampleon USA Inc. BLF8G22LS-140J

Manufacturer No:
BLF8G22LS-140J
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18.5DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G22LS-140J is a 140 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 2000 MHz to 2200 MHz. This transistor is known for its high efficiency, excellent ruggedness, and low thermal resistance, making it suitable for high-performance RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range20002200MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-c W-CDMA140W
G ppower gainP L(AV) = 33 W; V DS = 28 V17.318.5dB
RL ininput return lossP L(AV) = 33 W; V DS = 28 V; I Dq = 900 mA-10-6dB
η Ddrain efficiencyP L(AV) = 33 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 900 mA2932.5%
ACPRadjacent channel power ratioP L(AV) = 33 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 900 mA-31-27dBc

Key Features

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance (Rth) providing excellent thermal stability
  • Designed for broadband operation (2000 MHz to 2200 MHz)
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 2000 MHz to 2200 MHz frequency range

Q & A

  1. What is the BLF8G22LS-140J used for? The BLF8G22LS-140J is used in RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
  2. What is the nominal output power of the BLF8G22LS-140J? The nominal output power at 3 dB gain compression is 140 W.
  3. What is the frequency range of the BLF8G22LS-140J? The frequency range is from 2000 MHz to 2200 MHz.
  4. What are the key features of the BLF8G22LS-140J? Key features include excellent ruggedness, high efficiency, low thermal resistance, and integrated ESD protection.
  5. Is the BLF8G22LS-140J RoHS compliant? Yes, it is compliant to the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
  6. What is the typical power gain of the BLF8G22LS-140J? The typical power gain is 18.5 dB.
  7. What is the drain efficiency of the BLF8G22LS-140J? The drain efficiency is typically 32.5%.
  8. Is the BLF8G22LS-140J internally matched? Yes, it is internally matched for ease of use.
  9. What type of protection does the BLF8G22LS-140J have? It has integrated ESD protection.
  10. What is the status of the BLF8G22LS-140J? The BLF8G22LS-140J has been discontinued.

Product Attributes

Transistor Type:LDMOS
Frequency:2.11GHz
Gain:18.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:900 mA
Power - Output:33W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$52.66
18

Please send RFQ , we will respond immediately.

Same Series
BLF8G22LS-140J
BLF8G22LS-140J
RF FET LDMOS 65V 18.5DB SOT502B

Similar Products

Part Number BLF8G22LS-140J BLF8G22LS-140U BLF8G22LS-240J
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS LDMOS
Frequency 2.11GHz 2.11GHz 2.11GHz ~ 2.17GHz
Gain 18.5dB 18.5dB 19dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 900 mA 900 mA 2 A
Power - Output 33W 33W 55W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B

Related Product By Categories

CGH40010F
CGH40010F
Wolfspeed, Inc.
RF MOSFET HEMT 28V 440166
AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
MRF300BN
MRF300BN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF7G27LS-140,112
BLF7G27LS-140,112
NXP USA Inc.
RF PFET, 1-ELEMENT, S BAND, SILI
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BF512,235
BF512,235
NXP USA Inc.
JFET N-CH 20V 30MA SOT23

Related Product By Brand

BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G22LS-200,112
BLF7G22LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B