BLF8G22LS-140J
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Ampleon USA Inc. BLF8G22LS-140J

Manufacturer No:
BLF8G22LS-140J
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18.5DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G22LS-140J is a 140 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 2000 MHz to 2200 MHz. This transistor is known for its high efficiency, excellent ruggedness, and low thermal resistance, making it suitable for high-performance RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range20002200MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-c W-CDMA140W
G ppower gainP L(AV) = 33 W; V DS = 28 V17.318.5dB
RL ininput return lossP L(AV) = 33 W; V DS = 28 V; I Dq = 900 mA-10-6dB
η Ddrain efficiencyP L(AV) = 33 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 900 mA2932.5%
ACPRadjacent channel power ratioP L(AV) = 33 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 900 mA-31-27dBc

Key Features

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance (Rth) providing excellent thermal stability
  • Designed for broadband operation (2000 MHz to 2200 MHz)
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 2000 MHz to 2200 MHz frequency range

Q & A

  1. What is the BLF8G22LS-140J used for? The BLF8G22LS-140J is used in RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
  2. What is the nominal output power of the BLF8G22LS-140J? The nominal output power at 3 dB gain compression is 140 W.
  3. What is the frequency range of the BLF8G22LS-140J? The frequency range is from 2000 MHz to 2200 MHz.
  4. What are the key features of the BLF8G22LS-140J? Key features include excellent ruggedness, high efficiency, low thermal resistance, and integrated ESD protection.
  5. Is the BLF8G22LS-140J RoHS compliant? Yes, it is compliant to the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
  6. What is the typical power gain of the BLF8G22LS-140J? The typical power gain is 18.5 dB.
  7. What is the drain efficiency of the BLF8G22LS-140J? The drain efficiency is typically 32.5%.
  8. Is the BLF8G22LS-140J internally matched? Yes, it is internally matched for ease of use.
  9. What type of protection does the BLF8G22LS-140J have? It has integrated ESD protection.
  10. What is the status of the BLF8G22LS-140J? The BLF8G22LS-140J has been discontinued.

Product Attributes

Transistor Type:LDMOS
Frequency:2.11GHz
Gain:18.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:900 mA
Power - Output:33W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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$52.66
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Same Series
BLF8G22LS-140U
BLF8G22LS-140U
RF FET LDMOS 65V 18.5DB SOT502B

Similar Products

Part Number BLF8G22LS-140J BLF8G22LS-140U BLF8G22LS-240J
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS LDMOS
Frequency 2.11GHz 2.11GHz 2.11GHz ~ 2.17GHz
Gain 18.5dB 18.5dB 19dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 900 mA 900 mA 2 A
Power - Output 33W 33W 55W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B

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