Overview
The BLF7G24LS-100,112 is a 100 W LDMOS power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in the frequency range of 2300 MHz to 2400 MHz. Although this product has been discontinued, it remains relevant for understanding high-performance RF power transistors. The transistor is known for its high efficiency, integrated ESD protection, and excellent ruggedness, making it suitable for base station applications and multicarrier systems.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| f range | - | 2300 | 2400 | - | MHz |
| P L(3dB) | - | - | 100 | - | W |
| G p | V DS = 28 V | 17.3 | 18 | - | dB |
| RL in | V DS = 28 V; I Dq = 900 mA | -14 | - | - | dB |
| η D | V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA | 22 | 27 | - | % |
| P L(AV) | - | - | 20 | - | W |
| ACPR 885k | P L(AV) = 20 W; V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA | -46 | -40 | - | dBc |
| Voltage - Test | - | - | 28 | - | V |
| Current Rating (Amps) | - | - | 0.9 | - | A |
| Package | - | - | SOT-502B | - | - |
Key Features
- High efficiency, contributing to reduced energy consumption in base stations.
- Integrated ESD protection for enhanced reliability.
- Low memory effects, providing excellent digital pre-distortion capability.
- Internally matched for ease of use.
- Excellent ruggedness and reliability.
- Low Rth, ensuring excellent thermal stability.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
Applications
- RF power amplifiers for base stations.
- Multicarrier applications in the 2300 MHz to 2400 MHz frequency range.
Q & A
- Q: What is the frequency range of the BLF7G24LS-100,112 transistor?
A: The frequency range is from 2300 MHz to 2400 MHz.
- Q: What is the nominal output power at 3 dB gain compression for this transistor?
A: The nominal output power at 3 dB gain compression is 100 W.
- Q: What is the power gain of the BLF7G24LS-100,112 transistor?
A: The power gain is approximately 17.3 dB to 18 dB at V DS = 28 V.
- Q: What is the drain efficiency of this transistor?
A: The drain efficiency is between 22% and 27% at V DS = 28 V and 2300 MHz ≤ f ≤ 2400 MHz.
- Q: What package type is used for the BLF7G24LS-100,112 transistor?
A: The transistor is packaged in SOT-502B.
- Q: Is the BLF7G24LS-100,112 transistor still in production?
A: No, this product has been discontinued.
- Q: What are the key benefits of using the BLF7G24LS-100,112 transistor in base stations?
A: Key benefits include high efficiency, integrated ESD protection, low memory effects, and excellent ruggedness.
- Q: How can I obtain the datasheet and other documentation for the BLF7G24LS-100,112 transistor?
A: You can download the datasheet and other documentation from the official Ampleon website or through authorized distributors like Ovaga Technologies.
- Q: What is the warranty period for the BLF7G24LS-100,112 transistor if purchased from Ovaga Technologies?
A: Ovaga Technologies offers a 1-year warranty on the BLF7G24LS-100,112 transistor.
- Q: How does Ovaga Technologies ensure the authenticity of the BLF7G24LS-100,112 transistor?
A: Ovaga Technologies rigorously tests and verifies the credentials of original Ampleon USA Inc. manufacturers and authorized agents to ensure authenticity.
