Overview
The BLF7G21LS-160P,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for RF power amplifier applications in base stations, operating within the frequency range of 1800 MHz to 2050 MHz, and also suitable for operation at 1495 MHz to 1511 MHz. Despite being discontinued, it remains a significant component in the realm of RF power amplification due to its robust features and performance characteristics.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | 1800 | 2050 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 160 | W | ||
| G p | power gain | P L(AV) = 45 W; V DS = 28 V; I Dq = 1080 mA | 17 | 18 | dB | |
| RL in | input return loss | P L(AV) = 45 W; V DS = 28 V; I Dq = 1080 mA | -15 | -8 | dB | |
| η D | drain efficiency | P L(AV) = 45 W; V DS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; I Dq = 1080 mA | 31 | 34 | % | |
| P L(AV) | average output power | 45 | W | |||
| ACPR 5M | adjacent channel power ratio (5 MHz) | P L(AV) = 45 W; V DS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; I Dq = 1080 mA | -30 | -25 | dBc | |
| V DS | drain-source voltage | 65 | V | |||
| I D | drain current | 32.5 | A |
Key Features
- Excellent Ruggedness: Designed to withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, contributing to reduced power consumption and heat generation.
- Low Rth: Provides excellent thermal stability due to its low thermal resistance.
- Broadband Operation: Suitable for operation across a wide frequency range from 1800 MHz to 2050 MHz.
- Lower Output Capacitance: Enhances performance in Doherty amplifier applications.
- Low Memory Effects: Ensures excellent pre-distortability, crucial for maintaining signal integrity.
- Internally Matched: Simplifies the design and implementation process.
- Integrated ESD Protection: Protects the device from electrostatic discharge.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for Base Stations: Ideal for use in base station amplifiers due to its high power handling and efficiency.
- Multi Carrier Applications: Suitable for multi-carrier operations within the 1800 MHz to 2050 MHz frequency range.
Q & A
- What is the frequency range of the BLF7G21LS-160P?
The BLF7G21LS-160P operates within the frequency range of 1800 MHz to 2050 MHz and is also suitable for operation at 1495 MHz to 1511 MHz.
- What is the nominal output power at 3 dB gain compression for the BLF7G21LS-160P?
The nominal output power at 3 dB gain compression is 160 W.
- What is the drain efficiency of the BLF7G21LS-160P?
The drain efficiency is between 31% and 34% under specified conditions.
- Is the BLF7G21LS-160P internally matched?
Yes, the BLF7G21LS-160P is internally matched for ease of use.
- Does the BLF7G21LS-160P have integrated ESD protection?
Yes, it has integrated ESD protection.
- What is the maximum drain-source voltage for the BLF7G21LS-160P?
The maximum drain-source voltage is 65 V.
- What is the maximum drain current for the BLF7G21LS-160P?
The maximum drain current is 32.5 A.
- Is the BLF7G21LS-160P RoHS compliant?
Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
- What are the typical applications of the BLF7G21LS-160P?
Typical applications include RF power amplifiers for base stations and multi-carrier applications in the specified frequency range.
- What is the current status of the BLF7G21LS-160P?
The BLF7G21LS-160P has been discontinued.
