Overview
The BLF8G22LS-160BVX is a 160 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This component is optimized for base station applications, particularly in the frequency range of 2000 MHz to 2200 MHz. It is known for its improved video bandwidth and is suitable for W-CDMA and multicarrier applications. Although the product has been discontinued, it remains relevant for understanding advanced LDMOS technology and its applications in RF power amplifiers.
Key Specifications
| Parameter | Conditions | Typical Value | Unit |
|---|---|---|---|
| Power Output | - | 55 W | - |
| Frequency Range | - | 2000 MHz to 2200 MHz | - |
| Gain | - | 18 dB | - |
| Drain-Source Voltage (Vds) | - | 65 V | V |
| Gate-Source Voltage (Vgs) | - | 13 V | V |
| Current Rating | - | 1.3 A | A |
| Thermal Resistance (Rth j-c) | Tcase = 80 C, PL = 55 W | 0.5 K/W | K/W |
| Package/Case | - | CDFM6 (SOT1120B) | - |
Key Features
- Excellent Ruggedness: The transistor is designed to withstand harsh operating conditions.
- High Efficiency: Optimized for high efficiency, reducing heat and improving overall performance.
- Low Thermal Resistance: Provides excellent thermal stability, ensuring reliable operation.
- Improved Video Bandwidth: Decoupling leads enable improved video bandwidth, typically up to 100 MHz.
- Lower Output Capacitance: Enhanced performance in Doherty applications due to lower output capacitance.
- Low Memory Effects: Designed for low memory effects, providing excellent pre-distortability.
- Internally Matched: Simplifies the design process by being internally matched for ease of use.
- Integrated ESD Protection: Built-in ESD protection to safeguard against electrostatic discharge.
- Integrated Current Sense: Allows for real-time current monitoring.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Optimized for use in W-CDMA base stations.
- Multicarrier Applications: Suitable for multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
Q & A
- What is the power output of the BLF8G22LS-160BVX?
The power output of the BLF8G22LS-160BVX is 55 W.
- What is the frequency range of the BLF8G22LS-160BVX?
The frequency range is from 2000 MHz to 2200 MHz.
- What is the gain of the BLF8G22LS-160BVX?
The gain is 18 dB.
- What is the maximum drain-source voltage (Vds) for the BLF8G22LS-160BVX?
The maximum Vds is 65 V.
- Is the BLF8G22LS-160BVX still in production?
No, the BLF8G22LS-160BVX has been discontinued. The recommended replacement is the BLC9G22LS-160VT.
- What package type does the BLF8G22LS-160BVX use?
The package type is CDFM6 (SOT1120B).
- Does the BLF8G22LS-160BVX have integrated ESD protection?
- What is the thermal resistance (Rth j-c) of the BLF8G22LS-160BVX?
The thermal resistance is typically 0.5 K/W at Tcase = 80 C and PL = 55 W.
- Is the BLF8G22LS-160BVX compliant with RoHS Directive 2002/95/EC?
- What are the typical applications of the BLF8G22LS-160BVX?
The typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
