Overview
The BLF7G20LS-200,118 is a 200 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 1805 MHz to 1990 MHz, making it suitable for W-CDMA and multicarrier systems. The device has been transferred from Ampleon to Flip Electronics.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 1805 | 1990 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 200 | W | ||
| G p | power gain | P L(AV) = 55 W; V DS = 28 V | 17 | 18 | dB | |
| RL in | input return loss | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | -10 | dB | ||
| η D | drain efficiency | P L(AV) = 55 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1620 mA | 30 | 33 | % | |
| P L(AV) | average output power | 55 | W | |||
| ACPR | adjacent channel power ratio | P L(AV) = 55 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1620 mA | -29 | dBc |
Key Features
- Designed for low memory effects providing excellent pre-distortability.
- Internally matched for ease of use.
- Excellent ruggedness.
- Integrated ESD protection.
- High efficiency.
- Designed for broadband operation (1805 MHz to 1990 MHz).
- Low Rth providing excellent thermal stability.
- Lower output capacitance for improved performance in Doherty applications.
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF power amplifiers for W-CDMA base stations.
- Multicarrier applications.
Q & A
- What is the frequency range of the BLF7G20LS-200 transistor?
The frequency range is from 1805 MHz to 1990 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 200 W.
- What is the power gain of the transistor?
The power gain is typically 18 dB under the conditions P L(AV) = 55 W and V DS = 28 V.
- What is the input return loss of the transistor?
The input return loss is typically -10 dB under the conditions P L(AV) = 55 W, V DS = 28 V, and I Dq = 1620 mA.
- What is the drain efficiency of the transistor?
The drain efficiency is typically 33% under the conditions P L(AV) = 55 W, V DS = 28 V, and 1805 MHz ≤ f ≤ 1880 MHz.
- What is the average output power of the transistor?
The average output power is 55 W.
- What is the adjacent channel power ratio (ACPR) of the transistor?
The ACPR is typically -29 dBc under the conditions P L(AV) = 55 W, V DS = 28 V, and 1805 MHz ≤ f ≤ 1880 MHz.
- Is the transistor compliant with RoHS Directive 2002/95/EC?
- What are the key applications of the BLF7G20LS-200 transistor?
The key applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- What is the package type of the BLF7G20LS-200 transistor?
The package type is SOT502B.
