AFT05MS031NR1
  • Share:

NXP USA Inc. AFT05MS031NR1

Manufacturer No:
AFT05MS031NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 40V 520MHZ TO-270-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MS031NR1 and AFT05MS031GNR1 are RF Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors produced by NXP USA Inc. These devices are designed for high-power RF applications, particularly in the frequency range of 136 to 520 MHz. They are well-suited for mobile two-way radio systems and other communication equipment requiring robust and efficient RF amplification.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -0.5, +40 Vdc
Gate-Source Voltage (VGS) -6.0, +12 Vdc
Operating Voltage (VDD) 17, +0 Vdc
Storage Temperature Range (Tstg) -65 to +150 °C
Case Operating Temperature Range (TC) -40 to +150 °C
Output Power (P1dB) 31 W
Gain (Gps) Up to 25.0 dB
Drain Efficiency (ηD) Up to 64.0%
Frequency Range 136 to 520 MHz
Package Type TO-270-2, TO-270-2G

Key Features

  • Characterized for operation from 136 to 520 MHz, making it versatile for various RF applications.
  • Unmatched input and output, allowing for wide frequency range utilization.
  • High gain and efficiency, with a gain of up to 25.0 dB and drain efficiency of up to 64.0%.
  • Rugged design with load mismatch/ruggedness testing showing no device degradation under severe conditions.
  • Wide operating temperature range from -40°C to +150°C.

Applications

The AFT05MS031NR1 and AFT05MS031GNR1 are primarily designed for mobile two-way radio applications, including but not limited to:

  • Base stations and repeaters.
  • Handheld and mobile radios.
  • Public safety and emergency communication systems.
  • Industrial and commercial radio communication equipment.

Q & A

  1. What is the frequency range of the AFT05MS031NR1?

    The AFT05MS031NR1 operates from 136 to 520 MHz.

  2. What is the maximum output power of the AFT05MS031NR1?

    The maximum output power is 31 watts.

  3. What are the key applications of the AFT05MS031NR1?

    It is primarily used in mobile two-way radio applications, including base stations, handheld and mobile radios, and public safety communication systems.

  4. What is the package type of the AFT05MS031NR1?

    The device is available in TO-270-2 and TO-270-2G packages.

  5. What are the operating voltage and current specifications?

    The operating voltage (VDD) is up to 17 Vdc, and the device is typically operated at 13.6 Vdc with a quiescent current (IDQ) of 100 mA.

  6. How robust is the AFT05MS031NR1 against load mismatch?

    The device has been tested for load mismatch/ruggedness and shows no degradation under severe conditions.

  7. What is the storage and operating temperature range of the AFT05MS031NR1?

    The storage temperature range is -65°C to +150°C, and the case operating temperature range is -40°C to +150°C.

  8. What are the key performance metrics of the AFT05MS031NR1?

    The device offers high gain (up to 25.0 dB) and high drain efficiency (up to 64.0%).

  9. Is the AFT05MS031NR1 suitable for high-frequency applications?

    Yes, it is characterized for operation up to 520 MHz, making it suitable for high-frequency RF applications.

  10. Are the AFT05MS031NR1 and AFT05MS031GNR1 RoHS compliant?

    Yes, these devices are lead-free and RoHS compliant for environmental safety.

Product Attributes

Transistor Type:LDMOS
Frequency:520MHz
Gain:17.7dB
Voltage - Test:13.6 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:10 mA
Power - Output:31W
Voltage - Rated:40 V
Package / Case:TO-270AA
Supplier Device Package:TO-270-2
0 Remaining View Similar

In Stock

$13.76
6

Please send RFQ , we will respond immediately.

Same Series
AFT05MS031GNR1
AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G

Similar Products

Part Number AFT05MS031NR1 AFT09MS031NR1 AFT05MS031GNR1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 520MHz 870MHz 520MHz
Gain 17.7dB 17.2dB 17.7dB
Voltage - Test 13.6 V 13.6 V 13.6 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 10 mA 500 mA 10 mA
Power - Output 31W 31W 31W
Voltage - Rated 40 V 40 V 40 V
Package / Case TO-270AA TO-270AA TO-270BA
Supplier Device Package TO-270-2 TO-270-2 TO-270-2 GULL

Related Product By Categories

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B

Related Product By Brand

PMBD914/DG215
PMBD914/DG215
NXP USA Inc.
PMBD914 - RECTIFIER DIODE
BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
P89LPC938FDH,529
P89LPC938FDH,529
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
74LVC1G04GW/DG125
74LVC1G04GW/DG125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX