Overview
The AFT05MS031NR1 and AFT05MS031GNR1 are RF Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors produced by NXP USA Inc. These devices are designed for high-power RF applications, particularly in the frequency range of 136 to 520 MHz. They are well-suited for mobile two-way radio systems and other communication equipment requiring robust and efficient RF amplification.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | -0.5, +40 | Vdc |
Gate-Source Voltage (VGS) | -6.0, +12 | Vdc |
Operating Voltage (VDD) | 17, +0 | Vdc |
Storage Temperature Range (Tstg) | -65 to +150 | °C |
Case Operating Temperature Range (TC) | -40 to +150 | °C |
Output Power (P1dB) | 31 | W |
Gain (Gps) | Up to 25.0 dB | |
Drain Efficiency (ηD) | Up to 64.0% | |
Frequency Range | 136 to 520 MHz | |
Package Type | TO-270-2, TO-270-2G |
Key Features
- Characterized for operation from 136 to 520 MHz, making it versatile for various RF applications.
- Unmatched input and output, allowing for wide frequency range utilization.
- High gain and efficiency, with a gain of up to 25.0 dB and drain efficiency of up to 64.0%.
- Rugged design with load mismatch/ruggedness testing showing no device degradation under severe conditions.
- Wide operating temperature range from -40°C to +150°C.
Applications
The AFT05MS031NR1 and AFT05MS031GNR1 are primarily designed for mobile two-way radio applications, including but not limited to:
- Base stations and repeaters.
- Handheld and mobile radios.
- Public safety and emergency communication systems.
- Industrial and commercial radio communication equipment.
Q & A
- What is the frequency range of the AFT05MS031NR1?
The AFT05MS031NR1 operates from 136 to 520 MHz.
- What is the maximum output power of the AFT05MS031NR1?
The maximum output power is 31 watts.
- What are the key applications of the AFT05MS031NR1?
It is primarily used in mobile two-way radio applications, including base stations, handheld and mobile radios, and public safety communication systems.
- What is the package type of the AFT05MS031NR1?
The device is available in TO-270-2 and TO-270-2G packages.
- What are the operating voltage and current specifications?
The operating voltage (VDD) is up to 17 Vdc, and the device is typically operated at 13.6 Vdc with a quiescent current (IDQ) of 100 mA.
- How robust is the AFT05MS031NR1 against load mismatch?
The device has been tested for load mismatch/ruggedness and shows no degradation under severe conditions.
- What is the storage and operating temperature range of the AFT05MS031NR1?
The storage temperature range is -65°C to +150°C, and the case operating temperature range is -40°C to +150°C.
- What are the key performance metrics of the AFT05MS031NR1?
The device offers high gain (up to 25.0 dB) and high drain efficiency (up to 64.0%).
- Is the AFT05MS031NR1 suitable for high-frequency applications?
Yes, it is characterized for operation up to 520 MHz, making it suitable for high-frequency RF applications.
- Are the AFT05MS031NR1 and AFT05MS031GNR1 RoHS compliant?
Yes, these devices are lead-free and RoHS compliant for environmental safety.