AFT05MS031NR1
  • Share:

NXP USA Inc. AFT05MS031NR1

Manufacturer No:
AFT05MS031NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 40V 520MHZ TO-270-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MS031NR1 and AFT05MS031GNR1 are RF Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors produced by NXP USA Inc. These devices are designed for high-power RF applications, particularly in the frequency range of 136 to 520 MHz. They are well-suited for mobile two-way radio systems and other communication equipment requiring robust and efficient RF amplification.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -0.5, +40 Vdc
Gate-Source Voltage (VGS) -6.0, +12 Vdc
Operating Voltage (VDD) 17, +0 Vdc
Storage Temperature Range (Tstg) -65 to +150 °C
Case Operating Temperature Range (TC) -40 to +150 °C
Output Power (P1dB) 31 W
Gain (Gps) Up to 25.0 dB
Drain Efficiency (ηD) Up to 64.0%
Frequency Range 136 to 520 MHz
Package Type TO-270-2, TO-270-2G

Key Features

  • Characterized for operation from 136 to 520 MHz, making it versatile for various RF applications.
  • Unmatched input and output, allowing for wide frequency range utilization.
  • High gain and efficiency, with a gain of up to 25.0 dB and drain efficiency of up to 64.0%.
  • Rugged design with load mismatch/ruggedness testing showing no device degradation under severe conditions.
  • Wide operating temperature range from -40°C to +150°C.

Applications

The AFT05MS031NR1 and AFT05MS031GNR1 are primarily designed for mobile two-way radio applications, including but not limited to:

  • Base stations and repeaters.
  • Handheld and mobile radios.
  • Public safety and emergency communication systems.
  • Industrial and commercial radio communication equipment.

Q & A

  1. What is the frequency range of the AFT05MS031NR1?

    The AFT05MS031NR1 operates from 136 to 520 MHz.

  2. What is the maximum output power of the AFT05MS031NR1?

    The maximum output power is 31 watts.

  3. What are the key applications of the AFT05MS031NR1?

    It is primarily used in mobile two-way radio applications, including base stations, handheld and mobile radios, and public safety communication systems.

  4. What is the package type of the AFT05MS031NR1?

    The device is available in TO-270-2 and TO-270-2G packages.

  5. What are the operating voltage and current specifications?

    The operating voltage (VDD) is up to 17 Vdc, and the device is typically operated at 13.6 Vdc with a quiescent current (IDQ) of 100 mA.

  6. How robust is the AFT05MS031NR1 against load mismatch?

    The device has been tested for load mismatch/ruggedness and shows no degradation under severe conditions.

  7. What is the storage and operating temperature range of the AFT05MS031NR1?

    The storage temperature range is -65°C to +150°C, and the case operating temperature range is -40°C to +150°C.

  8. What are the key performance metrics of the AFT05MS031NR1?

    The device offers high gain (up to 25.0 dB) and high drain efficiency (up to 64.0%).

  9. Is the AFT05MS031NR1 suitable for high-frequency applications?

    Yes, it is characterized for operation up to 520 MHz, making it suitable for high-frequency RF applications.

  10. Are the AFT05MS031NR1 and AFT05MS031GNR1 RoHS compliant?

    Yes, these devices are lead-free and RoHS compliant for environmental safety.

Product Attributes

Transistor Type:LDMOS
Frequency:520MHz
Gain:17.7dB
Voltage - Test:13.6 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:10 mA
Power - Output:31W
Voltage - Rated:40 V
Package / Case:TO-270AA
Supplier Device Package:TO-270-2
0 Remaining View Similar

In Stock

$13.76
6

Please send RFQ , we will respond immediately.

Same Series
AFT05MS031GNR1
AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G

Similar Products

Part Number AFT05MS031NR1 AFT09MS031NR1 AFT05MS031GNR1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 520MHz 870MHz 520MHz
Gain 17.7dB 17.2dB 17.7dB
Voltage - Test 13.6 V 13.6 V 13.6 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 10 mA 500 mA 10 mA
Power - Output 31W 31W 31W
Voltage - Rated 40 V 40 V 40 V
Package / Case TO-270AA TO-270AA TO-270BA
Supplier Device Package TO-270-2 TO-270-2 TO-270-2 GULL

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4

Related Product By Brand

BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP