AFT05MS031NR1
  • Share:

NXP USA Inc. AFT05MS031NR1

Manufacturer No:
AFT05MS031NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 40V 520MHZ TO-270-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MS031NR1 and AFT05MS031GNR1 are RF Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors produced by NXP USA Inc. These devices are designed for high-power RF applications, particularly in the frequency range of 136 to 520 MHz. They are well-suited for mobile two-way radio systems and other communication equipment requiring robust and efficient RF amplification.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -0.5, +40 Vdc
Gate-Source Voltage (VGS) -6.0, +12 Vdc
Operating Voltage (VDD) 17, +0 Vdc
Storage Temperature Range (Tstg) -65 to +150 °C
Case Operating Temperature Range (TC) -40 to +150 °C
Output Power (P1dB) 31 W
Gain (Gps) Up to 25.0 dB
Drain Efficiency (ηD) Up to 64.0%
Frequency Range 136 to 520 MHz
Package Type TO-270-2, TO-270-2G

Key Features

  • Characterized for operation from 136 to 520 MHz, making it versatile for various RF applications.
  • Unmatched input and output, allowing for wide frequency range utilization.
  • High gain and efficiency, with a gain of up to 25.0 dB and drain efficiency of up to 64.0%.
  • Rugged design with load mismatch/ruggedness testing showing no device degradation under severe conditions.
  • Wide operating temperature range from -40°C to +150°C.

Applications

The AFT05MS031NR1 and AFT05MS031GNR1 are primarily designed for mobile two-way radio applications, including but not limited to:

  • Base stations and repeaters.
  • Handheld and mobile radios.
  • Public safety and emergency communication systems.
  • Industrial and commercial radio communication equipment.

Q & A

  1. What is the frequency range of the AFT05MS031NR1?

    The AFT05MS031NR1 operates from 136 to 520 MHz.

  2. What is the maximum output power of the AFT05MS031NR1?

    The maximum output power is 31 watts.

  3. What are the key applications of the AFT05MS031NR1?

    It is primarily used in mobile two-way radio applications, including base stations, handheld and mobile radios, and public safety communication systems.

  4. What is the package type of the AFT05MS031NR1?

    The device is available in TO-270-2 and TO-270-2G packages.

  5. What are the operating voltage and current specifications?

    The operating voltage (VDD) is up to 17 Vdc, and the device is typically operated at 13.6 Vdc with a quiescent current (IDQ) of 100 mA.

  6. How robust is the AFT05MS031NR1 against load mismatch?

    The device has been tested for load mismatch/ruggedness and shows no degradation under severe conditions.

  7. What is the storage and operating temperature range of the AFT05MS031NR1?

    The storage temperature range is -65°C to +150°C, and the case operating temperature range is -40°C to +150°C.

  8. What are the key performance metrics of the AFT05MS031NR1?

    The device offers high gain (up to 25.0 dB) and high drain efficiency (up to 64.0%).

  9. Is the AFT05MS031NR1 suitable for high-frequency applications?

    Yes, it is characterized for operation up to 520 MHz, making it suitable for high-frequency RF applications.

  10. Are the AFT05MS031NR1 and AFT05MS031GNR1 RoHS compliant?

    Yes, these devices are lead-free and RoHS compliant for environmental safety.

Product Attributes

Transistor Type:LDMOS
Frequency:520MHz
Gain:17.7dB
Voltage - Test:13.6 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:10 mA
Power - Output:31W
Voltage - Rated:40 V
Package / Case:TO-270AA
Supplier Device Package:TO-270-2
0 Remaining View Similar

In Stock

$13.76
6

Please send RFQ , we will respond immediately.

Same Series
AFT05MS031GNR1
AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G

Similar Products

Part Number AFT05MS031NR1 AFT09MS031NR1 AFT05MS031GNR1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 520MHz 870MHz 520MHz
Gain 17.7dB 17.2dB 17.7dB
Voltage - Test 13.6 V 13.6 V 13.6 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 10 mA 500 mA 10 mA
Power - Output 31W 31W 31W
Voltage - Rated 40 V 40 V 40 V
Package / Case TO-270AA TO-270AA TO-270BA
Supplier Device Package TO-270-2 TO-270-2 TO-270-2 GULL

Related Product By Categories

MMRF1015NR1
MMRF1015NR1
NXP USA Inc.
FET RF 68V 960MHZ TO270
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
MRF101AN-START
MRF101AN-START
NXP USA Inc.
MRF101AN RF ESSENTIALS COMPONENT
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74AHC244PW-Q100118
74AHC244PW-Q100118
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX