AFT05MS031NR1
  • Share:

NXP USA Inc. AFT05MS031NR1

Manufacturer No:
AFT05MS031NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 40V 520MHZ TO-270-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MS031NR1 and AFT05MS031GNR1 are RF Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors produced by NXP USA Inc. These devices are designed for high-power RF applications, particularly in the frequency range of 136 to 520 MHz. They are well-suited for mobile two-way radio systems and other communication equipment requiring robust and efficient RF amplification.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -0.5, +40 Vdc
Gate-Source Voltage (VGS) -6.0, +12 Vdc
Operating Voltage (VDD) 17, +0 Vdc
Storage Temperature Range (Tstg) -65 to +150 °C
Case Operating Temperature Range (TC) -40 to +150 °C
Output Power (P1dB) 31 W
Gain (Gps) Up to 25.0 dB
Drain Efficiency (ηD) Up to 64.0%
Frequency Range 136 to 520 MHz
Package Type TO-270-2, TO-270-2G

Key Features

  • Characterized for operation from 136 to 520 MHz, making it versatile for various RF applications.
  • Unmatched input and output, allowing for wide frequency range utilization.
  • High gain and efficiency, with a gain of up to 25.0 dB and drain efficiency of up to 64.0%.
  • Rugged design with load mismatch/ruggedness testing showing no device degradation under severe conditions.
  • Wide operating temperature range from -40°C to +150°C.

Applications

The AFT05MS031NR1 and AFT05MS031GNR1 are primarily designed for mobile two-way radio applications, including but not limited to:

  • Base stations and repeaters.
  • Handheld and mobile radios.
  • Public safety and emergency communication systems.
  • Industrial and commercial radio communication equipment.

Q & A

  1. What is the frequency range of the AFT05MS031NR1?

    The AFT05MS031NR1 operates from 136 to 520 MHz.

  2. What is the maximum output power of the AFT05MS031NR1?

    The maximum output power is 31 watts.

  3. What are the key applications of the AFT05MS031NR1?

    It is primarily used in mobile two-way radio applications, including base stations, handheld and mobile radios, and public safety communication systems.

  4. What is the package type of the AFT05MS031NR1?

    The device is available in TO-270-2 and TO-270-2G packages.

  5. What are the operating voltage and current specifications?

    The operating voltage (VDD) is up to 17 Vdc, and the device is typically operated at 13.6 Vdc with a quiescent current (IDQ) of 100 mA.

  6. How robust is the AFT05MS031NR1 against load mismatch?

    The device has been tested for load mismatch/ruggedness and shows no degradation under severe conditions.

  7. What is the storage and operating temperature range of the AFT05MS031NR1?

    The storage temperature range is -65°C to +150°C, and the case operating temperature range is -40°C to +150°C.

  8. What are the key performance metrics of the AFT05MS031NR1?

    The device offers high gain (up to 25.0 dB) and high drain efficiency (up to 64.0%).

  9. Is the AFT05MS031NR1 suitable for high-frequency applications?

    Yes, it is characterized for operation up to 520 MHz, making it suitable for high-frequency RF applications.

  10. Are the AFT05MS031NR1 and AFT05MS031GNR1 RoHS compliant?

    Yes, these devices are lead-free and RoHS compliant for environmental safety.

Product Attributes

Transistor Type:LDMOS
Frequency:520MHz
Gain:17.7dB
Voltage - Test:13.6 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:10 mA
Power - Output:31W
Voltage - Rated:40 V
Package / Case:TO-270AA
Supplier Device Package:TO-270-2
0 Remaining View Similar

In Stock

$13.76
6

Please send RFQ , we will respond immediately.

Same Series
AFT05MS031GNR1
AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G

Similar Products

Part Number AFT05MS031NR1 AFT09MS031NR1 AFT05MS031GNR1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 520MHz 870MHz 520MHz
Gain 17.7dB 17.2dB 17.7dB
Voltage - Test 13.6 V 13.6 V 13.6 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 10 mA 500 mA 10 mA
Power - Output 31W 31W 31W
Voltage - Rated 40 V 40 V 40 V
Package / Case TO-270AA TO-270AA TO-270BA
Supplier Device Package TO-270-2 TO-270-2 TO-270-2 GULL

Related Product By Categories

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLA6H0912-500112
BLA6H0912-500112
NXP USA Inc.
BLA6H0912-500 - LDMOS AVIONICS R
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD84010-E
PD84010-E
STMicroelectronics
FET RF 40V 870MHZ
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
MRF6V2010NR1
MRF6V2010NR1
NXP USA Inc.
FET RF 110V 220MHZ TO270-2
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
MC33FS4500CAER2
MC33FS4500CAER2
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
PCF7922ATT/D1AC07J
PCF7922ATT/D1AC07J
NXP USA Inc.
RF TRANSMITTER 20TSSOP
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO