Overview
The BF1107,235 is a depletion type N-channel single gate MOSFET produced by NXP USA Inc. This component is packaged in a SOT23 package, which is a small, surface-mounted package suitable for various electronic applications. The BF1107 is designed to provide low loss and high isolation capabilities, making it ideal for RF switching functions. However, it is important to note that this product is currently obsolete and no longer manufactured.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Lins(on) - On-state insertion loss | VSG = VDG = 0 V; f = 50 MHz to 860 MHz; RS = RL = 50 Ω | - | - | 2.5 | dB |
| Lins(on) - On-state insertion loss | VSG = VDG = 0 V; f = 50 MHz to 860 MHz; RS = RL = 75 Ω | - | - | 3.5 | dB |
| ISLoff - Off-state isolation | VSG = VDG = 5 V; f = 50 MHz to 860 MHz; RS = RL = 50 Ω | 30 | - | - | dB |
| ISLoff - Off-state isolation | VSG = VDG = 5 V; f = 50 MHz to 860 MHz; RS = RL = 75 Ω | 30 | - | - | dB |
| RDSon - Drain-source on-state resistance | VGS = 0 V; ID = 1 mA | - | 12 | 20 | Ω |
| VGS(p) - Gate-source pinch-off voltage | VDS = 1 V; ID = 20 µA | -3 | - | -4.5 | V |
Key Features
- Depletion type N-channel single gate MOSFET
- SOT23 package for surface mounting
- Low loss and high isolation capabilities
- Integrated diodes between gate and source, and between gate and drain for protection against excessive input voltage surges
- Drain and source are interchangeable
- Currentless RF switch
Applications
- Various RF switching applications
- Passive loop through for VCR tuners
- Transceiver switching
Q & A
- What is the BF1107,235?
The BF1107,235 is a depletion type N-channel single gate MOSFET produced by NXP USA Inc., packaged in a SOT23 package.
- What are the key applications of the BF1107,235?
The BF1107,235 is used in various RF switching applications, including passive loop through for VCR tuners and transceiver switching.
- What are the on-state insertion loss and off-state isolation specifications of the BF1107,235?
The on-state insertion loss is up to 2.5 dB for RS = RL = 50 Ω and up to 3.5 dB for RS = RL = 75 Ω. The off-state isolation is 30 dB for both RS = RL = 50 Ω and RS = RL = 75 Ω.
- What is the drain-source on-state resistance of the BF1107,235?
The drain-source on-state resistance (RDSon) is typically 12 Ω and can be up to 20 Ω at VGS = 0 V and ID = 1 mA.
- Is the BF1107,235 still in production?
No, the BF1107,235 is currently obsolete and no longer manufactured.
- What package type does the BF1107,235 use?
The BF1107,235 is packaged in a SOT23 package, which is a surface-mounted package.
- What are the integrated protection features of the BF1107,235?
The BF1107,235 has integrated diodes between the gate and source and between the gate and drain to protect against excessive input voltage surges.
- Are the drain and source of the BF1107,235 interchangeable?
- What is the gate-source pinch-off voltage of the BF1107,235?
The gate-source pinch-off voltage (VGS(p)) is typically between -3 V and -4.5 V at VDS = 1 V and ID = 20 µA.
- How should the BF1107,235 be handled to avoid damage?
The BF1107,235 is sensitive to ElectroStatic Discharge (ESD), so care should be taken during transport and handling.
