MW7IC2425NBR1
  • Share:

NXP USA Inc. MW7IC2425NBR1

Manufacturer No:
MW7IC2425NBR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 65V 2.45GHZ TO-272-16
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MW7IC2425NBR1 is a high-performance RF power field-effect transistor (FET) manufactured by NXP USA Inc. This device is specifically designed for S Band applications, which include frequencies ranging from 2 to 4 GHz. The MW7IC2425NBR1 is built using silicon N-channel MOSFET technology, making it suitable for high-frequency and high-power applications such as satellite communications, radar systems, and other wireless communication systems.

Key Specifications

Parameter Value Unit
Part Number MW7IC2425NBR1
Manufacturer NXP USA Inc.
Description RF POWER FIELD-EFFECT TRANSISTOR
Package / Case TO-272-16 Variant, Flat Leads
Frequency 2.45 GHz
Gain 27.7 dB
Power - Output 25 W
Transistor Type LDMOS
Voltage - Test 28 V
Current - Test 55 mA
Voltage - Rated 65 V
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual
Height 2.64 mm
Length 23.67 mm
Moisture Sensitive Yes
Pd - Power Dissipation 25 W
Vgs - Gate-Source Voltage 10 V
Threshold Voltage 1.9 V

Key Features

  • Silicon-based N-channel MOSFET: Suitable for high-frequency applications, the MW7IC2425NBR1 leverages silicon technology to ensure reliable performance.
  • TO-272-16 Variant Package: This package features flat leads, providing mechanical stability and ease of integration into various electronic circuits.
  • S Band Operation: Designed specifically for the S Band, which covers frequencies from 2 to 4 GHz, making it ideal for amplifying RF signals in communication systems.
  • High Power Output: With an output power of 25 W and a gain of 27.7 dB, this transistor is capable of handling high-power requirements.
  • Wide Operating Temperature Range: The device can operate within a temperature range of -65 °C to +150 °C, ensuring robust performance under various conditions.
  • Enhancement Mode: The transistor operates in enhancement mode, which is beneficial for applications requiring low power consumption and high efficiency.

Applications

The MW7IC2425NBR1 is designed for use in several high-frequency and high-power applications, including:

  • Satellite Communications: Due to its high power output and frequency handling capabilities, it is well-suited for satellite communication systems.
  • Radar Systems: The transistor's performance in the S Band makes it an ideal choice for radar systems that require precise frequency operation.
  • Industrial, Medical, and Scientific Applications: It is also suitable for various industrial, medical, and scientific applications where high-frequency power handling is essential.
  • Wireless Communication Systems: The MW7IC2425NBR1 can be used in other wireless communication systems that require high power and frequency stability.

Q & A

  1. Q: What is the MW7IC2425NBR1?

    A: The MW7IC2425NBR1 is a high-performance RF power field-effect transistor designed for S Band applications, manufactured by NXP USA Inc.

  2. Q: What is the operating frequency of the MW7IC2425NBR1?

    A: The operating frequency of the MW7IC2425NBR1 is 2.45 GHz.

  3. Q: What is the output power of the MW7IC2425NBR1?

    A: The output power of the MW7IC2425NBR1 is 25 W.

  4. Q: What is the gain of the MW7IC2425NBR1?

    A: The gain of the MW7IC2425NBR1 is 27.7 dB.

  5. Q: What is the package type of the MW7IC2425NBR1?

    A: The package type of the MW7IC2425NBR1 is TO-272-16 Variant with flat leads.

  6. Q: What is the operating temperature range of the MW7IC2425NBR1?

    A: The operating temperature range of the MW7IC2425NBR1 is from -65 °C to +150 °C.

  7. Q: What are the typical applications of the MW7IC2425NBR1?

    A: The MW7IC2425NBR1 is typically used in satellite communications, radar systems, and other wireless communication systems that require high power and frequency stability.

  8. Q: Is the MW7IC2425NBR1 RoHS compliant?

    A: Yes, the MW7IC2425NBR1 is RoHS compliant and lead-free.

  9. Q: What is the warranty period for the MW7IC2425NBR1?

    A: The warranty period for the MW7IC2425NBR1 is typically 1 year, covering any defects in materials and workmanship under normal use.

  10. Q: How can I ensure the authenticity of the MW7IC2425NBR1?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original NXP USA Inc. manufacturers and suppliers.

Product Attributes

Transistor Type:LDMOS
Frequency:2.45GHz
Gain:27.7dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:55 mA
Power - Output:25W
Voltage - Rated:65 V
Package / Case:TO-272-16 Variant, Flat Leads
Supplier Device Package:TO-272 WB-16
0 Remaining View Similar

In Stock

-
601

Please send RFQ , we will respond immediately.

Same Series
MW7IC2425GNR1
MW7IC2425GNR1
RF S BAND, N-CHANNEL
MW7IC2425NR1
MW7IC2425NR1
IC AMP ISM 2.45GHZ TO270 WBL-16

Related Product By Categories

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
NE5550979A-A
NE5550979A-A
CEL
FET RF 30V 900MHZ 79A-PKG
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX