MW7IC2425NBR1
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NXP USA Inc. MW7IC2425NBR1

Manufacturer No:
MW7IC2425NBR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 65V 2.45GHZ TO-272-16
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MW7IC2425NBR1 is a high-performance RF power field-effect transistor (FET) manufactured by NXP USA Inc. This device is specifically designed for S Band applications, which include frequencies ranging from 2 to 4 GHz. The MW7IC2425NBR1 is built using silicon N-channel MOSFET technology, making it suitable for high-frequency and high-power applications such as satellite communications, radar systems, and other wireless communication systems.

Key Specifications

Parameter Value Unit
Part Number MW7IC2425NBR1
Manufacturer NXP USA Inc.
Description RF POWER FIELD-EFFECT TRANSISTOR
Package / Case TO-272-16 Variant, Flat Leads
Frequency 2.45 GHz
Gain 27.7 dB
Power - Output 25 W
Transistor Type LDMOS
Voltage - Test 28 V
Current - Test 55 mA
Voltage - Rated 65 V
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual
Height 2.64 mm
Length 23.67 mm
Moisture Sensitive Yes
Pd - Power Dissipation 25 W
Vgs - Gate-Source Voltage 10 V
Threshold Voltage 1.9 V

Key Features

  • Silicon-based N-channel MOSFET: Suitable for high-frequency applications, the MW7IC2425NBR1 leverages silicon technology to ensure reliable performance.
  • TO-272-16 Variant Package: This package features flat leads, providing mechanical stability and ease of integration into various electronic circuits.
  • S Band Operation: Designed specifically for the S Band, which covers frequencies from 2 to 4 GHz, making it ideal for amplifying RF signals in communication systems.
  • High Power Output: With an output power of 25 W and a gain of 27.7 dB, this transistor is capable of handling high-power requirements.
  • Wide Operating Temperature Range: The device can operate within a temperature range of -65 °C to +150 °C, ensuring robust performance under various conditions.
  • Enhancement Mode: The transistor operates in enhancement mode, which is beneficial for applications requiring low power consumption and high efficiency.

Applications

The MW7IC2425NBR1 is designed for use in several high-frequency and high-power applications, including:

  • Satellite Communications: Due to its high power output and frequency handling capabilities, it is well-suited for satellite communication systems.
  • Radar Systems: The transistor's performance in the S Band makes it an ideal choice for radar systems that require precise frequency operation.
  • Industrial, Medical, and Scientific Applications: It is also suitable for various industrial, medical, and scientific applications where high-frequency power handling is essential.
  • Wireless Communication Systems: The MW7IC2425NBR1 can be used in other wireless communication systems that require high power and frequency stability.

Q & A

  1. Q: What is the MW7IC2425NBR1?

    A: The MW7IC2425NBR1 is a high-performance RF power field-effect transistor designed for S Band applications, manufactured by NXP USA Inc.

  2. Q: What is the operating frequency of the MW7IC2425NBR1?

    A: The operating frequency of the MW7IC2425NBR1 is 2.45 GHz.

  3. Q: What is the output power of the MW7IC2425NBR1?

    A: The output power of the MW7IC2425NBR1 is 25 W.

  4. Q: What is the gain of the MW7IC2425NBR1?

    A: The gain of the MW7IC2425NBR1 is 27.7 dB.

  5. Q: What is the package type of the MW7IC2425NBR1?

    A: The package type of the MW7IC2425NBR1 is TO-272-16 Variant with flat leads.

  6. Q: What is the operating temperature range of the MW7IC2425NBR1?

    A: The operating temperature range of the MW7IC2425NBR1 is from -65 °C to +150 °C.

  7. Q: What are the typical applications of the MW7IC2425NBR1?

    A: The MW7IC2425NBR1 is typically used in satellite communications, radar systems, and other wireless communication systems that require high power and frequency stability.

  8. Q: Is the MW7IC2425NBR1 RoHS compliant?

    A: Yes, the MW7IC2425NBR1 is RoHS compliant and lead-free.

  9. Q: What is the warranty period for the MW7IC2425NBR1?

    A: The warranty period for the MW7IC2425NBR1 is typically 1 year, covering any defects in materials and workmanship under normal use.

  10. Q: How can I ensure the authenticity of the MW7IC2425NBR1?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original NXP USA Inc. manufacturers and suppliers.

Product Attributes

Transistor Type:LDMOS
Frequency:2.45GHz
Gain:27.7dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:55 mA
Power - Output:25W
Voltage - Rated:65 V
Package / Case:TO-272-16 Variant, Flat Leads
Supplier Device Package:TO-272 WB-16
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