Overview
The PD57006STR-E is a high-performance RF power transistor produced by STMicroelectronics. It belongs to the LDMOS (Lateral Double-Diffused MOSFET) family and is designed for high-gain, broad-band commercial and industrial applications. This N-channel, enhancement-mode lateral field-effect RF power transistor operates in common source configuration and is particularly suited for frequencies up to 1 GHz.
The device is packaged in the innovative PowerSO-10RF package, which is the first ST JEDEC-approved, high-power SMD package. This package offers excellent thermal stability, high reliability, and ease of assembly, making it ideal for applications requiring superior RF performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (V(BR)DSS) | 65 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (ID) | 1 | A |
| Power dissipation (PDISS) @ TC = 70°C | 20 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction-case thermal resistance (RthJC) | 5 | °C/W |
| Output power (POUT) @ 945 MHz / 28 V | 6 W with 15 dB gain |
Key Features
- Excellent thermal stability and reliability.
- Common source configuration.
- High gain and broad-band performance up to 1 GHz.
- Superior linearity performance, making it ideal for car mobile radio applications.
- PowerSO-10RF package, the first ST JEDEC-approved, high-power SMD package, optimized for RF needs and ease of assembly.
- High reliability and environmental compliance with ECOPACK® specifications.
Applications
- Commercial and industrial RF applications.
- Car mobile radio systems.
- Broad-band amplifiers.
- High-power RF amplifiers requiring high gain and linearity.
Q & A
- What is the PD57006STR-E?
The PD57006STR-E is a high-performance RF power transistor from STMicroelectronics, designed for high-gain, broad-band commercial and industrial applications.
- What package type does the PD57006STR-E use?
The device is packaged in the PowerSO-10RF package, which is the first ST JEDEC-approved, high-power SMD package.
- What are the maximum ratings for the PD57006STR-E?
The maximum ratings include a drain-source voltage of 65 V, gate-source voltage of ±20 V, and a maximum operating junction temperature of 165°C.
- What is the typical output power of the PD57006STR-E?
The device can deliver an output power of 6 W with 15 dB gain at 945 MHz and 28 V.
- What are the key features of the PD57006STR-E?
Key features include excellent thermal stability, high gain and broad-band performance, superior linearity, and high reliability.
- What applications is the PD57006STR-E suited for?
The device is suited for commercial and industrial RF applications, car mobile radio systems, and high-power RF amplifiers requiring high gain and linearity.
- What is the junction-case thermal resistance of the PD57006STR-E?
The junction-case thermal resistance (RthJC) is 5 °C/W.
- Is the PD57006STR-E environmentally compliant?
Yes, the device is available in ECOPACK® packages, which comply with environmental standards.
- What is the storage temperature range for the PD57006STR-E?
The storage temperature range is -65 to +150 °C.
- How does the PowerSO-10RF package benefit the PD57006STR-E?
The PowerSO-10RF package offers excellent RF performance, high reliability, and ease of assembly.
