Overview
The PD57006-E is a high-performance RF power transistor manufactured by STMicroelectronics. This device is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) designed for high gain and broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz, making it an ideal solution for various RF applications, including car mobile radio.
The transistor is packaged in the PowerSO-10RF exposed bottom pad, which is the first ST JEDEC approved, high power SMD package. This package offers high reliability, excellent RF performance, and ease of assembly.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Manufacturer | STMicroelectronics | |
Transistor Type | LDMOS | |
Frequency | 945 MHz | |
Gain | 15 dB | |
Voltage - Rated | 65 V | |
Current Rating | 1 A | |
Power - Output | 6 W | |
Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | |
Max. Operating Junction Temperature | 165 °C | |
Storage Temperature | -65 to +150 °C | |
Junction - Case Thermal Resistance | 5 °C/W |
Key Features
- Excellent Thermal Stability: The PD57006-E boasts excellent thermal stability, ensuring reliable performance under various operating conditions.
- High Gain and Linearity: The device offers high gain and linearity, making it suitable for applications requiring high RF performance.
- Common Source Configuration: Operates in common source configuration, which is beneficial for many RF applications.
- PowerSO-10RF Package: Packaged in the PowerSO-10RF exposed bottom pad, which is designed for high reliability and ease of assembly.
- Broad Band Capability: Designed for broad band commercial and industrial applications, operating up to 1 GHz.
Applications
- Car Mobile Radio: The superior linearity performance of the PD57006-E makes it an ideal solution for car mobile radio applications.
- Commercial and Industrial RF Applications: Suitable for various high-gain and broad band RF applications in commercial and industrial sectors.
- MOSFET Drivers: Can be used in MOSFET driver applications due to its high performance and reliability.
Q & A
- What is the maximum operating frequency of the PD57006-E?
The PD57006-E operates at frequencies up to 1 GHz.
- What is the rated voltage of the PD57006-E?
The rated voltage of the PD57006-E is 65 V.
- What is the output power of the PD57006-E at 945 MHz?
The output power of the PD57006-E at 945 MHz is 6 W with a gain of 15 dB.
- What package type is used for the PD57006-E?
The PD57006-E is packaged in the PowerSO-10RF exposed bottom pad.
- What are the key applications of the PD57006-E?
The PD57006-E is suitable for car mobile radio, commercial and industrial RF applications, and MOSFET driver applications.
- What is the maximum junction temperature of the PD57006-E?
The maximum junction temperature of the PD57006-E is 165 °C.
- What is the thermal resistance of the PD57006-E?
The junction-case thermal resistance of the PD57006-E is 5 °C/W.
- Is the PD57006-E RoHS compliant?
Yes, the PD57006-E is RoHS compliant.
- What is the storage temperature range for the PD57006-E?
The storage temperature range for the PD57006-E is -65 to +150 °C.
- What are the benefits of the PowerSO-10RF package used in the PD57006-E?
The PowerSO-10RF package offers high reliability, excellent RF performance, and ease of assembly.