PD57006S-E
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STMicroelectronics PD57006S-E

Manufacturer No:
PD57006S-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 65V 945MHZ PWRSO-10
Delivery:
Payment:
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Product Introduction

Overview

The PD57006-E is a high-performance RF power transistor manufactured by STMicroelectronics. This device is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) designed for high gain and broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz, making it an ideal solution for various RF applications, including car mobile radio.

The transistor is packaged in the PowerSO-10RF exposed bottom pad, which is the first ST JEDEC approved, high power SMD package. This package offers high reliability, excellent RF performance, and ease of assembly.

Key Specifications

Parameter Value Unit
Manufacturer STMicroelectronics
Transistor Type LDMOS
Frequency 945 MHz
Gain 15 dB
Voltage - Rated 65 V
Current Rating 1 A
Power - Output 6 W
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Max. Operating Junction Temperature 165 °C
Storage Temperature -65 to +150 °C
Junction - Case Thermal Resistance 5 °C/W

Key Features

  • Excellent Thermal Stability: The PD57006-E boasts excellent thermal stability, ensuring reliable performance under various operating conditions.
  • High Gain and Linearity: The device offers high gain and linearity, making it suitable for applications requiring high RF performance.
  • Common Source Configuration: Operates in common source configuration, which is beneficial for many RF applications.
  • PowerSO-10RF Package: Packaged in the PowerSO-10RF exposed bottom pad, which is designed for high reliability and ease of assembly.
  • Broad Band Capability: Designed for broad band commercial and industrial applications, operating up to 1 GHz.

Applications

  • Car Mobile Radio: The superior linearity performance of the PD57006-E makes it an ideal solution for car mobile radio applications.
  • Commercial and Industrial RF Applications: Suitable for various high-gain and broad band RF applications in commercial and industrial sectors.
  • MOSFET Drivers: Can be used in MOSFET driver applications due to its high performance and reliability.

Q & A

  1. What is the maximum operating frequency of the PD57006-E?

    The PD57006-E operates at frequencies up to 1 GHz.

  2. What is the rated voltage of the PD57006-E?

    The rated voltage of the PD57006-E is 65 V.

  3. What is the output power of the PD57006-E at 945 MHz?

    The output power of the PD57006-E at 945 MHz is 6 W with a gain of 15 dB.

  4. What package type is used for the PD57006-E?

    The PD57006-E is packaged in the PowerSO-10RF exposed bottom pad.

  5. What are the key applications of the PD57006-E?

    The PD57006-E is suitable for car mobile radio, commercial and industrial RF applications, and MOSFET driver applications.

  6. What is the maximum junction temperature of the PD57006-E?

    The maximum junction temperature of the PD57006-E is 165 °C.

  7. What is the thermal resistance of the PD57006-E?

    The junction-case thermal resistance of the PD57006-E is 5 °C/W.

  8. Is the PD57006-E RoHS compliant?

    Yes, the PD57006-E is RoHS compliant.

  9. What is the storage temperature range for the PD57006-E?

    The storage temperature range for the PD57006-E is -65 to +150 °C.

  10. What are the benefits of the PowerSO-10RF package used in the PD57006-E?

    The PowerSO-10RF package offers high reliability, excellent RF performance, and ease of assembly.

Product Attributes

Transistor Type:LDMOS
Frequency:945MHz
Gain:15dB
Voltage - Test:28 V
Current Rating (Amps):1A
Noise Figure:- 
Current - Test:70 mA
Power - Output:6W
Voltage - Rated:65 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:PowerSO-10RF (Straight Lead)
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Same Series
PD57006STR-E
PD57006STR-E
TRANS RF N-CH FET POWERSO-10RF
PD57006S-E
PD57006S-E
FET RF 65V 945MHZ PWRSO-10
PD57006TR-E
PD57006TR-E
TRANSISTOR RF POWERSO-10

Similar Products

Part Number PD57006S-E PD57002S-E PD57006-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 945MHz 960MHz 945MHz
Gain 15dB 15dB 15dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 1A 250mA 1A
Noise Figure - - -
Current - Test 70 mA 10 mA 70 mA
Power - Output 6W 2W 6W
Voltage - Rated 65 V 65 V 65 V
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package PowerSO-10RF (Straight Lead) PowerSO-10RF (Straight Lead) PowerSO-10RF (Formed Lead)

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