Overview
The PD57006-E is a high-performance RF power transistor manufactured by STMicroelectronics. It is part of the LDMOS (Lateral Double-Diffused MOSFET) family, designed for high gain and broad band commercial and industrial applications. This N-channel, enhancement-mode lateral field-effect RF power transistor operates in a common source configuration and is known for its excellent thermal stability and linearity performance.
The device is packaged in the PowerSO-10RF exposed bottom pad package, which is the first true SMD (Surface Mount Device) plastic RF power package approved by ST and JEDEC. This package offers high reliability, excellent RF performance, and ease of assembly.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | LDMOS | - |
| Frequency | 945 MHz | - |
| Gain | 15 dB | - |
| Voltage - Rated | 65 V | - |
| Current Rating | 1 A | - |
| Power - Output | 6 W | - |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | - |
| Drain-source voltage (V(BR)DSS) | 65 V | - |
| Gate-source voltage (VGS) | ± 20 V | - |
| Max. operating junction temperature (TJ) | 165 °C | - |
| Storage temperature (TSTG) | -65 to +150 °C | - |
| Junction - case thermal resistance (RthJC) | 5 °C/W | - |
Key Features
- Excellent Thermal Stability: The PD57006-E boasts excellent thermal stability, ensuring reliable performance under various operating conditions.
- High Gain and Linearity: The device offers high gain (15 dB at 945 MHz) and superior linearity performance, making it ideal for applications requiring high fidelity.
- Common Source Configuration: Operates in a common source configuration, suitable for a wide range of RF applications.
- PowerSO-10RF Package: Packaged in the PowerSO-10RF exposed bottom pad package, which is the first true SMD plastic RF power package approved by ST and JEDEC, offering high reliability and ease of assembly.
- Broad Band Capability: Designed for broad band commercial and industrial applications, operating at frequencies up to 1 GHz.
Applications
- Car Mobile Radio: The superior linearity performance of the PD57006-E makes it an ideal solution for car mobile radio applications.
- Commercial and Industrial RF Systems: Suitable for various commercial and industrial RF systems requiring high gain and broad band capabilities.
- High-Power RF Amplifiers: Used in high-power RF amplifiers due to its ability to handle high output power (6 W) and operate at high frequencies.
Q & A
- What is the maximum drain-source voltage of the PD57006-E?
The maximum drain-source voltage (V(BR)DSS) is 65 V.
- What is the typical gain of the PD57006-E at 945 MHz?
The typical gain at 945 MHz is 15 dB.
- What package type is used for the PD57006-E?
The device is packaged in the PowerSO-10RF exposed bottom pad package.
- What is the maximum operating junction temperature of the PD57006-E?
The maximum operating junction temperature (TJ) is 165 °C.
- What are the storage temperature limits for the PD57006-E?
The storage temperature (TSTG) range is -65 to +150 °C.
- What is the junction-case thermal resistance of the PD57006-E?
The junction-case thermal resistance (RthJC) is 5 °C/W.
- What are the typical applications of the PD57006-E?
Typical applications include car mobile radio, commercial and industrial RF systems, and high-power RF amplifiers.
- What is the maximum output power of the PD57006-E?
The maximum output power (POUT) is 6 W.
- What is the current rating of the PD57006-E?
The current rating is 1 A.
- Is the PD57006-E RoHS compliant?
Yes, the PD57006-E is RoHS compliant.
