MRF101AN
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NXP USA Inc. MRF101AN

Manufacturer No:
MRF101AN
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
RF TRANSISTOR 100W TO-220
Delivery:
Payment:
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Product Introduction

Overview

The MRF101AN is a wideband RF power LDMOS transistor produced by NXP USA Inc. This device is designed for high-performance applications across various frequency ranges, particularly in the VHF and UHF spectrum. It is known for its exceptional ruggedness and high efficiency, making it suitable for a broad range of uses including communications, broadcast, industrial, scientific, medical, and aerospace applications.

Key Specifications

ParameterValueUnit
Part NumberMRF101AN
ManufacturerNXP
Frequency Min1.8 GHz
Frequency Max250 MHz
Output Power100 W
Gain23 dB
Typical Efficiency79.5%
Supply Voltage50 V
PackageTO-220-3L
ProcessLDMOS
TypeRF Power Discrete Transistors
Drain-Source Voltage-0.5, +133 Vdc
Gate-Source Voltage-6.0, +10 Vdc
Operating Voltage50 Vdc
Storage Temperature Range-65 to +150 °C
Case Operating Temperature Range-40 to +150 °C

Key Features

  • Mirror pinout versions (A and B) to simplify use in push-pull, two-up configurations.
  • Bolt-down package for excellent thermal performance.
  • Flexible operating voltage characterized from 30 to 50 V.
  • Compact reference designs available for various applications.
  • High power gain and drain efficiency, with a typical gain of 23 dB and efficiency of 79.5%.

Applications

  • VHF/UHF communications.
  • VHF TV broadcast.
  • Aerospace applications.
  • Industrial, scientific, and medical (ISM) applications.
  • Industrial heating, welding, and drying systems.
  • Switch mode power supplies.

Q & A

  1. What is the MRF101AN transistor used for? The MRF101AN is used in VHF/UHF communications, VHF TV broadcast, aerospace, industrial, scientific, and medical applications.
  2. What is the frequency range of the MRF101AN? The frequency range is from 1.8 MHz to 250 MHz.
  3. What is the output power of the MRF101AN? The output power is 100 W.
  4. What is the typical efficiency of the MRF101AN? The typical efficiency is 79.5%).
  5. What package type does the MRF101AN use? The MRF101AN uses a TO-220-3L package).
  6. What are the key features of the MRF101AN? Key features include mirror pinout versions, bolt-down package, flexible operating voltage, and high power gain and drain efficiency).
  7. How can I order the MRF101AN? You can order the MRF101AN through various distributors such as RFMW, NXP's official website, or other authorized suppliers).
  8. What is the warranty period for the MRF101AN? The warranty period can vary depending on the supplier, but some suppliers offer a 1-year warranty).
  9. How does one ensure the authenticity of the MRF101AN from NXP USA Inc.? Authenticity is ensured through rigorous testing and verification of suppliers by the distributors).
  10. Where can I find detailed information about the MRF101AN? Detailed information can be found in the datasheet available on NXP's official website or through authorized distributors).

Product Attributes

Transistor Type:LDMOS
Frequency:1.8MHz ~ 250MHz
Gain:21.1dB
Voltage - Test:50 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:100 mA
Power - Output:115W
Voltage - Rated:133 V
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Similar Products

Part Number MRF101AN MRF101BN
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 1.8MHz ~ 250MHz 1.8MHz ~ 250MHz
Gain 21.1dB 21.1dB
Voltage - Test 50 V 50 V
Current Rating (Amps) 10µA 10µA
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 115W 115W
Voltage - Rated 133 V 133 V
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3

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