Overview
The BLF6G20LS-110,118 is a 110 W LDMOS power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 1800 MHz to 2000 MHz, making it suitable for various wireless communication standards such as GSM, GSM EDGE, W-CDMA, and CDMA. Although this product has been discontinued and replaced by the BLC9G20LS-120V, it remains a significant component in the realm of RF power amplifiers due to its high performance and robust features.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 1800 | 2000 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 110 | W | ||
| G p | power gain | P L(AV) = 25 W; V DS = 28 V | 18 | 19 | dB | |
| η D | drain efficiency | P L(AV) = 25 W; V DS = 28 V; 1930 MHz < f < 1990 MHz; I Dq = 900 mA | 28 | 32 | % | |
| P L(AV) | average output power | 25 | W | |||
| IMD3 | third-order intermodulation distortion | P L(AV) = 25 W; V DS = 28 V; I Dq = 900 mA | -34 | -28 | dBc | |
| ACPR | adjacent channel power ratio | P L(AV) = 25 W; V DS = 28 V; 1930 MHz < f < 1990 MHz; I Dq = 900 mA | -38 | -33 | dBc | |
| V DS | drain-source voltage | 65 | V | |||
| V GS | gate-source voltage | -0.5 | 13 | V | ||
| I D | drain current | 29 | A | |||
| T stg | storage temperature | -65 | 150 | °C | ||
| T j | junction temperature | 225 | °C |
Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations
- Multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Q & A
- What is the frequency range of the BLF6G20LS-110,118 transistor?
The BLF6G20LS-110,118 operates within the frequency range of 1800 MHz to 2000 MHz.
- What is the nominal output power of the BLF6G20LS-110,118 at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 110 W.
- What is the typical power gain of the BLF6G20LS-110,118?
The typical power gain is 19 dB.
- What is the drain efficiency of the BLF6G20LS-110,118?
The drain efficiency is typically 32% under specified conditions.
- What are the key features of the BLF6G20LS-110,118 transistor?
Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability.
- Is the BLF6G20LS-110,118 compliant with RoHS directives?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).
- What are the typical applications of the BLF6G20LS-110,118 transistor?
Typical applications include RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations, as well as multicarrier applications in the 1800 MHz to 2000 MHz frequency range.
- What is the maximum drain-source voltage for the BLF6G20LS-110,118?
The maximum drain-source voltage is 65 V.
- What is the maximum junction temperature for the BLF6G20LS-110,118?
The maximum junction temperature is 225 °C.
- Has the BLF6G20LS-110,118 been discontinued?
Yes, the BLF6G20LS-110,118 has been discontinued and is replaced by the BLC9G20LS-120V.
