BLF888,112
  • Share:

Ampleon USA Inc. BLF888,112

Manufacturer No:
BLF888,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 19DB SOT979A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888A,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for reliable performance in various RF amplification and switching applications. It features high voltage and current handling capabilities, making it suitable for use in industrial and commercial settings. The BLF888A,112 is part of Ampleon's LDMOS (Laterally Diffused Metal Oxide Semiconductor) product line, known for its excellent ruggedness and efficiency in digital and analog transmitter applications.

Key Specifications

Parameter Value
Manufacturer Ampleon USA Inc.
Part Number BLF888A,112
Technology LDMOS
Configuration Dual, Common Source
Frequency Min 0.47 GHz
Frequency Max 0.86 GHz
Output Power 600 W
Gain 20 dB
Typical Efficiency 58%
Supply Voltage 50 V
Rated Voltage 110 V
Current - Test 1.3 A
Package / Case SOT-539A
Mounting Type Surface Mount

Key Features

  • High Voltage Handling: Designed to handle high voltage levels up to 110 V, making it suitable for industrial and commercial applications.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or applications where energy efficiency is crucial.
  • High Output Power: Capable of delivering 600 W of output power, making it suitable for high-power RF amplification applications.
  • High Gain: Provides a gain of 20 dB, enhancing signal strength in RF systems.
  • Efficient Operation: Offers a typical efficiency of 58%, ensuring efficient operation and minimizing heat generation.

Applications

  • RF Amplification: Commonly used in RF amplification applications where high voltage and current handling capabilities are required.
  • Industrial Automation Systems: Suitable for use in industrial automation systems due to its ruggedness and reliability.
  • Commercial Communication Networks: Used in commercial communication networks for reliable and efficient signal transmission.
  • Broadcast Transmitter Applications: Ideal for digital and analog transmitter applications in broadcast systems.
  • Battery-Powered Devices: Suitable for battery-powered devices due to its low power consumption.

Q & A

  1. What is the part number of this RF power transistor?

    The part number is BLF888A,112.

  2. Who is the manufacturer of the BLF888A,112?

    The manufacturer is Ampleon USA Inc..

  3. What is the frequency range of the BLF888A,112?

    The frequency range is from 0.47 GHz to 0.86 GHz.

  4. What is the output power of the BLF888A,112?

    The output power is 600 W.

  5. What is the gain of the BLF888A,112?

    The gain is 20 dB.

  6. What is the typical efficiency of the BLF888A,112?

    The typical efficiency is 58%.

  7. What is the supply voltage of the BLF888A,112?

    The supply voltage is 50 V.

  8. What is the rated voltage of the BLF888A,112?

    The rated voltage is 110 V.

  9. In what package is the BLF888A,112 available?

    The BLF888A,112 is available in the SOT-539A package.

  10. What are some common applications of the BLF888A,112?

    Common applications include RF amplification, industrial automation systems, commercial communication networks, broadcast transmitter applications, and battery-powered devices.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:19dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:104 V
Package / Case:SOT-979A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
212

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF888,112 BLF888A,112 BLF888B,112 BLF878,112 BLF881,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Not For New Designs Not For New Designs Obsolete Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS
Frequency 860MHz 860MHz 860MHz 860MHz 860MHz
Gain 19dB 21dB 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V 40 V 50 V
Current Rating (Amps) - - - - -
Noise Figure - - - - -
Current - Test 1.3 A 1.3 A 1.3 A 1.4 A 500 mA
Power - Output 250W 600W 250W 300W 140W
Voltage - Rated 104 V 110 V 104 V 89 V 104 V
Package / Case SOT-979A SOT-539A SOT-539A SOT-979A SOT-467C
Supplier Device Package CDFM2 SOT539A SOT539A CDFM2 SOT467C

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
MMBFJ309
MMBFJ309
onsemi
RF MOSFET N-CH JFET 10V SOT23-3
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
A2I25H060NR1
A2I25H060NR1
NXP USA Inc.
IC RF LDMOS AMP

Related Product By Brand

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO