BLF6G27-10GHJ
  • Share:

Ampleon USA Inc. BLF6G27-10GHJ

Manufacturer No:
BLF6G27-10GHJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 19DB SOT975C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27-10GHJ is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor manufactured by Ampleon USA Inc. This device is specifically designed for base station applications, operating within the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. It is known for its high power handling capabilities and efficiency, making it a reliable choice for wireless communication infrastructure.

Key Specifications

ParameterValue
Frequency Range2300 MHz to 2400 MHz, 2500 MHz to 2700 MHz
Power Output10 W
Voltage Rating65 V
Package TypeSOT975C
Gain19 dB

Key Features

  • High power output of 10 W, suitable for base station applications.
  • Operates within the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
  • High voltage rating of 65 V.
  • High gain of 19 dB.
  • LDMOS technology for high efficiency and reliability.

Applications

The BLF6G27-10GHJ is primarily used in base station applications for wireless communication systems, including cellular networks and other high-power RF systems. Its high power handling and efficiency make it an ideal choice for amplifying RF signals in these environments.

Q & A

  1. What is the frequency range of the BLF6G27-10GHJ? The BLF6G27-10GHJ operates within the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
  2. What is the power output of the BLF6G27-10GHJ? The power output is 10 W.
  3. What is the voltage rating of the BLF6G27-10GHJ? The voltage rating is 65 V.
  4. What package type does the BLF6G27-10GHJ use? The package type is SOT975C.
  5. What is the gain of the BLF6G27-10GHJ? The gain is 19 dB.
  6. What technology is used in the BLF6G27-10GHJ? The BLF6G27-10GHJ uses LDMOS technology.
  7. What are the primary applications of the BLF6G27-10GHJ? The primary applications are in base station systems for wireless communication.
  8. Why is the BLF6G27-10GHJ suitable for base station applications? It is suitable due to its high power handling, efficiency, and reliability.
  9. Where can I find detailed specifications for the BLF6G27-10GHJ? Detailed specifications can be found on the Ampleon website or through distributors like Digi-Key.
  10. Is the BLF6G27-10GHJ available for purchase? Yes, it is available for purchase from various electronics distributors.

Product Attributes

Transistor Type:LDMOS
Frequency:2.5GHz ~ 2.7GHz
Gain:19dB
Voltage - Test:28 V
Current Rating (Amps):3.5A
Noise Figure:- 
Current - Test:130 mA
Power - Output:2W
Voltage - Rated:65 V
Package / Case:SOT-975C
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
SD2941-10W
SD2941-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4