BLF647PSJ
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Ampleon USA Inc. BLF647PSJ

Manufacturer No:
BLF647PSJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB SOT1121B
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BLF647PSJ is a high-performance RF LDMOS transistor manufactured by Ampleon USA Inc. This component is designed for broadband operation and is particularly suited for communication transmitter applications. Although the BLF647 has been discontinued and replaced by the BLF647P, the BLF647PSJ variant continues to offer advanced features and benefits.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range frequency range 1 800 MHz
P L(1dB) nominal output power at 1 dB gain compression Test signal: CW 150 W
G p power gain P L = 150 W; V DS = 32 V; f = 800 MHz 12.5 dB
η D drain efficiency P L = 150 W; V DS = 32 V; f = 800 MHz; I Dq = 1000 mA 60 %
P L output power f = 800 MHz; V DS = 32 V 150 W
V DS drain-source voltage 32 V
Package SOT-1121B

Key Features

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range

Applications

The BLF647PSJ is primarily used in communication transmitter applications within the HF to 800 MHz frequency range. It is suitable for various radio communication systems, including broadcast, navigation, and safety radio applications.

Q & A

  1. What is the BLF647PSJ?

    The BLF647PSJ is a high-performance RF LDMOS transistor manufactured by Ampleon USA Inc.

  2. What are the key features of the BLF647PSJ?

    Key features include high power gain, easy power control, excellent ruggedness, and internal input damping for stability.

  3. What is the frequency range of the BLF647PSJ?

    The BLF647PSJ operates within the frequency range of HF to 800 MHz.

  4. What is the nominal output power at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 150 W.

  5. What is the drain efficiency of the BLF647PSJ?

    The drain efficiency is 60% at specified conditions.

  6. What package type does the BLF647PSJ use?

    The BLF647PSJ is packaged in a SOT-1121B package.

  7. Is the BLF647PSJ suitable for surface mount applications?

    Yes, the BLF647PSJ is suitable for surface mount applications.

  8. What are the typical applications of the BLF647PSJ?

    The BLF647PSJ is used in communication transmitter applications, including broadcast, navigation, and safety radio systems.

  9. Has the BLF647 been discontinued?

    Yes, the BLF647 has been discontinued and replaced by the BLF647P, but the BLF647PSJ variant is still available.

  10. Where can I find more detailed specifications for the BLF647PSJ?

    More detailed specifications can be found in the datasheet available on the Ampleon website or through authorized distributors.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:17.5dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:200W
Voltage - Rated:65 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
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BLF647PSJ
BLF647PSJ
RF FET LDMOS 65V 17DB SOT1121B

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