BLF647PSJ
  • Share:

Ampleon USA Inc. BLF647PSJ

Manufacturer No:
BLF647PSJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB SOT1121B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF647PSJ is a high-performance RF LDMOS transistor manufactured by Ampleon USA Inc. This component is designed for broadband operation and is particularly suited for communication transmitter applications. Although the BLF647 has been discontinued and replaced by the BLF647P, the BLF647PSJ variant continues to offer advanced features and benefits.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range frequency range 1 800 MHz
P L(1dB) nominal output power at 1 dB gain compression Test signal: CW 150 W
G p power gain P L = 150 W; V DS = 32 V; f = 800 MHz 12.5 dB
η D drain efficiency P L = 150 W; V DS = 32 V; f = 800 MHz; I Dq = 1000 mA 60 %
P L output power f = 800 MHz; V DS = 32 V 150 W
V DS drain-source voltage 32 V
Package SOT-1121B

Key Features

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range

Applications

The BLF647PSJ is primarily used in communication transmitter applications within the HF to 800 MHz frequency range. It is suitable for various radio communication systems, including broadcast, navigation, and safety radio applications.

Q & A

  1. What is the BLF647PSJ?

    The BLF647PSJ is a high-performance RF LDMOS transistor manufactured by Ampleon USA Inc.

  2. What are the key features of the BLF647PSJ?

    Key features include high power gain, easy power control, excellent ruggedness, and internal input damping for stability.

  3. What is the frequency range of the BLF647PSJ?

    The BLF647PSJ operates within the frequency range of HF to 800 MHz.

  4. What is the nominal output power at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 150 W.

  5. What is the drain efficiency of the BLF647PSJ?

    The drain efficiency is 60% at specified conditions.

  6. What package type does the BLF647PSJ use?

    The BLF647PSJ is packaged in a SOT-1121B package.

  7. Is the BLF647PSJ suitable for surface mount applications?

    Yes, the BLF647PSJ is suitable for surface mount applications.

  8. What are the typical applications of the BLF647PSJ?

    The BLF647PSJ is used in communication transmitter applications, including broadcast, navigation, and safety radio systems.

  9. Has the BLF647 been discontinued?

    Yes, the BLF647 has been discontinued and replaced by the BLF647P, but the BLF647PSJ variant is still available.

  10. Where can I find more detailed specifications for the BLF647PSJ?

    More detailed specifications can be found in the datasheet available on the Ampleon website or through authorized distributors.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:17.5dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:200W
Voltage - Rated:65 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$213.04
5

Please send RFQ , we will respond immediately.

Same Series
BLF647PSJ
BLF647PSJ
RF FET LDMOS 65V 17DB SOT1121B

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B