Overview
The BLF7G24LS-100 is a 100 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 2300 MHz to 2400 MHz, making it suitable for various wireless communication systems. Although this product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| f range | 2300 | 2400 | MHz | ||
| P L(3dB) | Test signal: NCDMA/IS95 | 100 | W | ||
| G p | V DS = 28 V | 17.3 | 18 | dB | |
| RL in | V DS = 28 V; I Dq = 900 mA | -14 | dB | ||
| η D | V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA | 22 | 27 | % | |
| P L(AV) | 20 | W | |||
| ACPR 885k | P L(AV) = 20 W; V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA | -46 | -40 | dBc |
Key Features
- High Efficiency: The BLF7G24LS-100 offers high efficiency, which is crucial for minimizing power consumption and heat generation in base station applications.
- Integrated ESD Protection: This transistor includes integrated ESD (Electrostatic Discharge) protection, enhancing its reliability and durability.
- Low Memory Effects: It features low memory effects, providing excellent digital pre-distortion capability, which is essential for maintaining signal integrity.
- Internally Matched: The transistor is internally matched, making it easier to integrate into RF power amplifier designs.
- Excellent Ruggedness: Known for its excellent ruggedness, this transistor can withstand various operational stresses.
- Low Rth: It has a low thermal resistance (Rth), ensuring excellent thermal stability and performance.
- RoHS Compliance: The BLF7G24LS-100 is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for Base Stations: This transistor is specifically designed for use in RF power amplifiers in base station applications.
- Multicarrier Applications: It is suitable for multicarrier applications within the 2300 MHz to 2400 MHz frequency range.
Q & A
- What is the frequency range of the BLF7G24LS-100 transistor?
The BLF7G24LS-100 operates within the frequency range of 2300 MHz to 2400 MHz.
- What is the nominal output power of the BLF7G24LS-100 at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 100 W.
- What is the power gain of the BLF7G24LS-100?
The power gain is approximately 18 dB when V DS = 28 V.
- Does the BLF7G24LS-100 have integrated ESD protection?
- What are the key benefits of the low memory effects in the BLF7G24LS-100?
The low memory effects provide excellent digital pre-distortion capability, which is essential for maintaining signal integrity.
- Is the BLF7G24LS-100 internally matched?
- What is the thermal stability like for the BLF7G24LS-100?
The transistor has a low thermal resistance (Rth), ensuring excellent thermal stability.
- Is the BLF7G24LS-100 RoHS compliant?
- What are the primary applications of the BLF7G24LS-100?
The primary applications include RF power amplifiers for base stations and multicarrier applications within the 2300 MHz to 2400 MHz frequency range.
- What is the current status of the BLF7G24LS-100 product?
The BLF7G24LS-100 has been discontinued. For more information, refer to the discontinuation notice.
