Overview
The BLF278/01,112 is a high-performance RF power MOSFET produced by Ampleon USA Inc. This device is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, encapsulated in a 4-lead SOT262A1 balanced flange package. It is designed for use in VHF and other high-frequency applications, offering excellent power handling and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 125 | V |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Continuous Drain Current (Id) | 22 | A |
| Pulse Drain Current (Idp) | 44 | A |
| Power Dissipation (Ptot) | 500 | W |
| Package Type | SOT262A1 | |
| Operating Frequency | Up to VHF range |
Key Features
- Dual push-pull configuration for balanced operation
- High power handling capability up to 500 W
- Excellent efficiency in VHF and other high-frequency applications
- Enhancement mode vertical D-MOS transistor technology for high reliability
- 4-lead SOT262A1 balanced flange package for good thermal management
- Incorporates two ceramic caps for improved stability and performance
Applications
- VHF power amplifiers
- Broadcast transmitters
- Industrial and medical RF generators
- Aerospace and defense applications
- High-power RF systems requiring balanced operation
Q & A
- What is the maximum drain-source voltage of the BLF278/01,112?
The maximum drain-source voltage (Vds) is 125 V.
- What is the package type of the BLF278/01,112?
The package type is SOT262A1.
- What is the continuous drain current rating of the BLF278/01,112?
The continuous drain current (Id) is 22 A.
- What are the typical applications of the BLF278/01,112?
Typical applications include VHF power amplifiers, broadcast transmitters, industrial and medical RF generators, and aerospace and defense applications.
- What is the power dissipation capability of the BLF278/01,112?
The power dissipation (Ptot) is up to 500 W.
- Does the BLF278/01,112 come with integrated ceramic caps?
- What is the gate-source voltage rating of the BLF278/01,112?
The gate-source voltage (Vgs) is ±20 V.
- What is the pulse drain current rating of the BLF278/01,112?
The pulse drain current (Idp) is 44 A.
- What type of transistor technology is used in the BLF278/01,112?
The BLF278/01,112 uses enhancement mode vertical D-MOS transistor technology.
- Why is the SOT262A1 package used for the BLF278/01,112?
The SOT262A1 package is used for good thermal management and balanced operation.
