BLF7G22LS-130,112
  • Share:

Ampleon USA Inc. BLF7G22LS-130,112

Manufacturer No:
BLF7G22LS-130,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18.5DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G22LS-130,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in base station applications, particularly in the frequency range of 2.11 GHz to 2.17 GHz. It is part of Ampleon's portfolio of LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistors, known for their excellent ruggedness and low memory effects.

Key Specifications

ParameterValue
Frequency Range2.11 GHz ~ 2.17 GHz
Power Output130 W
Voltage28 V
Current950 mA
Gain18.5 dB
Package TypeSOT502B

Key Features

  • Excellent ruggedness, ensuring reliable operation under various conditions.
  • Low memory effects, which help in maintaining consistent performance.
  • High power output of 130 W, suitable for high-power base station applications.
  • Operates within the frequency range of 2.11 GHz to 2.17 GHz, making it ideal for mobile broadband applications.

Applications

The BLF7G22LS-130,112 is primarily used in base station applications for mobile broadband. It is suitable for systems operating in the frequency range of 2000 MHz to 2200 MHz, making it a key component in cellular network infrastructure.

Q & A

  1. What is the frequency range of the BLF7G22LS-130,112? The frequency range is 2.11 GHz to 2.17 GHz.
  2. What is the power output of this transistor? The power output is 130 W.
  3. What type of semiconductor technology is used in this transistor? It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  4. What is the typical voltage and current for this transistor? The typical voltage is 28 V, and the typical current is 950 mA.
  5. What package type is used for the BLF7G22LS-130,112? It is packaged in SOT502B.
  6. What are the key features of this transistor? It has excellent ruggedness and low memory effects.
  7. In what applications is the BLF7G22LS-130,112 commonly used? It is commonly used in base station applications for mobile broadband.
  8. Why is this transistor suitable for base station applications? It is suitable due to its high power output and operation within the specified frequency range.
  9. Where can I find detailed specifications for the BLF7G22LS-130,112? Detailed specifications can be found on the official Ampleon website or through distributors like Digi-Key and RFMW.
  10. Is the BLF7G22LS-130,112 still in production? Yes, it is currently in production and available for purchase.

Product Attributes

Transistor Type:LDMOS
Frequency:2.11GHz ~ 2.17GHz
Gain:18.5dB
Voltage - Test:28 V
Current Rating (Amps):28A
Noise Figure:- 
Current - Test:950 mA
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

-
477

Please send RFQ , we will respond immediately.

Same Series
BLF7G22LS-130,112
BLF7G22LS-130,112
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G22L-130,112
BLF7G22L-130,112
RF FET LDMOS 65V 18.5DB SOT502A

Similar Products

Part Number BLF7G22LS-130,112 BLF7G22LS-130,118 BLF7G22LS-160,112 BLF6G22LS-130,112 BLF7G22L-130,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz
Gain 18.5dB 18.5dB 18dB 17dB 18.5dB
Voltage - Test 28 V 28 V 28 V 28 V 28 V
Current Rating (Amps) 28A 28A 36A 34A 28A
Noise Figure - - - - -
Current - Test 950 mA 950 mA 1.3 A 1.1 A 950 mA
Power - Output 30W 30W 43W 30W 30W
Voltage - Rated 65 V 65 V 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502B SOT502B SOT502B SOT502A

Related Product By Categories

BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
A2T23H300-24SR6
A2T23H300-24SR6
NXP USA Inc.
IC TRANS RF LDMOS
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R

Related Product By Brand

MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF8G10LS-160V,118
BLF8G10LS-160V,118
Ampleon USA Inc.
TRANS RF PWR LDMOS 160W SOT502B