BLF6G27-10G,112
  • Share:

Ampleon USA Inc. BLF6G27-10G,112

Manufacturer No:
BLF6G27-10G,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 19DB SOT975C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27-10G,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor manufactured by Ampleon USA Inc. This device is specifically designed for base station applications, operating within the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. It is renowned for its high power output and reliability, making it a crucial component in modern telecommunications infrastructure.

Key Specifications

ParameterValue
TechnologyLDMOS
Frequency Range2300 MHz - 2400 MHz, 2500 MHz - 2700 MHz
Power Output10 W
Gain19 dB
Voltage - Rated65 V
Current Rating (Amps)3.5 A
Package TypeSOT538A

Key Features

  • High power output of 10 W, making it suitable for high-power base station applications.
  • Operates within the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
  • High gain of 19 dB, enhancing signal strength and quality.
  • LDMOS technology for high efficiency and reliability.
  • Rated voltage of 65 V and current rating of 3.5 A.
  • SOT538A package type for compact and efficient design.

Applications

The BLF6G27-10G,112 is primarily used in base station applications for mobile broadband networks. It is ideal for systems requiring high power and efficiency in the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. This includes cellular base stations, wireless communication systems, and other high-power RF applications.

Q & A

  1. What is the BLF6G27-10G,112 used for? The BLF6G27-10G,112 is used in base station applications for mobile broadband networks.
  2. What is the frequency range of the BLF6G27-10G,112? The frequency range is 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
  3. What is the power output of the BLF6G27-10G,112? The power output is 10 W.
  4. What technology does the BLF6G27-10G,112 use? It uses LDMOS technology.
  5. What is the gain of the BLF6G27-10G,112? The gain is 19 dB.
  6. What is the rated voltage of the BLF6G27-10G,112? The rated voltage is 65 V.
  7. What is the current rating of the BLF6G27-10G,112? The current rating is 3.5 A.
  8. What package type does the BLF6G27-10G,112 use? It uses the SOT538A package type.
  9. Why is LDMOS technology important in this component? LDMOS technology is important for its high efficiency and reliability in high-power RF applications.
  10. Can the BLF6G27-10G,112 be used in other applications besides base stations? While it is primarily designed for base stations, it can be used in other high-power RF applications requiring similar specifications.

Product Attributes

Transistor Type:LDMOS
Frequency:2.5GHz ~ 2.7GHz
Gain:19dB
Voltage - Test:28 V
Current Rating (Amps):3.5A
Noise Figure:- 
Current - Test:130 mA
Power - Output:2W
Voltage - Rated:65 V
Package / Case:SOT-975C
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Same Series
BLF6G27-10G,118
BLF6G27-10G,118
RF FET LDMOS 65V 19DB SOT975C
BLF6G27-10,118
BLF6G27-10,118
RF FET LDMOS 65V 19DB SOT975B
BLF6G27-10,112
BLF6G27-10,112
RF FET LDMOS 65V 19DB SOT975B

Similar Products

Part Number BLF6G27-10G,112 BLF6G27-10G,118 BLF6G21-10G,112 BLF6G27-10,112 BLF6G27-100,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.11GHz ~ 2.17GHz 2.5GHz ~ 2.7GHz -
Gain 19dB 19dB 18.5dB 19dB -
Voltage - Test 28 V 28 V 28 V 28 V 28 V
Current Rating (Amps) 3.5A 3.5A - 3.5A 29A
Noise Figure - - - - -
Current - Test 130 mA 130 mA 100 mA 130 mA 900 mA
Power - Output 2W 2W 700mW 2W 14W
Voltage - Rated 65 V 65 V 65 V 65 V 65 V
Package / Case SOT-975C SOT-975C SOT-538A SOT-975B SOT-502A
Supplier Device Package CDFM2 CDFM2 2-CSMD CDFM2 SOT502A

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
MRFE6VP5300NR1
MRFE6VP5300NR1
NXP USA Inc.
FET RF 2CH 133V 230MHZ TO-270
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BF861A,215
BF861A,215
NXP USA Inc.
JFET N-CH 25V 6.5MA SOT23
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
BLP7G22-10,135
BLP7G22-10,135
NXP USA Inc.
TRANSISTOR DRIVER LDMOS 12HVSON

Related Product By Brand

MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BLF6G38S-25,112
BLF6G38S-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539