Overview
The MMBFJ309LT1G is a N-Channel JFET (Junction Field-Effect Transistor) designed for VHF/UHF amplifier applications. Manufactured by onsemi, this device is part of the MMBFJ309L and MMBFJ310L series. It is known for its high performance and reliability in various electronic circuits.
This transistor is packaged in a SOT-23 (TO-236) case, which is Pb-free, halogen-free, and RoHS compliant. The 'S' prefix in some variants indicates AEC-Q101 qualification and PPAP capability, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | Vdc |
| Gate-Source Voltage | VGS | 25 | Vdc |
| Gate Current | IG | 10 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage (IG = -1.0 μAdc, VDS = 0) | V(BR)GSS | -25 | Vdc |
| Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) | VGS(off) | -1.0 to -4.0 | Vdc |
| Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 12 to 30 | mAdc |
| Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) | |Yfs| | 8.0 to 18 | mmhos |
Key Features
- Interchangeable Drain and Source: This feature allows for flexibility in circuit design.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability.
- Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.
- High Performance in VHF/UHF Amplifier Applications: Optimized for high-frequency operations.
- Low Noise and High Gain: Ideal for amplifier circuits requiring low noise and high gain.
Applications
- VHF/UHF Amplifiers: Used in radio frequency (RF) amplifiers for various communication systems.
- Automotive Electronics: Suitable for automotive applications due to its AEC-Q101 qualification.
- High-Frequency Circuits: Used in circuits requiring high-frequency operation such as in radar systems, satellite communications, and other RF applications.
- Low Noise Amplifiers: Ideal for applications where low noise is critical, such as in medical devices and scientific instruments.
Q & A
- What is the maximum drain-source voltage for the MMBFJ309LT1G?
The maximum drain-source voltage (VDS) is 25 Vdc.
- What is the thermal resistance, junction-to-ambient for this device?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
- Is the MMBFJ309LT1G Pb-free and RoHS compliant?
- What are the typical applications of the MMBFJ309LT1G?
The device is typically used in VHF/UHF amplifiers, automotive electronics, high-frequency circuits, and low noise amplifiers.
- What is the gate-source breakdown voltage for the MMBFJ309LT1G?
The gate-source breakdown voltage (V(BR)GSS) is -25 Vdc.
- What is the zero-gate-voltage drain current range for this transistor?
The zero-gate-voltage drain current (IDSS) ranges from 12 to 30 mA.
- Is the MMBFJ309LT1G suitable for high-frequency operations?
- What is the forward transfer admittance range for this device?
The forward transfer admittance (|Yfs|) ranges from 8.0 to 18 mmhos.
- Can the drain and source of the MMBFJ309LT1G be interchanged?
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature (TJ, Tstg) range is -55 to +150 °C.
