BLF6G27S-45,135
  • Share:

Ampleon USA Inc. BLF6G27S-45,135

Manufacturer No:
BLF6G27S-45,135
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18DB SOT608B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27S-45,135 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications, particularly in the frequency range of 2500 MHz to 2700 MHz. This transistor is optimized for WiMAX and other broadband wireless infrastructure applications. However, it is important to note that this product has been discontinued and replaced by the BLM9D2327S-50PBG model.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range25002700MHz
P L(3dB)nominal output power at 3 dB gain compression45W
G ppower gainP L(AV) = 7 W; V DS = 28 V16.518dB
RL ininput return lossP L(AV) = 7 W; V DS = 28 V; I Dq = 350 mA-10-5dB
η Ddrain efficiencyP L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA2224%
P L(AV)average output power7W
ACPR 885kadjacent channel power ratio (885 kHz)P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA-49-46dBc
ACPR 1980kadjacent channel power ratio (1980 kHz)P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA-64-61dBc

Key Features

  • Excellent ruggedness
  • Internally matched for ease of use
  • Excellent thermal stability
  • Integrated ESD protection
  • High efficiency
  • Designed for broadband operation
  • Low gold plating thickness on leads
  • Qualified up to a maximum V DS operation of 32 V
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 2500 MHz to 2700 MHz frequency range

Q & A

  1. What is the frequency range of the BLF6G27S-45 transistor?
    The frequency range of the BLF6G27S-45 transistor is from 2500 MHz to 2700 MHz.
  2. What is the nominal output power at 3 dB gain compression?
    The nominal output power at 3 dB gain compression is 45 W.
  3. What are the key features of the BLF6G27S-45 transistor?
    The key features include excellent ruggedness, internal matching, excellent thermal stability, integrated ESD protection, high efficiency, and compliance with RoHS directives.
  4. What are the typical applications of the BLF6G27S-45 transistor?
    The typical applications include RF power amplifiers for base stations and multicarrier applications in the specified frequency range.
  5. Has the BLF6G27S-45 transistor been discontinued?
    Yes, the BLF6G27S-45 transistor has been discontinued and replaced by the BLM9D2327S-50PBG model.
  6. What is the maximum V DS operation for the BLF6G27S-45 transistor?
    The maximum V DS operation is 32 V.
  7. Is the BLF6G27S-45 transistor compliant with any environmental directives?
    Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
  8. What is the average output power of the BLF6G27S-45 transistor?
    The average output power is 7 W.
  9. What are the adjacent channel power ratios for the BLF6G27S-45 transistor?
    The adjacent channel power ratios are -49 dBc at 885 kHz and -64 dBc at 1980 kHz.
  10. Where can I find more detailed specifications and documentation for the BLF6G27S-45 transistor?
    You can find detailed specifications and documentation on the official Ampleon website or through distributors like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS
Frequency:2.7GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):20A
Noise Figure:- 
Current - Test:350 mA
Power - Output:7W
Voltage - Rated:65 V
Package / Case:SOT-608B
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Same Series
BLF6G27S-45,135
BLF6G27S-45,135
RF FET LDMOS 65V 18DB SOT608B
BLF6G27S-45,118
BLF6G27S-45,118
RF FET LDMOS 65V 18DB SOT608B
BLF6G27S-45,112
BLF6G27S-45,112
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-45,135
BLF6G27-45,135
RF FET LDMOS 65V 18DB SOT608A

Similar Products

Part Number BLF6G27S-45,135 BLF6G27-45,135
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 2.7GHz 2.7GHz
Gain 18dB 18dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 20A 20A
Noise Figure - -
Current - Test 350 mA 350 mA
Power - Output 7W 7W
Voltage - Rated 65 V 65 V
Package / Case SOT-608B SOT-608A
Supplier Device Package CDFM2 CDFM2

Related Product By Categories

BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
PD54003L-E
PD54003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23

Related Product By Brand

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G20-180PN,112
BLF6G20-180PN,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539A
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B