BLF6G27S-45,135
  • Share:

Ampleon USA Inc. BLF6G27S-45,135

Manufacturer No:
BLF6G27S-45,135
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18DB SOT608B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27S-45,135 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications, particularly in the frequency range of 2500 MHz to 2700 MHz. This transistor is optimized for WiMAX and other broadband wireless infrastructure applications. However, it is important to note that this product has been discontinued and replaced by the BLM9D2327S-50PBG model.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range25002700MHz
P L(3dB)nominal output power at 3 dB gain compression45W
G ppower gainP L(AV) = 7 W; V DS = 28 V16.518dB
RL ininput return lossP L(AV) = 7 W; V DS = 28 V; I Dq = 350 mA-10-5dB
η Ddrain efficiencyP L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA2224%
P L(AV)average output power7W
ACPR 885kadjacent channel power ratio (885 kHz)P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA-49-46dBc
ACPR 1980kadjacent channel power ratio (1980 kHz)P L(AV) = 7 W; V DS = 28 V; 2500 MHz < f < 2700 MHz; I Dq = 350 mA-64-61dBc

Key Features

  • Excellent ruggedness
  • Internally matched for ease of use
  • Excellent thermal stability
  • Integrated ESD protection
  • High efficiency
  • Designed for broadband operation
  • Low gold plating thickness on leads
  • Qualified up to a maximum V DS operation of 32 V
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 2500 MHz to 2700 MHz frequency range

Q & A

  1. What is the frequency range of the BLF6G27S-45 transistor?
    The frequency range of the BLF6G27S-45 transistor is from 2500 MHz to 2700 MHz.
  2. What is the nominal output power at 3 dB gain compression?
    The nominal output power at 3 dB gain compression is 45 W.
  3. What are the key features of the BLF6G27S-45 transistor?
    The key features include excellent ruggedness, internal matching, excellent thermal stability, integrated ESD protection, high efficiency, and compliance with RoHS directives.
  4. What are the typical applications of the BLF6G27S-45 transistor?
    The typical applications include RF power amplifiers for base stations and multicarrier applications in the specified frequency range.
  5. Has the BLF6G27S-45 transistor been discontinued?
    Yes, the BLF6G27S-45 transistor has been discontinued and replaced by the BLM9D2327S-50PBG model.
  6. What is the maximum V DS operation for the BLF6G27S-45 transistor?
    The maximum V DS operation is 32 V.
  7. Is the BLF6G27S-45 transistor compliant with any environmental directives?
    Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
  8. What is the average output power of the BLF6G27S-45 transistor?
    The average output power is 7 W.
  9. What are the adjacent channel power ratios for the BLF6G27S-45 transistor?
    The adjacent channel power ratios are -49 dBc at 885 kHz and -64 dBc at 1980 kHz.
  10. Where can I find more detailed specifications and documentation for the BLF6G27S-45 transistor?
    You can find detailed specifications and documentation on the official Ampleon website or through distributors like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS
Frequency:2.7GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):20A
Noise Figure:- 
Current - Test:350 mA
Power - Output:7W
Voltage - Rated:65 V
Package / Case:SOT-608B
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Same Series
BLF6G27-45,112
BLF6G27-45,112
RF FET LDMOS 65V 18DB SOT608A
BLF6G27S-45,135
BLF6G27S-45,135
RF FET LDMOS 65V 18DB SOT608B
BLF6G27S-45,112
BLF6G27S-45,112
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-45,135
BLF6G27-45,135
RF FET LDMOS 65V 18DB SOT608A

Similar Products

Part Number BLF6G27S-45,135 BLF6G27-45,135
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 2.7GHz 2.7GHz
Gain 18dB 18dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 20A 20A
Noise Figure - -
Current - Test 350 mA 350 mA
Power - Output 7W 7W
Voltage - Rated 65 V 65 V
Package / Case SOT-608B SOT-608A
Supplier Device Package CDFM2 CDFM2

Related Product By Categories

PD57060-E
PD57060-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO10
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
MRF101AN-START
MRF101AN-START
NXP USA Inc.
MRF101AN RF ESSENTIALS COMPONENT
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF909AR215
BF909AR215
NXP USA Inc.
MOSFET N-CH SOT-143R
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
MRF6V2010NR1
MRF6V2010NR1
NXP USA Inc.
FET RF 110V 220MHZ TO270-2

Related Product By Brand

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF6G38S-25,112
BLF6G38S-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-50H
CLF1G0035-50H
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E
BLF8G10LS-160V,118
BLF8G10LS-160V,118
Ampleon USA Inc.
TRANS RF PWR LDMOS 160W SOT502B
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO