BLF888AS,112
  • Share:

Ampleon USA Inc. BLF888AS,112

Manufacturer No:
BLF888AS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 110V 21DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888AS,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in high-power RF applications, particularly in the frequency range of 0.47 to 0.86 GHz. It is part of Ampleon's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, known for its high efficiency and reliability in demanding RF environments.

Key Specifications

ParameterValue
Part NumberBLF888AS,112
ManufacturerAmpleon USA Inc.
DescriptionRF FET LDMOS 110V 21dB SOT539B
Frequency Range0.47 to 0.86 GHz
Power Output600 W
Gain21 dB
Voltage - Rated110 V
Transistor TypeLDMOS (Dual), Common Source
Package / CaseSOT539B
Current Rating - Test1.3 A (at specific conditions)

Key Features

  • High power output of 600 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 0.47 to 0.86 GHz, ideal for various RF systems.
  • LDMOS technology ensures high efficiency and reliability.
  • High gain of 21 dB, enhancing signal quality and strength.
  • Rated voltage of 110 V, providing robust performance under various operating conditions.
  • Common source configuration for ease of integration into RF circuits.

Applications

The BLF888AS,112 is designed for use in a variety of high-power RF applications, including:

  • Broadcast transmitters (e.g., FM, TV, and DAB).
  • Industrial RF heating and plasma generation.
  • Radar systems.
  • Wireless communication infrastructure (e.g., base stations).
  • Aerospace and defense systems.

Q & A

  1. What is the part number of this RF power transistor?
    The part number is BLF888AS,112.
  2. Who is the manufacturer of the BLF888AS,112?
    The manufacturer is Ampleon USA Inc.
  3. What is the frequency range of the BLF888AS,112?
    The frequency range is 0.47 to 0.86 GHz.
  4. What is the power output of the BLF888AS,112?
    The power output is 600 W.
  5. What is the gain of the BLF888AS,112?
    The gain is 21 dB.
  6. What type of transistor is the BLF888AS,112?
    The BLF888AS,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  7. What is the rated voltage of the BLF888AS,112?
    The rated voltage is 110 V.
  8. What is the package type of the BLF888AS,112?
    The package type is SOT539B.
  9. What are some common applications of the BLF888AS,112?
    Common applications include broadcast transmitters, industrial RF heating, radar systems, wireless communication infrastructure, and aerospace and defense systems.
  10. Where can I find detailed specifications and datasheets for the BLF888AS,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:110 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$231.40
2

Please send RFQ , we will respond immediately.

Same Series
BLF888AS,112
BLF888AS,112
RF FET LDMOS 110V 21DB SOT539B

Similar Products

Part Number BLF888AS,112 BLF888BS,112 BLF888A,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Not For New Designs Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 470MHz ~ 860MHz 860MHz
Gain 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - 2.8µA -
Noise Figure - - -
Current - Test 1.3 A - 1.3 A
Power - Output 250W 250W 600W
Voltage - Rated 110 V 104 V 110 V
Package / Case SOT-539B SOT539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BF904R,235
BF904R,235
NXP USA Inc.
MOSFET N-CH 7V 30MA SOT143
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
BLF8G10LS-160V,118
BLF8G10LS-160V,118
Ampleon USA Inc.
TRANS RF PWR LDMOS 160W SOT502B
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO