BLF888AS,112
  • Share:

Ampleon USA Inc. BLF888AS,112

Manufacturer No:
BLF888AS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 110V 21DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888AS,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in high-power RF applications, particularly in the frequency range of 0.47 to 0.86 GHz. It is part of Ampleon's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, known for its high efficiency and reliability in demanding RF environments.

Key Specifications

ParameterValue
Part NumberBLF888AS,112
ManufacturerAmpleon USA Inc.
DescriptionRF FET LDMOS 110V 21dB SOT539B
Frequency Range0.47 to 0.86 GHz
Power Output600 W
Gain21 dB
Voltage - Rated110 V
Transistor TypeLDMOS (Dual), Common Source
Package / CaseSOT539B
Current Rating - Test1.3 A (at specific conditions)

Key Features

  • High power output of 600 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 0.47 to 0.86 GHz, ideal for various RF systems.
  • LDMOS technology ensures high efficiency and reliability.
  • High gain of 21 dB, enhancing signal quality and strength.
  • Rated voltage of 110 V, providing robust performance under various operating conditions.
  • Common source configuration for ease of integration into RF circuits.

Applications

The BLF888AS,112 is designed for use in a variety of high-power RF applications, including:

  • Broadcast transmitters (e.g., FM, TV, and DAB).
  • Industrial RF heating and plasma generation.
  • Radar systems.
  • Wireless communication infrastructure (e.g., base stations).
  • Aerospace and defense systems.

Q & A

  1. What is the part number of this RF power transistor?
    The part number is BLF888AS,112.
  2. Who is the manufacturer of the BLF888AS,112?
    The manufacturer is Ampleon USA Inc.
  3. What is the frequency range of the BLF888AS,112?
    The frequency range is 0.47 to 0.86 GHz.
  4. What is the power output of the BLF888AS,112?
    The power output is 600 W.
  5. What is the gain of the BLF888AS,112?
    The gain is 21 dB.
  6. What type of transistor is the BLF888AS,112?
    The BLF888AS,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  7. What is the rated voltage of the BLF888AS,112?
    The rated voltage is 110 V.
  8. What is the package type of the BLF888AS,112?
    The package type is SOT539B.
  9. What are some common applications of the BLF888AS,112?
    Common applications include broadcast transmitters, industrial RF heating, radar systems, wireless communication infrastructure, and aerospace and defense systems.
  10. Where can I find detailed specifications and datasheets for the BLF888AS,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:110 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$231.40
2

Please send RFQ , we will respond immediately.

Same Series
BLF888A,112
BLF888A,112
RF FET LDMOS 110V 21DB SOT539A

Similar Products

Part Number BLF888AS,112 BLF888BS,112 BLF888A,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Not For New Designs Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 470MHz ~ 860MHz 860MHz
Gain 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - 2.8µA -
Noise Figure - - -
Current - Test 1.3 A - 1.3 A
Power - Output 250W 250W 600W
Voltage - Rated 110 V 104 V 110 V
Package / Case SOT-539B SOT539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
A2I20H060NR1
A2I20H060NR1
NXP USA Inc.
IC TRANS RF LDMOS
BSS83,235
BSS83,235
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT143
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16

Related Product By Brand

MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B