BLF888AS,112
  • Share:

Ampleon USA Inc. BLF888AS,112

Manufacturer No:
BLF888AS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 110V 21DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888AS,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in high-power RF applications, particularly in the frequency range of 0.47 to 0.86 GHz. It is part of Ampleon's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, known for its high efficiency and reliability in demanding RF environments.

Key Specifications

ParameterValue
Part NumberBLF888AS,112
ManufacturerAmpleon USA Inc.
DescriptionRF FET LDMOS 110V 21dB SOT539B
Frequency Range0.47 to 0.86 GHz
Power Output600 W
Gain21 dB
Voltage - Rated110 V
Transistor TypeLDMOS (Dual), Common Source
Package / CaseSOT539B
Current Rating - Test1.3 A (at specific conditions)

Key Features

  • High power output of 600 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 0.47 to 0.86 GHz, ideal for various RF systems.
  • LDMOS technology ensures high efficiency and reliability.
  • High gain of 21 dB, enhancing signal quality and strength.
  • Rated voltage of 110 V, providing robust performance under various operating conditions.
  • Common source configuration for ease of integration into RF circuits.

Applications

The BLF888AS,112 is designed for use in a variety of high-power RF applications, including:

  • Broadcast transmitters (e.g., FM, TV, and DAB).
  • Industrial RF heating and plasma generation.
  • Radar systems.
  • Wireless communication infrastructure (e.g., base stations).
  • Aerospace and defense systems.

Q & A

  1. What is the part number of this RF power transistor?
    The part number is BLF888AS,112.
  2. Who is the manufacturer of the BLF888AS,112?
    The manufacturer is Ampleon USA Inc.
  3. What is the frequency range of the BLF888AS,112?
    The frequency range is 0.47 to 0.86 GHz.
  4. What is the power output of the BLF888AS,112?
    The power output is 600 W.
  5. What is the gain of the BLF888AS,112?
    The gain is 21 dB.
  6. What type of transistor is the BLF888AS,112?
    The BLF888AS,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  7. What is the rated voltage of the BLF888AS,112?
    The rated voltage is 110 V.
  8. What is the package type of the BLF888AS,112?
    The package type is SOT539B.
  9. What are some common applications of the BLF888AS,112?
    Common applications include broadcast transmitters, industrial RF heating, radar systems, wireless communication infrastructure, and aerospace and defense systems.
  10. Where can I find detailed specifications and datasheets for the BLF888AS,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:110 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$231.40
2

Please send RFQ , we will respond immediately.

Same Series
BLF888A,112
BLF888A,112
RF FET LDMOS 110V 21DB SOT539A

Similar Products

Part Number BLF888AS,112 BLF888BS,112 BLF888A,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Not For New Designs Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 470MHz ~ 860MHz 860MHz
Gain 21dB 21dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - 2.8µA -
Noise Figure - - -
Current - Test 1.3 A - 1.3 A
Power - Output 250W 250W 600W
Voltage - Rated 110 V 104 V 110 V
Package / Case SOT-539B SOT539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R

Related Product By Brand

BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
CLF1G0035-100,112
CLF1G0035-100,112
Ampleon USA Inc.
RF MOSFET HEMT 50V SOT467C
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4