AFT27S012NT1
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NXP USA Inc. AFT27S012NT1

Manufacturer No:
AFT27S012NT1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF POWER LDMOS TRANSISTO
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The AFT27S012NT1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by NXP USA Inc. This component is specifically tailored for use in cellular base station applications, covering a broad frequency range from 728 to 2700 MHz. It is part of the Airfast series, known for its reliability and efficiency in RF power amplification.

Key Specifications

ParameterValue
Frequency Range728 - 2700 MHz
Average Power Output1.26 W
Drain-Source Voltage (Vds)28 V
Package TypeAIRFAST (Specific package details available in datasheet)

Key Features

  • High efficiency and reliability in RF power amplification
  • Wide frequency range of 728 to 2700 MHz, making it versatile for various cellular base station applications
  • Designed with LDMOS technology for enhanced performance and durability
  • Operates at a drain-source voltage of 28 V, suitable for high-power RF applications

Applications

The AFT27S012NT1 is primarily used in cellular base station applications, including but not limited to:

  • Cellular infrastructure
  • RF power amplifiers
  • Telecommunication systems
  • Wireless communication equipment

Q & A

  1. What is the frequency range of the AFT27S012NT1? The frequency range is 728 to 2700 MHz.
  2. What is the average power output of the AFT27S012NT1? The average power output is 1.26 W.
  3. What is the drain-source voltage (Vds) of the AFT27S012NT1? The drain-source voltage is 28 V.
  4. What is the primary application of the AFT27S012NT1? The primary application is in cellular base station equipment.
  5. What technology is used in the AFT27S012NT1? It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  6. Where can I find detailed specifications for the AFT27S012NT1? Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key.
  7. Is the AFT27S012NT1 suitable for high-power RF applications? Yes, it is designed for high-power RF applications.
  8. What package type does the AFT27S012NT1 come in? It comes in the AIRFAST package type.
  9. Can the AFT27S012NT1 be used in other types of RF equipment besides cellular base stations? While it is primarily designed for cellular base stations, it can be considered for other high-power RF applications within its frequency and power specifications.
  10. Where can I purchase the AFT27S012NT1? It can be purchased from authorized distributors such as Digi-Key, Mouser, and directly from NXP.

Product Attributes

Transistor Type:LDMOS
Frequency:728MHz ~ 2.7GHz
Gain:20.9dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:90 mA
Power - Output:13W
Voltage - Rated:65 V
Package / Case:PLD-1.5W
Supplier Device Package:PLD-1.5W
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Similar Products

Part Number AFT27S012NT1 AFT27S010NT1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 728MHz ~ 2.7GHz 2.17GHz
Gain 20.9dB 21.7dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 10µA -
Noise Figure - -
Current - Test 90 mA 90 mA
Power - Output 13W 1.26W
Voltage - Rated 65 V 65 V
Package / Case PLD-1.5W PLD-1.5W
Supplier Device Package PLD-1.5W PLD-1.5W

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