AFT27S012NT1
  • Share:

NXP USA Inc. AFT27S012NT1

Manufacturer No:
AFT27S012NT1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF POWER LDMOS TRANSISTO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT27S012NT1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by NXP USA Inc. This component is specifically tailored for use in cellular base station applications, covering a broad frequency range from 728 to 2700 MHz. It is part of the Airfast series, known for its reliability and efficiency in RF power amplification.

Key Specifications

ParameterValue
Frequency Range728 - 2700 MHz
Average Power Output1.26 W
Drain-Source Voltage (Vds)28 V
Package TypeAIRFAST (Specific package details available in datasheet)

Key Features

  • High efficiency and reliability in RF power amplification
  • Wide frequency range of 728 to 2700 MHz, making it versatile for various cellular base station applications
  • Designed with LDMOS technology for enhanced performance and durability
  • Operates at a drain-source voltage of 28 V, suitable for high-power RF applications

Applications

The AFT27S012NT1 is primarily used in cellular base station applications, including but not limited to:

  • Cellular infrastructure
  • RF power amplifiers
  • Telecommunication systems
  • Wireless communication equipment

Q & A

  1. What is the frequency range of the AFT27S012NT1? The frequency range is 728 to 2700 MHz.
  2. What is the average power output of the AFT27S012NT1? The average power output is 1.26 W.
  3. What is the drain-source voltage (Vds) of the AFT27S012NT1? The drain-source voltage is 28 V.
  4. What is the primary application of the AFT27S012NT1? The primary application is in cellular base station equipment.
  5. What technology is used in the AFT27S012NT1? It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  6. Where can I find detailed specifications for the AFT27S012NT1? Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key.
  7. Is the AFT27S012NT1 suitable for high-power RF applications? Yes, it is designed for high-power RF applications.
  8. What package type does the AFT27S012NT1 come in? It comes in the AIRFAST package type.
  9. Can the AFT27S012NT1 be used in other types of RF equipment besides cellular base stations? While it is primarily designed for cellular base stations, it can be considered for other high-power RF applications within its frequency and power specifications.
  10. Where can I purchase the AFT27S012NT1? It can be purchased from authorized distributors such as Digi-Key, Mouser, and directly from NXP.

Product Attributes

Transistor Type:LDMOS
Frequency:728MHz ~ 2.7GHz
Gain:20.9dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:90 mA
Power - Output:13W
Voltage - Rated:65 V
Package / Case:PLD-1.5W
Supplier Device Package:PLD-1.5W
0 Remaining View Similar

In Stock

$23.15
10

Please send RFQ , we will respond immediately.

Similar Products

Part Number AFT27S012NT1 AFT27S010NT1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 728MHz ~ 2.7GHz 2.17GHz
Gain 20.9dB 21.7dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 10µA -
Noise Figure - -
Current - Test 90 mA 90 mA
Power - Output 13W 1.26W
Voltage - Rated 65 V 65 V
Package / Case PLD-1.5W PLD-1.5W
Supplier Device Package PLD-1.5W PLD-1.5W

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BF998,235
BF998,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B

Related Product By Brand

BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
74LVC1G04GW/DG125
74LVC1G04GW/DG125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN