Overview
The AFT27S010NT1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by NXP USA Inc. This device is optimized for cellular base station applications and operates across a broad frequency range of 100 to 3600 MHz. It is known for its high average power output and robust thermal characteristics, making it suitable for demanding RF power amplification tasks.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
| Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
| Operating Voltage | VDD | 32, +0 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature Range | TC | -40 to +150 | °C |
| Operating Junction Temperature Range | TJ | -40 to +150 | °C |
| Average Output Power | Pout | 1.26 W | |
| Thermal Resistance, Junction to Case | RθJC | 3.5 | °C/W |
Key Features
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Universal Broadband Driven Device with Internal RF Feedback
- High Average Output Power of 1.26 W
- Robust Thermal Characteristics with a Thermal Resistance of 3.5 °C/W
- Broad Frequency Range of 100 to 3600 MHz
Applications
The AFT27S010NT1 is primarily designed for cellular base station applications, including but not limited to:
- Cellular Infrastructure
- RF Power Amplification Systems
- Digital Predistortion Error Correction Systems
- Broadband Communication Systems
Q & A
- What is the frequency range of the AFT27S010NT1? The AFT27S010NT1 operates across a frequency range of 100 to 3600 MHz.
- What is the average output power of the AFT27S010NT1? The average output power is 1.26 W.
- What are the maximum drain-source and gate-source voltages for the AFT27S010NT1? The maximum drain-source voltage is 65 Vdc, and the maximum gate-source voltage is 10 Vdc.
- What is the thermal resistance of the AFT27S010NT1? The thermal resistance from junction to case is 3.5 °C/W.
- What are the primary applications of the AFT27S010NT1? The primary applications include cellular base station and RF power amplification systems.
- Does the AFT27S010NT1 support digital predistortion error correction? Yes, it is designed for digital predistortion error correction systems.
- What is the operating junction temperature range of the AFT27S010NT1? The operating junction temperature range is -40 to +150 °C.
- Is the AFT27S010NT1 suitable for broadband communication systems? Yes, it is suitable for broadband communication systems due to its broad frequency range.
- Where can I find design files and models for the AFT27S010NT1? Design files and models can be found on the NXP website, including ADS and AWR model kits.
- What type of package does the AFT27S010NT1 come in? The device comes in a PLD-1.5W plastic package.
