PD55003L-E
  • Share:

STMicroelectronics PD55003L-E

Manufacturer No:
PD55003L-E
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANSISTOR RF 5X5 POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55003L-E is a high-performance RF power transistor designed by STMicroelectronics. It is part of the LDMOS (Lateral Double-Diffused MOSFET) family and is specifically tailored for high-gain, broadband commercial and industrial applications. This N-channel, enhancement-mode lateral field-effect transistor operates in common source configuration and is known for its excellent thermal stability, linearity, and reliability. The device is packaged in an innovative leadless SMD plastic package, PowerFLAT™, which enhances its thermal performance and compactness.

Key Specifications

Parameter Value Unit
Drain-source voltage (VBRDSS) 40 V
Gate-source voltage (VGS) -0.5 to +15 V
Drain current (ID) 2.5 A
Power dissipation (PDISS) at TC = 70°C 14 W
Storage temperature (Tstg) -65 to +150 °C
Operating junction temperature (Tj) 150 °C
Junction-case thermal resistance (Rth(j-c)) 5.7 °C/W
Output power (P1dB) at VDD = 12.5 V, f = 500 MHz 3 W
Power gain (GP) at VDD = 12.5 V, POUT = 3 W, f = 500 MHz 17 dB
Efficiency (ηD) at VDD = 12.5 V, POUT = 3 W, f = 500 MHz 50-52%

Key Features

  • Excellent thermal stability: Ensures reliable operation under various thermal conditions.
  • Common source configuration: Optimized for high-gain applications.
  • High output power and gain: Delivers 3 W output power with 17 dB gain at 500 MHz.
  • Innovative packaging: Leadless SMD plastic package (PowerFLAT™) for enhanced thermal performance and compact design.
  • ESD protection: Compliant with human body model and machine model standards.
  • Moisture sensitivity level: Rated MSL 3, ensuring robustness against moisture.
  • Superior linearity performances: Ideal for applications requiring high linearity, such as car mobile radio.

Applications

  • Broadband commercial and industrial applications: Suitable for a wide range of frequencies up to 1 GHz.
  • Car mobile radio: Its superior linearity makes it an ideal solution for mobile radio systems.
  • RF amplifiers: Used in various RF amplifier designs requiring high gain and efficiency.
  • Telecommunication equipment: Applicable in base stations, repeaters, and other telecommunication devices.

Q & A

  1. What is the maximum drain-source voltage of the PD55003L-E?

    The maximum drain-source voltage (VBRDSS) is 40 V.

  2. What is the typical output power of the PD55003L-E at 500 MHz?

    The typical output power (P1dB) at VDD = 12.5 V and f = 500 MHz is 3 W.

  3. What is the power gain of the PD55003L-E at 500 MHz?

    The power gain (GP) at VDD = 12.5 V, POUT = 3 W, and f = 500 MHz is approximately 17 dB.

  4. What is the efficiency of the PD55003L-E at 500 MHz?

    The efficiency (ηD) at VDD = 12.5 V, POUT = 3 W, and f = 500 MHz is between 50-52%.

  5. What type of packaging does the PD55003L-E use?

    The PD55003L-E is packaged in an innovative leadless SMD plastic package called PowerFLAT™.

  6. Does the PD55003L-E have ESD protection?

    Yes, the PD55003L-E has ESD protection compliant with human body model and machine model standards.

  7. What is the moisture sensitivity level of the PD55003L-E?

    The PD55003L-E is rated MSL 3.

  8. What are the typical applications of the PD55003L-E?

    The PD55003L-E is typically used in broadband commercial and industrial applications, car mobile radio, RF amplifiers, and telecommunication equipment.

  9. What is the maximum operating junction temperature of the PD55003L-E?

    The maximum operating junction temperature (Tj) is 150°C.

  10. What is the junction-case thermal resistance of the PD55003L-E?

    The junction-case thermal resistance (Rth(j-c)) is 5.7°C/W.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:19dB
Voltage - Test:12.5 V
Current Rating (Amps):2.5A
Noise Figure:- 
Current - Test:50 mA
Power - Output:3W
Voltage - Rated:40 V
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFLAT™ (5x5)
0 Remaining View Similar

In Stock

$7.56
125

Please send RFQ , we will respond immediately.

Similar Products

Part Number PD55003L-E PD55003S-E PD55008L-E PD54003L-E PD55003-E
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 500MHz 500MHz 500MHz 500MHz 500MHz
Gain 19dB 17dB 19dB 20dB 17dB
Voltage - Test 12.5 V 12.5 V 12.5 V 7.5 V 12.5 V
Current Rating (Amps) 2.5A 2.5A 5A 4A 2.5A
Noise Figure - - - - -
Current - Test 50 mA 50 mA 150 mA 50 mA 50 mA
Power - Output 3W 3W 8W 3W 3W
Voltage - Rated 40 V 40 V 40 V 25 V 40 V
Package / Case 8-PowerVDFN PowerSO-10 Exposed Bottom Pad 8-PowerVDFN 8-PowerVDFN PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerFLAT™ (5x5) PowerSO-10RF (Straight Lead) PowerFLAT™ (5x5) PowerFLAT™ (5x5) 10-PowerSO

Related Product By Categories

MW7IC2020NT1
MW7IC2020NT1
NXP USA Inc.
RF MOSFET LDMOS 28V 24PQFN
AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BF1202WR,135
BF1202WR,135
NXP USA Inc.
MOSFET N-CH DUAL GATE 4DFP
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
PD84001
PD84001
STMicroelectronics
FET RF 18V 870MHZ
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO