Overview
The NE5550279A-T1-A is a Silicon Power LDMOS (Laterally Diffused Metal Oxide Semiconductor) FET produced by California Eastern Laboratories (CEL). This RF MOSFET is designed for high-performance applications in the VHF to UHF frequency bands. It is notable for its high output power, high power added efficiency, and high linear gain, making it suitable for various radio system applications.
Key Specifications
| Category | Value |
|---|---|
| Manufacturer | CEL (California Eastern Laboratories) |
| Mount | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Number of Pins | 4 Pins |
| Supplier Device Package | 79A |
| Voltage Rated | 30V |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Current Rating (Amps) | 600mA |
| Frequency | 900MHz |
| Transistor Type | LDMOS |
| Gain | 22.5dB |
| Power - Output | 33dBm |
| Voltage - Test | 7.5V |
| Current - Test | 40mA |
| Gate to Source Voltage (Vgs) | 6V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
Key Features
- High Output Power: The NE5550279A-T1-A offers a high output power of 33dBm (typical) at 900MHz.
- High Power Added Efficiency: It achieves a high power added efficiency of 68% (typical) at 460MHz.
- High Linear Gain: The device features a high linear gain of 22.5dB (typical).
- High ESD Tolerance: It has high ESD tolerance, making it robust against electrostatic discharge.
- Suitable for VHF to UHF-Band Applications: Ideal for Class-AB power amplifiers in the VHF to UHF frequency bands.
Applications
- 150 MHz Band Radio System: Suitable for radio systems operating in the 150 MHz frequency band.
- 460 MHz Band Radio System: Applicable for radio systems in the 460 MHz frequency band.
- 900 MHz Band Radio System: Ideal for radio systems operating in the 900 MHz frequency band.
Q & A
- What is the NE5550279A-T1-A?
The NE5550279A-T1-A is a Silicon Power LDMOS FET produced by CEL, designed for high-performance RF applications.
- What is the operating frequency range of the NE5550279A-T1-A?
The device is suitable for applications in the VHF to UHF frequency bands, specifically mentioned for 150 MHz, 460 MHz, and 900 MHz.
- What is the output power of the NE5550279A-T1-A?
The output power is 33dBm (typical) at 900MHz.
- What is the gain of the NE5550279A-T1-A?
The device features a high linear gain of 22.5dB (typical).
- Is the NE5550279A-T1-A RoHS compliant?
Yes, the NE5550279A-T1-A is RoHS compliant.
- What is the maximum operating temperature of the NE5550279A-T1-A?
The maximum operating temperature is 150°C.
- What is the minimum operating temperature of the NE5550279A-T1-A?
The minimum operating temperature is -55°C.
- What is the current rating of the NE5550279A-T1-A?
The current rating is 600mA.
- Is the NE5550279A-T1-A radiation hardened?
No, the NE5550279A-T1-A is not radiation hardened.
- What is the packaging type of the NE5550279A-T1-A?
The device is packaged in Tape & Reel (TR) format.
- What is the status of the NE5550279A-T1-A?
The NE5550279A-T1-A is obsolete.
