NE5550234-T1-AZ
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CEL NE5550234-T1-AZ

Manufacturer No:
NE5550234-T1-AZ
Manufacturer:
CEL
Package:
Tape & Reel (TR)
Description:
FET RF 30V 900MHZ 3MINIMOLD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NE5550234-T1-AZ is a high-performance N-Channel RF MOSFET transistor produced by California Eastern Laboratories (CEL). This component is designed for high-frequency applications, particularly in the 900 MHz range. It is packaged in a 3-pin power minimold (Pb-Free) and is suitable for various RF power amplifier (PA) and switching applications due to its high power output and efficiency.

Key Specifications

ParameterValue
ConfigurationN-Channel
Frequency900 MHz
Output Power (Pout)33 dBm
Power Added Efficiency (PAE)68%
Gain23 dB
Packaging3-pin power minimold, Tape & Reel (TR)
Lead-Free StatusPb-Free

Key Features

  • High output power of 33 dBm, making it suitable for high-power RF applications.
  • High power added efficiency (PAE) of 68%, which enhances the overall efficiency of the system.
  • Gain of 23 dB, contributing to the component's high performance in amplification tasks.
  • Packaged in a 3-pin power minimold, which is Pb-Free, ensuring environmental compliance.
  • Operates at a frequency of 900 MHz, making it ideal for various wireless communication systems.

Applications

The NE5550234-T1-AZ is primarily used in RF power amplifier (PA) and switching applications. It is suitable for various wireless communication systems, including cellular base stations, wireless local area networks (WLAN), and other high-frequency communication devices. Its high power output and efficiency make it a reliable choice for applications requiring robust RF performance.

Q & A

  1. What is the configuration of the NE5550234-T1-AZ?
    The NE5550234-T1-AZ is an N-Channel RF MOSFET transistor.
  2. What is the operating frequency of the NE5550234-T1-AZ?
    The operating frequency is 900 MHz.
  3. What is the output power of the NE5550234-T1-AZ?
    The output power is 33 dBm.
  4. What is the power added efficiency (PAE) of the NE5550234-T1-AZ?
    The PAE is 68%.
  5. What is the gain of the NE5550234-T1-AZ?
    The gain is 23 dB.
  6. What type of packaging does the NE5550234-T1-AZ use?
    The component is packaged in a 3-pin power minimold and is available in Tape & Reel (TR).
  7. Is the NE5550234-T1-AZ lead-free?
    Yes, the NE5550234-T1-AZ is Pb-Free.
  8. What are the primary applications of the NE5550234-T1-AZ?
    The primary applications include RF power amplifier (PA) and switching tasks in wireless communication systems.
  9. Why is the NE5550234-T1-AZ suitable for high-frequency applications?
    It is suitable due to its high output power, high PAE, and high gain at 900 MHz.
  10. Is the NE5550234-T1-AZ still in production?
    No, the NE5550234-T1-AZ is listed as obsolete on some supplier websites.

Product Attributes

Transistor Type:N-Channel
Frequency:900MHz
Gain:23.5dB
Voltage - Test:7.5 V
Current Rating (Amps):600mA
Noise Figure:- 
Current - Test:40 mA
Power - Output:32.2dB
Voltage - Rated:30 V
Package / Case:TO-243AA
Supplier Device Package:3-PowerMiniMold
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Similar Products

Part Number NE5550234-T1-AZ NE5500234-T1-AZ
Manufacturer CEL Renesas Electronics America Inc
Product Status Obsolete Obsolete
Transistor Type N-Channel N-Channel
Frequency 900MHz 1.9GHz
Gain 23.5dB -
Voltage - Test 7.5 V 4.8 V
Current Rating (Amps) 600mA 1A
Noise Figure - -
Current - Test 40 mA 400 mA
Power - Output 32.2dB 32.5dBm
Voltage - Rated 30 V 20 V
Package / Case TO-243AA TO-243AA
Supplier Device Package 3-PowerMiniMold SOT-89

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