NE5550234-T1-AZ
  • Share:

CEL NE5550234-T1-AZ

Manufacturer No:
NE5550234-T1-AZ
Manufacturer:
CEL
Package:
Tape & Reel (TR)
Description:
FET RF 30V 900MHZ 3MINIMOLD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NE5550234-T1-AZ is a high-performance N-Channel RF MOSFET transistor produced by California Eastern Laboratories (CEL). This component is designed for high-frequency applications, particularly in the 900 MHz range. It is packaged in a 3-pin power minimold (Pb-Free) and is suitable for various RF power amplifier (PA) and switching applications due to its high power output and efficiency.

Key Specifications

ParameterValue
ConfigurationN-Channel
Frequency900 MHz
Output Power (Pout)33 dBm
Power Added Efficiency (PAE)68%
Gain23 dB
Packaging3-pin power minimold, Tape & Reel (TR)
Lead-Free StatusPb-Free

Key Features

  • High output power of 33 dBm, making it suitable for high-power RF applications.
  • High power added efficiency (PAE) of 68%, which enhances the overall efficiency of the system.
  • Gain of 23 dB, contributing to the component's high performance in amplification tasks.
  • Packaged in a 3-pin power minimold, which is Pb-Free, ensuring environmental compliance.
  • Operates at a frequency of 900 MHz, making it ideal for various wireless communication systems.

Applications

The NE5550234-T1-AZ is primarily used in RF power amplifier (PA) and switching applications. It is suitable for various wireless communication systems, including cellular base stations, wireless local area networks (WLAN), and other high-frequency communication devices. Its high power output and efficiency make it a reliable choice for applications requiring robust RF performance.

Q & A

  1. What is the configuration of the NE5550234-T1-AZ?
    The NE5550234-T1-AZ is an N-Channel RF MOSFET transistor.
  2. What is the operating frequency of the NE5550234-T1-AZ?
    The operating frequency is 900 MHz.
  3. What is the output power of the NE5550234-T1-AZ?
    The output power is 33 dBm.
  4. What is the power added efficiency (PAE) of the NE5550234-T1-AZ?
    The PAE is 68%.
  5. What is the gain of the NE5550234-T1-AZ?
    The gain is 23 dB.
  6. What type of packaging does the NE5550234-T1-AZ use?
    The component is packaged in a 3-pin power minimold and is available in Tape & Reel (TR).
  7. Is the NE5550234-T1-AZ lead-free?
    Yes, the NE5550234-T1-AZ is Pb-Free.
  8. What are the primary applications of the NE5550234-T1-AZ?
    The primary applications include RF power amplifier (PA) and switching tasks in wireless communication systems.
  9. Why is the NE5550234-T1-AZ suitable for high-frequency applications?
    It is suitable due to its high output power, high PAE, and high gain at 900 MHz.
  10. Is the NE5550234-T1-AZ still in production?
    No, the NE5550234-T1-AZ is listed as obsolete on some supplier websites.

Product Attributes

Transistor Type:N-Channel
Frequency:900MHz
Gain:23.5dB
Voltage - Test:7.5 V
Current Rating (Amps):600mA
Noise Figure:- 
Current - Test:40 mA
Power - Output:32.2dB
Voltage - Rated:30 V
Package / Case:TO-243AA
Supplier Device Package:3-PowerMiniMold
0 Remaining View Similar

In Stock

-
57

Please send RFQ , we will respond immediately.

Similar Products

Part Number NE5550234-T1-AZ NE5500234-T1-AZ
Manufacturer CEL Renesas Electronics America Inc
Product Status Obsolete Obsolete
Transistor Type N-Channel N-Channel
Frequency 900MHz 1.9GHz
Gain 23.5dB -
Voltage - Test 7.5 V 4.8 V
Current Rating (Amps) 600mA 1A
Noise Figure - -
Current - Test 40 mA 400 mA
Power - Output 32.2dB 32.5dBm
Voltage - Rated 30 V 20 V
Package / Case TO-243AA TO-243AA
Supplier Device Package 3-PowerMiniMold SOT-89

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BSS83,215
BSS83,215
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT-143B
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
MMBF4416
MMBF4416
onsemi
RF MOSFET N-CH JFET 15V SOT23-3

Related Product By Brand

NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
PS2801-1-F4-A
PS2801-1-F4-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-4
PS2801-4
CEL
OPTOISO 2.5KV 4CH TRANS 16-SSOP
PS2801-4-F3
PS2801-4-F3
CEL
OPTOISO 2.5KV 4CH TRANS 16-SSOP
PS2801-1-F3
PS2801-1-F3
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-1-F3-A
PS2801-1-F3-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-1-F3-Y-A
PS2801-1-F3-Y-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-1-Y-A
PS2801-1-Y-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-4-F4-A
PS2801-4-F4-A
CEL
OPTOISO 2.5KV 4CH TRANS 16-SSOP
PS2801-1-F3-L-A
PS2801-1-F3-L-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP
PS2801-1-F3-P-A
PS2801-1-F3-P-A
CEL
OPTOISOLATOR 2.5KV TRANS 4-SSOP