MRFE6VP100HR5
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NXP USA Inc. MRFE6VP100HR5

Manufacturer No:
MRFE6VP100HR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF MOSFET LDMOS 50V NI780-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP100HR5 is a high-power RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed by NXP Semiconductors. This device is optimized for both narrowband and broadband applications, particularly in the ISM (Industrial, Scientific, and Medical), broadcast, and aerospace sectors. It operates over a wide frequency range of 1.8 to 2000 MHz and is known for its high ruggedness and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +133 Vdc
Gate-Source Voltage VGS -6.0, +10 Vdc
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC -40 to +150 °C
Operating Junction Temperature TJ -40 to +225 °C
Continuous Output Power Pout 100 W CW
Operating Frequency Range f 1.8 to 2000 MHz

Key Features

  • Wide Operating Frequency Range: The MRFE6VP100HR5 operates from 1.8 to 2000 MHz, making it versatile for various applications.
  • High Ruggedness: Designed to withstand harsh operating conditions, ensuring reliability in demanding environments.
  • Broadband Capability: Capable of very broadband operation, making it suitable for both narrowband and broadband applications.
  • Integrated Stability Enhancements: Features integrated stability enhancements to ensure stable operation across the frequency range.
  • Low Thermal Resistance: Optimized for low thermal resistance, which helps in managing heat effectively.
  • Integrated ESD Protection Circuitry: Includes built-in ESD protection to safeguard against electrostatic discharge.
  • In Tape and Reel: Available in tape and reel packaging for convenient handling and storage.

Applications

  • ISM (Industrial, Scientific, and Medical) Applications: Suitable for various ISM applications due to its wide frequency range and high power handling.
  • Broadcast Applications: Used in broadcast systems where high power and reliability are crucial.
  • Aerospace Applications: Designed for use in aerospace systems where ruggedness and stability are essential.

Q & A

  1. What is the operating frequency range of the MRFE6VP100HR5?

    The MRFE6VP100HR5 operates from 1.8 to 2000 MHz.

  2. What is the maximum continuous output power of the MRFE6VP100HR5?

    The maximum continuous output power is 100 W CW.

  3. What are the key features of the MRFE6VP100HR5?

    Key features include wide operating frequency range, high ruggedness, broadband capability, integrated stability enhancements, low thermal resistance, and integrated ESD protection circuitry.

  4. What are the typical applications of the MRFE6VP100HR5?

    Typical applications include ISM, broadcast, and aerospace sectors.

  5. What is the storage temperature range for the MRFE6VP100HR5?

    The storage temperature range is -65 to +150 °C.

  6. What is the case operating temperature range for the MRFE6VP100HR5?

    The case operating temperature range is -40 to +150 °C.

  7. Does the MRFE6VP100HR5 have built-in ESD protection?

    Yes, it includes integrated ESD protection circuitry.

  8. What is the maximum drain-source voltage for the MRFE6VP100HR5?

    The maximum drain-source voltage is +133 Vdc.

  9. What is the maximum gate-source voltage for the MRFE6VP100HR5?

    The maximum gate-source voltage is +10 Vdc.

  10. Is the MRFE6VP100HR5 available in tape and reel packaging?

    Yes, it is available in tape and reel packaging.

Product Attributes

Transistor Type:LDMOS
Frequency:512MHz
Gain:26dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:100W
Voltage - Rated:133 V
Package / Case:NI-780-4
Supplier Device Package:NI-780-4
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$174.84
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Similar Products

Part Number MRFE6VP100HR5 MRFE6VP100HSR5
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 512MHz 512MHz
Gain 26dB 26dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 100W 100W
Voltage - Rated 133 V 133 V
Package / Case NI-780-4 NI-780S-4L
Supplier Device Package NI-780-4 NI-780S-4L

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