MRFE6VS25LR5
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NXP USA Inc. MRFE6VS25LR5

Manufacturer No:
MRFE6VS25LR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 133V 512MHZ NI360L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VS25LR5 is a high-performance RF power transistor manufactured by NXP USA Inc. This device is designed for use in RF power amplifiers, particularly in applications requiring high power and efficiency. It is part of NXP's portfolio of RF power transistors known for their reliability and performance in demanding radio frequency environments.

Key Specifications

ParameterValueUnit
Drain--Source Voltage (VDSS)0.5, +133Vdc
Frequency RangeUp to 512 MHz
Package TypeTape & Reel (TR)
Product StatusActive

Key Features

  • High power handling capability, making it suitable for high-power RF amplifiers.
  • Operates up to 512 MHz, catering to various RF applications.
  • High efficiency, which is crucial for minimizing heat and maximizing performance.
  • Robust construction and reliable operation in demanding RF environments.

Applications

The MRFE6VS25LR5 is primarily used in RF power amplifiers for various applications, including:

  • Wireless communication systems (e.g., cellular base stations, wireless local area networks).
  • Broadcasting equipment (e.g., FM and TV transmitters).
  • Industrial and medical RF generators.
  • Military communication systems.

Q & A

  1. What is the maximum drain-source voltage of the MRFE6VS25LR5?
    The maximum drain-source voltage (VDSS) is 0.5, +133 Vdc.
  2. What is the frequency range of the MRFE6VS25LR5?
    The device operates up to 512 MHz.
  3. What is the package type of the MRFE6VS25LR5?
    The package type is Tape & Reel (TR).
  4. What is the product status of the MRFE6VS25LR5?
    The product status is Active.
  5. What are the primary applications of the MRFE6VS25LR5?
    The primary applications include wireless communication systems, broadcasting equipment, industrial and medical RF generators, and military communication systems.
  6. Who manufactures the MRFE6VS25LR5?
    The MRFE6VS25LR5 is manufactured by NXP USA Inc..
  7. What type of device is the MRFE6VS25LR5?
    The MRFE6VS25LR5 is an RF power transistor.
  8. Why is high efficiency important in the MRFE6VS25LR5?
    High efficiency is important because it minimizes heat generation and maximizes performance in RF power amplifiers.
  9. Where can I find detailed specifications for the MRFE6VS25LR5?
    Detailed specifications can be found on official NXP websites, Digi-Key, Mouser, and other authorized distributors' websites.
  10. Is the MRFE6VS25LR5 suitable for high-power RF amplifiers?
    Yes, the MRFE6VS25LR5 is designed for high-power RF amplifiers due to its high power handling capability.

Product Attributes

Transistor Type:LDMOS
Frequency:512MHz
Gain:25.9dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:10 mA
Power - Output:25W
Voltage - Rated:133 V
Package / Case:NI-360
Supplier Device Package:NI-360
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$94.62
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