BLL6H0514-25,112
  • Share:

Ampleon USA Inc. BLL6H0514-25,112

Manufacturer No:
BLL6H0514-25,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 100V 21DB SOT467C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLL6H0514-25,112 is a 25 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) driver transistor produced by Ampleon USA Inc. This transistor is specifically designed for pulsed applications within the frequency range of 0.5 GHz to 1.4 GHz. It is part of Ampleon's portfolio of high-performance RF power transistors, known for their robustness and efficiency in various RF applications.

Key Specifications

Parameter Value
Part Number BLL6H0514-25,112
Manufacturer Ampleon USA Inc.
Frequency Range 0.5 GHz to 1.4 GHz
Output Power 25 W
Gain 21 dB
Process LDMOS
Type RF Power Discrete Transistors

Key Features

  • Easy Power Control: The transistor offers easy power control, making it versatile for various pulsed applications.
  • Integrated ESD Protection: It includes integrated ESD (Electrostatic Discharge) protection, enhancing the device's reliability and durability.
  • High Efficiency: The BLL6H0514-25,112 is designed to operate with high efficiency, ensuring optimal performance in its specified frequency range.

Applications

The BLL6H0514-25,112 is suitable for a variety of applications, including:

  • Pulsed Radars: It is particularly useful in pulsed radar systems due to its frequency range and power handling capabilities.
  • Industrial, Scientific, and Medical (ISM) Systems: The transistor can be used in ISM systems that require reliable and efficient RF power.
  • Non-Cellular Communication: It is also applicable in non-cellular communication systems that operate within the specified frequency range.

Q & A

  1. What is the frequency range of the BLL6H0514-25,112 transistor?

    The frequency range is from 0.5 GHz to 1.4 GHz.

  2. What is the output power of the BLL6H0514-25,112 transistor?

    The output power is 25 W.

  3. What type of process is used in the BLL6H0514-25,112 transistor?

    The transistor uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  4. Does the BLL6H0514-25,112 have integrated ESD protection?
  5. What are some typical applications for the BLL6H0514-25,112 transistor?

    Typical applications include pulsed radars, ISM systems, and non-cellular communication systems.

  6. What is the gain of the BLL6H0514-25,112 transistor?

    The gain is 21 dB.

  7. Who is the manufacturer of the BLL6H0514-25,112 transistor?

    The manufacturer is Ampleon USA Inc.

  8. What is the part number of this transistor?

    The part number is BLL6H0514-25,112.

  9. Is the BLL6H0514-25,112 suitable for continuous wave (CW) applications?

    No, it is specifically designed for pulsed applications.

  10. Where can I find more detailed specifications for the BLL6H0514-25,112 transistor?

    You can find detailed specifications on the Ampleon website or through distributors like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS
Frequency:1.2GHz ~ 1.4GHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):2.5A
Noise Figure:- 
Current - Test:50 mA
Power - Output:25W
Voltage - Rated:100 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

$248.84
2

Please send RFQ , we will respond immediately.

Related Product By Categories

BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
MRFE6VP5300NR1
MRFE6VP5300NR1
NXP USA Inc.
FET RF 2CH 133V 230MHZ TO-270
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF7G22LS-200,118
BLF7G22LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLP7G22-10,135
BLP7G22-10,135
NXP USA Inc.
TRANSISTOR DRIVER LDMOS 12HVSON
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF178XR,112
BLF178XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G10LS-260PRN:1
BLF6G10LS-260PRN:1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A