PD57006S
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STMicroelectronics PD57006S

Manufacturer No:
PD57006S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 65V 945MHZ PWRSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PD57006S is a high-performance RF power transistor manufactured by STMicroelectronics. This device is part of the LDMOS (Lateral Double-Diffused MOSFET) family and is designed for high gain and broad band commercial and industrial applications. It operates in common source configuration and is particularly suited for frequencies up to 1 GHz, making it an ideal solution for various RF applications, including car mobile radio.

Key Specifications

Parameter Value Unit
Drain-source voltage (V(BR)DSS) 65 V
Gate-source voltage (VGS) ± 20 V
Drain current (ID) 1 A
Power dissipation (PDISS) @ TC = 70°C 20 W
Max. operating junction temperature (TJ) 165 °C
Storage temperature (TSTG) -65 to +150 °C
Junction-case thermal resistance (RthJC) 5 °C/W
Output power (POUT) @ 945 MHz / 28 V 6 W with 15 dB gain

Key Features

  • Excellent thermal stability: Ensures reliable operation under various thermal conditions.
  • Common source configuration: Optimized for high gain and broad band applications.
  • High power SMD package: The PowerSO-10RF package is the first ST JEDEC approved, high power SMD package, offering high reliability and ease of assembly.
  • Superior linearity performance: Ideal for applications requiring high linearity, such as car mobile radio.
  • Broad band capability: Operates at frequencies up to 1 GHz.

Applications

  • Car mobile radio: Due to its superior linearity performance, it is an ideal solution for car mobile radio applications.
  • Commercial and industrial RF applications: Suitable for a wide range of high gain and broad band applications.
  • RF power amplifiers: Used in various RF power amplifier designs requiring high output power and efficiency.

Q & A

  1. What is the PD57006S RF power transistor used for?

    The PD57006S is used for high gain and broad band commercial and industrial RF applications, including car mobile radio.

  2. What is the maximum drain-source voltage of the PD57006S?

    The maximum drain-source voltage (V(BR)DSS) is 65 V.

  3. What is the maximum operating junction temperature of the PD57006S?

    The maximum operating junction temperature (TJ) is 165 °C.

  4. What package type is the PD57006S available in?

    The PD57006S is available in the PowerSO-10RF package, which is a high power SMD package.

  5. What are the key features of the PowerSO-10RF package?

    The PowerSO-10RF package offers high reliability, excellent RF performance, and ease of assembly. It is the first ST JEDEC approved high power SMD package.

  6. What is the output power of the PD57006S at 945 MHz and 28 V?

    The output power (POUT) at 945 MHz and 28 V is 6 W with 15 dB gain.

  7. What are the typical applications of the PD57006S?

    Typical applications include car mobile radio, commercial and industrial RF applications, and RF power amplifiers.

  8. What is the thermal stability of the PD57006S?

    The PD57006S has excellent thermal stability, ensuring reliable operation under various thermal conditions.

  9. What is the maximum drain current of the PD57006S?

    The maximum drain current (ID) is 1 A.

  10. What is the storage temperature range for the PD57006S?

    The storage temperature range (TSTG) is -65 to +150 °C.

Product Attributes

Transistor Type:LDMOS
Frequency:945MHz
Gain:15dB
Voltage - Test:28 V
Current Rating (Amps):1A
Noise Figure:- 
Current - Test:70 mA
Power - Output:6W
Voltage - Rated:65 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
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