PD57006S
  • Share:

STMicroelectronics PD57006S

Manufacturer No:
PD57006S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 65V 945MHZ PWRSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD57006S is a high-performance RF power transistor manufactured by STMicroelectronics. This device is part of the LDMOS (Lateral Double-Diffused MOSFET) family and is designed for high gain and broad band commercial and industrial applications. It operates in common source configuration and is particularly suited for frequencies up to 1 GHz, making it an ideal solution for various RF applications, including car mobile radio.

Key Specifications

Parameter Value Unit
Drain-source voltage (V(BR)DSS) 65 V
Gate-source voltage (VGS) ± 20 V
Drain current (ID) 1 A
Power dissipation (PDISS) @ TC = 70°C 20 W
Max. operating junction temperature (TJ) 165 °C
Storage temperature (TSTG) -65 to +150 °C
Junction-case thermal resistance (RthJC) 5 °C/W
Output power (POUT) @ 945 MHz / 28 V 6 W with 15 dB gain

Key Features

  • Excellent thermal stability: Ensures reliable operation under various thermal conditions.
  • Common source configuration: Optimized for high gain and broad band applications.
  • High power SMD package: The PowerSO-10RF package is the first ST JEDEC approved, high power SMD package, offering high reliability and ease of assembly.
  • Superior linearity performance: Ideal for applications requiring high linearity, such as car mobile radio.
  • Broad band capability: Operates at frequencies up to 1 GHz.

Applications

  • Car mobile radio: Due to its superior linearity performance, it is an ideal solution for car mobile radio applications.
  • Commercial and industrial RF applications: Suitable for a wide range of high gain and broad band applications.
  • RF power amplifiers: Used in various RF power amplifier designs requiring high output power and efficiency.

Q & A

  1. What is the PD57006S RF power transistor used for?

    The PD57006S is used for high gain and broad band commercial and industrial RF applications, including car mobile radio.

  2. What is the maximum drain-source voltage of the PD57006S?

    The maximum drain-source voltage (V(BR)DSS) is 65 V.

  3. What is the maximum operating junction temperature of the PD57006S?

    The maximum operating junction temperature (TJ) is 165 °C.

  4. What package type is the PD57006S available in?

    The PD57006S is available in the PowerSO-10RF package, which is a high power SMD package.

  5. What are the key features of the PowerSO-10RF package?

    The PowerSO-10RF package offers high reliability, excellent RF performance, and ease of assembly. It is the first ST JEDEC approved high power SMD package.

  6. What is the output power of the PD57006S at 945 MHz and 28 V?

    The output power (POUT) at 945 MHz and 28 V is 6 W with 15 dB gain.

  7. What are the typical applications of the PD57006S?

    Typical applications include car mobile radio, commercial and industrial RF applications, and RF power amplifiers.

  8. What is the thermal stability of the PD57006S?

    The PD57006S has excellent thermal stability, ensuring reliable operation under various thermal conditions.

  9. What is the maximum drain current of the PD57006S?

    The maximum drain current (ID) is 1 A.

  10. What is the storage temperature range for the PD57006S?

    The storage temperature range (TSTG) is -65 to +150 °C.

Product Attributes

Transistor Type:LDMOS
Frequency:945MHz
Gain:15dB
Voltage - Test:28 V
Current Rating (Amps):1A
Noise Figure:- 
Current - Test:70 mA
Power - Output:6W
Voltage - Rated:65 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

-
370

Please send RFQ , we will respond immediately.

Related Product By Categories

AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BF909R,235
BF909R,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK