Overview
The MMRF1004GNR1 is a high-performance RF power field-effect transistor (FET) produced by NXP USA Inc. This device is designed for Class A or Class AB general-purpose applications, particularly in the frequency range of 1600 to 2200 MHz. It is suitable for both analog and digital modulation, making it versatile for various wireless communication systems.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature | TC | 150 | °C |
| Operating Junction Temperature | TJ | 225 | °C |
| Thermal Resistance, Junction to Case | RθJC | 2.3, 2.9 | °C/W |
| Power Gain | Gps | 14 to 17 | dB |
| Drain Efficiency | ηD | 33 to 36 | % |
| Input Return Loss | IRL | -15 to -9 | dB |
Key Features
- Internally matched for ease of use.
- Qualified up to a maximum of 32 VDD operation.
- Integrated ESD protection.
- 225°C capable plastic package.
- Available in tape and reel packaging (R1 suffix = 500 units, 24 mm tape width, 13-inch reel).
Applications
The MMRF1004GNR1 is designed for various wireless communication systems, including GSM, GSM EDGE, single and dual-band W-CDMA, and N-CDMA. It is particularly suited for applications requiring high power and efficiency in the frequency range of 1600 to 2200 MHz.
Q & A
- What is the frequency range of the MMRF1004GNR1?
The MMRF1004GNR1 operates in the frequency range of 1600 to 2200 MHz. - What are the typical applications of the MMRF1004GNR1?
The device is used in GSM, GSM EDGE, single and dual-band W-CDMA, and N-CDMA systems. - What is the maximum drain-source voltage for the MMRF1004GNR1?
The maximum drain-source voltage is +68 Vdc. - Does the MMRF1004GNR1 have integrated ESD protection?
Yes, the MMRF1004GNR1 has integrated ESD protection. - What is the operating junction temperature of the MMRF1004GNR1?
The operating junction temperature is up to 225°C. - What is the thermal resistance, junction to case, for the MMRF1004GNR1?
The thermal resistance, junction to case, is 2.3 to 2.9 °C/W. - What is the power gain of the MMRF1004GNR1?
The power gain is typically between 14 to 17 dB. - What is the drain efficiency of the MMRF1004GNR1?
The drain efficiency is typically between 33 to 36%. - Is the MMRF1004GNR1 internally matched?
Yes, the MMRF1004GNR1 is internally matched for ease of use. - What type of packaging is available for the MMRF1004GNR1?
The device is available in tape and reel packaging.
