BLF6G27LS-75,118
  • Share:

Ampleon USA Inc. BLF6G27LS-75,118

Manufacturer No:
BLF6G27LS-75,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-75,118 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in RF power amplifiers, particularly in the frequency range of 2.5 to 2.7 GHz. It is part of Ampleon's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, known for its high efficiency and reliability in various RF applications.

Key Specifications

ParameterValue
Frequency Range2.5 to 2.7 GHz
Output Power75 W
Gain17 dB
Drain-Source Voltage (Vds)28 V
TechnologyLDMOS
Package TypeSOT-502B

Key Features

  • High output power of 75 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 2.5 to 2.7 GHz, ideal for various wireless communication systems.
  • High gain of 17 dB, enhancing signal strength and quality.
  • LDMOS technology ensures high efficiency and reliability.
  • Compact SOT-502B package, facilitating easy integration into RF circuits.

Applications

The BLF6G27LS-75,118 is widely used in various RF power amplifier applications, including:

  • Wireless communication systems such as base stations and repeaters.
  • Broadcasting equipment like TV and radio transmitters.
  • Radar systems requiring high-power RF signals.
  • Industrial, scientific, and medical (ISM) applications.

Q & A

  1. What is the frequency range of the BLF6G27LS-75,118?
    The frequency range is 2.5 to 2.7 GHz.
  2. What is the output power of the BLF6G27LS-75,118?
    The output power is 75 W.
  3. What is the gain of the BLF6G27LS-75,118?
    The gain is 17 dB.
  4. What is the drain-source voltage (Vds) of the BLF6G27LS-75,118?
    The drain-source voltage is 28 V.
  5. What technology is used in the BLF6G27LS-75,118?
    The technology used is LDMOS.
  6. What is the package type of the BLF6G27LS-75,118?
    The package type is SOT-502B.
  7. What are the typical applications of the BLF6G27LS-75,118?
    Typical applications include wireless communication systems, broadcasting equipment, radar systems, and ISM applications.
  8. Why is LDMOS technology important in RF power transistors?
    LDMOS technology is important because it offers high efficiency and reliability in RF power amplifiers.
  9. How does the BLF6G27LS-75,118 contribute to high-power RF applications?
    The BLF6G27LS-75,118 contributes by providing high output power and high gain, which are crucial for high-power RF applications.
  10. What are the benefits of using the BLF6G27LS-75,118 in RF circuits?
    The benefits include high efficiency, reliability, and compact packaging, making it easier to integrate into RF circuits.

Product Attributes

Transistor Type:LDMOS
Frequency:- 
Gain:- 
Voltage - Test:28 V
Current Rating (Amps):18A
Noise Figure:- 
Current - Test:600 mA
Power - Output:9W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

-
346

Please send RFQ , we will respond immediately.

Same Series
BLF6G27-75,112
BLF6G27-75,112
RF TRANSISTOR
BLF6G27LS-75,118
BLF6G27LS-75,118
RF FET LDMOS 65V SOT502B

Similar Products

Part Number BLF6G27LS-75,118 BLF6G20LS-75,118 BLF6G22LS-75,118 BLF6G27LS-75,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency - 1.93GHz ~ 1.99GHz 2.11GHz ~ 2.17GHz -
Gain - 19dB 18.7dB -
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) 18A 18A 18A 18A
Noise Figure - - - -
Current - Test 600 mA 550 mA 690 mA 600 mA
Power - Output 9W 29.5W 17W 9W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B SOT502B

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B

Related Product By Brand

LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B