PD55003S
  • Share:

STMicroelectronics PD55003S

Manufacturer No:
PD55003S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 500MHZ PWRSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. It is part of the LDMOS technology family and is mounted in the PowerSO-10RF, the first true SMD plastic RF power package. This transistor is optimized for high gain, broad band commercial and industrial applications, operating at 12 V in common source mode at frequencies up to 1 GHz. It boasts excellent gain, linearity, and reliability, making it an ideal solution for car mobile radios and other high-performance RF applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (V(BR)DSS)40V
Gate-source voltage (VGS)± 20V
Drain current (ID)2.5A
Power dissipation (PDISS) @ TC = 70°C31.7W
Max. operating junction temperature (TJ)165°C
Storage temperature (TSTG)-65 to +150°C
Junction-case thermal resistance (RthJC)3.0°C/W
Output Power (POUT) @ 500 MHz / 12.5 V3 WW
Gain @ 500 MHz / 12.5 V17 dBdB

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance
  • Operates up to 1 GHz frequency
  • Mounted in the PowerSO-10RF SMD plastic package for high reliability and ease of assembly
  • Superior linearity performance, ideal for car mobile radios

Applications

The PD55003-E is designed for high gain, broad band commercial and industrial applications. It is particularly suited for car mobile radios due to its superior linearity performance. Other potential applications include various RF power amplification needs in communication systems and industrial equipment.

Q & A

  1. What is the PD55003-E RF power transistor? The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics.
  2. What is the operating frequency range of the PD55003-E? It operates at frequencies up to 1 GHz.
  3. What is the typical output power of the PD55003-E at 500 MHz? The output power is 3 W with 17 dB gain at 500 MHz / 12.5 V.
  4. What package type is the PD55003-E available in? It is available in the PowerSO-10RF SMD plastic package.
  5. What are the key features of the PD55003-E? Excellent thermal stability, common source configuration, high gain, and broad band performance.
  6. What are the typical applications of the PD55003-E? Car mobile radios, commercial and industrial RF power amplification.
  7. What is the maximum operating junction temperature of the PD55003-E? 165°C.
  8. What is the storage temperature range for the PD55003-E? -65 to +150°C.
  9. How is the thermal performance of the PD55003-E? It has a junction-case thermal resistance of 3.0°C/W.
  10. Where can I find mounting recommendations for the PD55003-E? Mounting recommendations are provided in application note AN1294, available on www.st.com.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):2.5A
Noise Figure:- 
Current - Test:50 mA
Power - Output:3W
Voltage - Rated:40 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
PD55003S
PD55003S
FET RF 40V 500MHZ PWRSO-10

Related Product By Categories

MRFE6S9060NR1
MRFE6S9060NR1
NXP USA Inc.
FET RF 66V 880MHZ TO270-2
AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF6G38S-25,112
BLF6G38S-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
A2V09H525-04NR6
A2V09H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BF998WR,115
BF998WR,115
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT343R
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
A2I25H060NR1
A2I25H060NR1
NXP USA Inc.
IC RF LDMOS AMP

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK