PD55003S
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STMicroelectronics PD55003S

Manufacturer No:
PD55003S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 500MHZ PWRSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. It is part of the LDMOS technology family and is mounted in the PowerSO-10RF, the first true SMD plastic RF power package. This transistor is optimized for high gain, broad band commercial and industrial applications, operating at 12 V in common source mode at frequencies up to 1 GHz. It boasts excellent gain, linearity, and reliability, making it an ideal solution for car mobile radios and other high-performance RF applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (V(BR)DSS)40V
Gate-source voltage (VGS)± 20V
Drain current (ID)2.5A
Power dissipation (PDISS) @ TC = 70°C31.7W
Max. operating junction temperature (TJ)165°C
Storage temperature (TSTG)-65 to +150°C
Junction-case thermal resistance (RthJC)3.0°C/W
Output Power (POUT) @ 500 MHz / 12.5 V3 WW
Gain @ 500 MHz / 12.5 V17 dBdB

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance
  • Operates up to 1 GHz frequency
  • Mounted in the PowerSO-10RF SMD plastic package for high reliability and ease of assembly
  • Superior linearity performance, ideal for car mobile radios

Applications

The PD55003-E is designed for high gain, broad band commercial and industrial applications. It is particularly suited for car mobile radios due to its superior linearity performance. Other potential applications include various RF power amplification needs in communication systems and industrial equipment.

Q & A

  1. What is the PD55003-E RF power transistor? The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics.
  2. What is the operating frequency range of the PD55003-E? It operates at frequencies up to 1 GHz.
  3. What is the typical output power of the PD55003-E at 500 MHz? The output power is 3 W with 17 dB gain at 500 MHz / 12.5 V.
  4. What package type is the PD55003-E available in? It is available in the PowerSO-10RF SMD plastic package.
  5. What are the key features of the PD55003-E? Excellent thermal stability, common source configuration, high gain, and broad band performance.
  6. What are the typical applications of the PD55003-E? Car mobile radios, commercial and industrial RF power amplification.
  7. What is the maximum operating junction temperature of the PD55003-E? 165°C.
  8. What is the storage temperature range for the PD55003-E? -65 to +150°C.
  9. How is the thermal performance of the PD55003-E? It has a junction-case thermal resistance of 3.0°C/W.
  10. Where can I find mounting recommendations for the PD55003-E? Mounting recommendations are provided in application note AN1294, available on www.st.com.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):2.5A
Noise Figure:- 
Current - Test:50 mA
Power - Output:3W
Voltage - Rated:40 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
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Same Series
PD55003S
PD55003S
FET RF 40V 500MHZ PWRSO-10

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