PD55003S
  • Share:

STMicroelectronics PD55003S

Manufacturer No:
PD55003S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 500MHZ PWRSO-10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. It is part of the LDMOS technology family and is mounted in the PowerSO-10RF, the first true SMD plastic RF power package. This transistor is optimized for high gain, broad band commercial and industrial applications, operating at 12 V in common source mode at frequencies up to 1 GHz. It boasts excellent gain, linearity, and reliability, making it an ideal solution for car mobile radios and other high-performance RF applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (V(BR)DSS)40V
Gate-source voltage (VGS)± 20V
Drain current (ID)2.5A
Power dissipation (PDISS) @ TC = 70°C31.7W
Max. operating junction temperature (TJ)165°C
Storage temperature (TSTG)-65 to +150°C
Junction-case thermal resistance (RthJC)3.0°C/W
Output Power (POUT) @ 500 MHz / 12.5 V3 WW
Gain @ 500 MHz / 12.5 V17 dBdB

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High gain and broad band performance
  • Operates up to 1 GHz frequency
  • Mounted in the PowerSO-10RF SMD plastic package for high reliability and ease of assembly
  • Superior linearity performance, ideal for car mobile radios

Applications

The PD55003-E is designed for high gain, broad band commercial and industrial applications. It is particularly suited for car mobile radios due to its superior linearity performance. Other potential applications include various RF power amplification needs in communication systems and industrial equipment.

Q & A

  1. What is the PD55003-E RF power transistor? The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics.
  2. What is the operating frequency range of the PD55003-E? It operates at frequencies up to 1 GHz.
  3. What is the typical output power of the PD55003-E at 500 MHz? The output power is 3 W with 17 dB gain at 500 MHz / 12.5 V.
  4. What package type is the PD55003-E available in? It is available in the PowerSO-10RF SMD plastic package.
  5. What are the key features of the PD55003-E? Excellent thermal stability, common source configuration, high gain, and broad band performance.
  6. What are the typical applications of the PD55003-E? Car mobile radios, commercial and industrial RF power amplification.
  7. What is the maximum operating junction temperature of the PD55003-E? 165°C.
  8. What is the storage temperature range for the PD55003-E? -65 to +150°C.
  9. How is the thermal performance of the PD55003-E? It has a junction-case thermal resistance of 3.0°C/W.
  10. Where can I find mounting recommendations for the PD55003-E? Mounting recommendations are provided in application note AN1294, available on www.st.com.

Product Attributes

Transistor Type:LDMOS
Frequency:500MHz
Gain:17dB
Voltage - Test:12.5 V
Current Rating (Amps):2.5A
Noise Figure:- 
Current - Test:50 mA
Power - Output:3W
Voltage - Rated:40 V
Package / Case:PowerSO-10 Exposed Bottom Pad
Supplier Device Package:10-PowerSO
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
PD55003S
PD55003S
FET RF 40V 500MHZ PWRSO-10

Related Product By Categories

AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
A2V09H525-04NR6
A2V09H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF998WR,115
BF998WR,115
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT343R
BF908,215
BF908,215
NXP USA Inc.
MOSFET N-CH 12V 40MA SOT143B
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA