Overview
The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. It is part of the LDMOS technology family and is optimized for high gain, broad band commercial and industrial applications. The transistor operates at 12 V in common source mode at frequencies up to 1 GHz, making it suitable for a wide range of RF applications. The PD55003-E boasts excellent gain, linearity, and reliability, thanks to ST’s latest LDMOS technology mounted in the PowerSO-10RF plastic package, which is the first JEDEC-approved, high power SMD package from ST.
The PowerSO-10RF package is designed for high reliability and offers excellent RF performance and ease of assembly. The transistor’s superior linearity performance makes it an ideal solution for car mobile radios and other high-frequency applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Breakdown Voltage (V(BR)DSS) | 40 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) | 2.5 | A |
| Power Dissipation (PDISS) @ TC = 70°C | 31.7 | W |
| Maximum Operating Junction Temperature (TJ) | 165 | °C |
| Storage Temperature (TSTG) | -65 to +150 | °C |
| Operating Supply Voltage | 12.5 | V |
| Output Power (POUT) | 3 | W |
| Gain @ 500 MHz / 12.5 V | 17 dB | |
| Maximum Frequency | 1 GHz | |
| Package Type | PowerSO-10RF | |
| Number of Pins | 3 | |
| Mounting Type | Surface Mount | |
| Dimensions | Height: 3.5 mm, Length: 7.5 mm, Width: 9.4 mm |
Key Features
- Excellent thermal stability
- Common source configuration
- High gain and linearity performance
- Operates at 12 V in common source mode up to 1 GHz
- Output power of 3 W with 17 dB gain @ 500 MHz / 12.5 V
- PowerSO-10RF plastic package for high reliability and ease of assembly
- JEDEC-approved, high power SMD package
- Optimized for RF requirements
- Efficiency of 52%
Applications
The PD55003-E is particularly suited for high-frequency applications, including:
- Car mobile radios due to its superior linearity performance
- Broad band commercial and industrial applications
- RF power amplifiers in various communication systems
- High-gain and high-reliability RF circuits
Q & A
- What is the part number of the product?
The part number of the product is PD55003-E.
- What is the frequency range of the RF power transistor?
The frequency range of the RF power transistor is up to 1 GHz.
- What is the power rating of the transistor?
The output power rating of the transistor is 3 W.
- What is the package type of the transistor?
The package type of the transistor is PowerSO-10RF.
- What is the maximum operating temperature of the product?
The maximum operating temperature is 165 °C.
- What is the gain of the transistor at 500 MHz / 12.5 V?
The gain of the transistor at 500 MHz / 12.5 V is 17 dB.
- What is the drain to source breakdown voltage?
The drain to source breakdown voltage is 40 V.
- What is the gate to source voltage range?
The gate to source voltage range is ±20 V.
- What are the dimensions of the PowerSO-10RF package?
The dimensions are Height: 3.5 mm, Length: 7.5 mm, Width: 9.4 mm.
- Is the PowerSO-10RF package JEDEC-approved?
