Overview
The SCT10N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics, leveraging the advanced properties of wide bandgap materials. This device offers unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SCT10N120 is housed in the proprietary HiP247™ package, which provides an industry-standard outline with significantly improved thermal capability. This makes the device ideal for high-efficiency and high power density applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 1200 | V |
| Gate-Source Voltage (Vgs) | -10 to 25 | V |
| Continuous Drain Current (Id) @ 25°C | 12 | A |
| On-Resistance (Rds(on)) @ Id, Vgs | 690 mΩ @ 6A, 20V | mΩ |
| Threshold Voltage (Vgs(th)) @ Id | 3.5V @ 250µA | V |
| Gate Charge (Qg) @ Vgs | 22nC @ 20V | nC |
| Input Capacitance (Ciss) @ Vds | 290pF @ 400V | pF |
| Operating Junction Temperature (TJ) | -55°C to 200°C | °C |
| Power Dissipation (Max) | 150W (Tc) | W |
| Package | HiP247™ |
Key Features
- Very tight variation of on-resistance vs. temperature
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Solar inverters
- UPS (Uninterruptible Power Supplies)
- Motor drives
- High voltage DC-DC converters
- Switch mode power supplies
Q & A
- What is the drain-source voltage rating of the SCT10N120?
The drain-source voltage (Vds) rating is 1200 V.
- What is the continuous drain current rating of the SCT10N120 at 25°C?
The continuous drain current (Id) rating at 25°C is 12 A.
- What is the on-resistance of the SCT10N120?
The on-resistance (Rds(on)) is 690 mΩ at 6 A and 20 V gate-source voltage.
- What is the operating junction temperature range of the SCT10N120?
The operating junction temperature (TJ) range is -55°C to 200°C.
- What package is the SCT10N120 housed in?
The SCT10N120 is housed in the proprietary HiP247™ package.
- What are some of the key features of the SCT10N120?
The key features include very tight variation of on-resistance vs. temperature, very high operating junction temperature capability, a very fast and robust intrinsic body diode, and low capacitance.
- What applications is the SCT10N120 suitable for?
The SCT10N120 is suitable for solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.
- Is the SCT10N120 RoHS compliant?
- What is the gate charge of the SCT10N120?
The gate charge (Qg) is 22 nC at 20 V gate-source voltage.
- What is the input capacitance of the SCT10N120?
The input capacitance (Ciss) is 290 pF at 400 V drain-source voltage.
