Overview
The SCT30N120H is a Silicon Carbide (SiC) N-Channel Power MOSFET produced by STMicroelectronics. This component is part of ST’s STPOWER SiC MOSFET family, known for its advanced and innovative properties utilizing wide bandgap materials. The SCT30N120H is designed to offer high efficiency, low resistance, and excellent switching performance, making it ideal for various high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Channel Type | N-Channel |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | H2PAK-2 (also available in HiP247) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance (RDS(on)) | 0.09 Ω (typ. at TJ = 150°C) |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5 V |
| Transistor Material | Silicon Carbide (SiC) |
| Country of Origin | China |
Key Features
- Low RDS(on) of 0.09 Ω, ensuring high efficiency and low power losses.
- High voltage rating of 1200 V, suitable for high-power applications.
- Maximum continuous drain current of 45 A, supporting robust current handling.
- Enhancement mode operation for easy control and integration.
- High temperature rating of up to 200°C, enhancing thermal design flexibility.
- Galvanic isolation compatibility with gate drivers like STGAP2SICS for secure and reliable operation.
Applications
- High-efficiency DC charging stations for electric vehicles.
- Power conversion and motor driver inverters in industrial applications.
- Three-phase Vienna rectifiers and totem pole PFC designs.
- High-power density power electronics systems requiring low RDS(on) and high switching performance.
Q & A
- What is the maximum continuous drain current of the SCT30N120H?
The maximum continuous drain current is 45 A. - What is the maximum drain source voltage of the SCT30N120H?
The maximum drain source voltage is 1200 V. - What package types are available for the SCT30N120H?
The SCT30N120H is available in H2PAK-2 and HiP247 packages. - What is the typical RDS(on) of the SCT30N120H at TJ = 150°C?
The typical RDS(on) is 0.09 Ω. - What is the maximum gate threshold voltage of the SCT30N120H?
The maximum gate threshold voltage is 3.5 V. - What is the transistor material used in the SCT30N120H?
The transistor material is Silicon Carbide (SiC). - What is the maximum operating temperature of the SCT30N120H?
The maximum operating temperature is up to 200°C. - What are some typical applications of the SCT30N120H?
Typical applications include high-efficiency DC charging stations, power conversion, and motor driver inverters. - Is the SCT30N120H compatible with galvanic isolation gate drivers?
Yes, it is compatible with gate drivers like STGAP2SICS. - Where can I find more detailed specifications and datasheets for the SCT30N120H?
You can find detailed specifications and datasheets on the official STMicroelectronics website, as well as on distributor sites like RS Components and Avnet).
