SCT30N120H
  • Share:

STMicroelectronics SCT30N120H

Manufacturer No:
SCT30N120H
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SICFET N-CH 1200V 40A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCT30N120H is a Silicon Carbide (SiC) N-Channel Power MOSFET produced by STMicroelectronics. This component is part of ST’s STPOWER SiC MOSFET family, known for its advanced and innovative properties utilizing wide bandgap materials. The SCT30N120H is designed to offer high efficiency, low resistance, and excellent switching performance, making it ideal for various high-power applications.

Key Specifications

ParameterValue
BrandSTMicroelectronics
Channel TypeN-Channel
Maximum Continuous Drain Current45 A
Maximum Drain Source Voltage1200 V
Package TypeH2PAK-2 (also available in HiP247)
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance (RDS(on))0.09 Ω (typ. at TJ = 150°C)
Channel ModeEnhancement
Maximum Gate Threshold Voltage3.5 V
Transistor MaterialSilicon Carbide (SiC)
Country of OriginChina

Key Features

  • Low RDS(on) of 0.09 Ω, ensuring high efficiency and low power losses.
  • High voltage rating of 1200 V, suitable for high-power applications.
  • Maximum continuous drain current of 45 A, supporting robust current handling.
  • Enhancement mode operation for easy control and integration.
  • High temperature rating of up to 200°C, enhancing thermal design flexibility.
  • Galvanic isolation compatibility with gate drivers like STGAP2SICS for secure and reliable operation.

Applications

  • High-efficiency DC charging stations for electric vehicles.
  • Power conversion and motor driver inverters in industrial applications.
  • Three-phase Vienna rectifiers and totem pole PFC designs.
  • High-power density power electronics systems requiring low RDS(on) and high switching performance.

Q & A

  1. What is the maximum continuous drain current of the SCT30N120H?
    The maximum continuous drain current is 45 A.
  2. What is the maximum drain source voltage of the SCT30N120H?
    The maximum drain source voltage is 1200 V.
  3. What package types are available for the SCT30N120H?
    The SCT30N120H is available in H2PAK-2 and HiP247 packages.
  4. What is the typical RDS(on) of the SCT30N120H at TJ = 150°C?
    The typical RDS(on) is 0.09 Ω.
  5. What is the maximum gate threshold voltage of the SCT30N120H?
    The maximum gate threshold voltage is 3.5 V.
  6. What is the transistor material used in the SCT30N120H?
    The transistor material is Silicon Carbide (SiC).
  7. What is the maximum operating temperature of the SCT30N120H?
    The maximum operating temperature is up to 200°C.
  8. What are some typical applications of the SCT30N120H?
    Typical applications include high-efficiency DC charging stations, power conversion, and motor driver inverters.
  9. Is the SCT30N120H compatible with galvanic isolation gate drivers?
    Yes, it is compatible with gate drivers like STGAP2SICS.
  10. Where can I find more detailed specifications and datasheets for the SCT30N120H?
    You can find detailed specifications and datasheets on the official STMicroelectronics website, as well as on distributor sites like RS Components and Avnet).

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$24.03
37

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number SCT30N120H SCT10N120H SCT20N120H SCT30N120
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 12A (Tc) 20A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V 690mOhm @ 6A, 20V 290mOhm @ 10A, 20V 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 250µA 3.5V @ 1mA 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V 22 nC @ 20 V 45 nC @ 20 V 105 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V 290 pF @ 400 V 650 pF @ 400 V 1700 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 270W (Tc) 150W (Tc) 175W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package H2Pak-2 H2Pak-2 H2Pak-2 HiP247™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN