Overview
The STF13NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for high-efficiency converters and demanding switching applications. The MOSFET is available in a TO-220FP package and is known for its low input capacitance, low gate charge, and low gate input resistance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 600 | V |
| VGS (Gate-source voltage) | ±25 | V |
| ID (Drain current, continuous) at TC = 25 °C | 11 | A |
| ID (Drain current, continuous) at TC = 100 °C | 6.9 | A |
| IDM (Drain current, pulsed) | 44 | A |
| PTOT (Total power dissipation) at TC = 25 °C | 25 | W |
| RDS(on) (Static drain-source on-resistance) at VGS = 10 V, ID = 5.5 A | 280 - 360 | mΩ |
| TJ (Operating junction temperature range) | -55 to 150 | °C |
| RthJC (Thermal resistance, junction-to-case) | 5 | °C/W |
| RthJA (Thermal resistance, junction-to-ambient) | 62.5 | °C/W |
| Qg (Total gate charge) | 27 | nC |
| Ciss (Input capacitance) | 790 | pF |
| Coss (Output capacitance) | 60 | pF |
| td(on) (Turn-on delay time) | 3 | ns |
| tr (Rise time) | 8 | ns |
| td(off) (Turn-off delay time) | 30 | ns |
| tf (Fall time) | 10 | ns |
Key Features
- Low input capacitance and gate charge, enhancing switching efficiency.
- Low gate input resistance, reducing switching losses.
- High drain-source breakdown voltage (VDS) of 600 V.
- High continuous drain current (ID) of 11 A at TC = 25 °C.
- Low static drain-source on-resistance (RDS(on)) of 280 - 360 mΩ.
- 100% avalanche tested, ensuring robustness under transient conditions.
- Available in TO-220FP package, suitable for various high-power applications.
- ECOPACK compliant, meeting environmental standards.
Applications
- High-efficiency power converters and switching applications.
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
- Industrial and automotive power systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF13NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 11 A.
- What is the typical on-resistance (RDS(on)) of the STF13NM60N?
The typical on-resistance (RDS(on)) is 280 mΩ at VGS = 10 V and ID = 5.5 A.
- What is the total gate charge (Qg) of the STF13NM60N?
The total gate charge (Qg) is 27 nC.
- What are the thermal resistance values for junction-to-case (RthJC) and junction-to-ambient (RthJA)?
The thermal resistance for junction-to-case (RthJC) is 5 °C/W, and for junction-to-ambient (RthJA) is 62.5 °C/W.
- What is the maximum operating junction temperature (TJ) of the STF13NM60N?
The maximum operating junction temperature (TJ) is 150 °C.
- What are the typical turn-on and turn-off times for the STF13NM60N?
The typical turn-on delay time (td(on)) is 3 ns, and the typical turn-off delay time (td(off)) is 30 ns.
- What are the typical rise and fall times for the STF13NM60N?
The typical rise time (tr) is 8 ns, and the typical fall time (tf) is 10 ns.
- What package types are available for the STF13NM60N?
The STF13NM60N is available in the TO-220FP package.
- Is the STF13NM60N compliant with environmental standards?
Yes, the STF13NM60N is ECOPACK compliant, meeting environmental standards.
