Overview
The STD5NM60T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their revolutionary MDmesh technology. This technology combines the multiple drain process with the company's PowerMESH horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The device is packaged in a DPAK (TO-252) package and is designed for high-efficiency switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) max. (On-Resistance) | 1.0 | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 5 | A |
| ID (Drain Current, continuous at TC = 100 °C) | 3.1 | A |
| IDM (Drain Current, pulsed) | 20 | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 96 | W |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| TJ (Operating Junction Temperature Range) | - | °C |
| VGS (Gate-Source Voltage) | ±30 | V |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 600 | V |
| IGSS (Gate Body Leakage Current) | ±100 nA | A |
| VGS(th) (Gate Threshold Voltage) | 3 to 5 | V |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.3 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 50 | °C/W |
Key Features
- Extremely low on-resistance (RDS(on) = 1.0 Ω typ.)
- High dv/dt capability
- Excellent avalanche characteristics
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- MDmesh technology for superior dynamic performance
- DPAK (TO-252) package for efficient thermal management
Applications
The STD5NM60T4 is designed for various high-efficiency switching applications, including:
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial automation and control systems
- Renewable energy systems (e.g., solar and wind power)
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STD5NM60T4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STD5NM60T4?
The typical on-resistance (RDS(on)) is 1.0 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 5 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 20 A.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ±30 V.
- What are the thermal resistance values for junction-to-case (RthJC) and junction-to-ambient (RthJA)?
The thermal resistance for junction-to-case (RthJC) is 1.3 °C/W, and for junction-to-ambient (RthJA) it is 50 °C/W.
- What is the package type of the STD5NM60T4?
The package type is DPAK (TO-252).
- What technology is used in the STD5NM60T4?
The STD5NM60T4 uses STMicroelectronics' MDmesh technology.
- What are some typical applications for the STD5NM60T4?
Typical applications include power supplies, DC-DC converters, motor control, industrial automation, and renewable energy systems.
- Is the STD5NM60T4 100% avalanche tested?
