Overview
The STB8NM60T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the MDmesh™ technology family, which combines the multiple drain process with the company’s PowerMESH™ horizontal layout. This innovative technology results in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The STB8NM60T4 is particularly suited for demanding applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 600 | V |
| On-Resistance (RDS(on)) | 0.9 | Ω |
| Drain Current (ID) Continuous at TC = 25°C | 8 | A |
| Gate-Source Voltage (VGS) | ±30 | V |
| Avalanche Current (IAS) | 2.5 | A |
| Single Pulse Avalanche Energy (EAS) | 200 | mJ |
| Gate Threshold Voltage (VGS(th)) | 3-5 | V |
| Input Capacitance (Ciss) | 400 | pF |
| Output Capacitance (Coss) | 100 | pF |
| Reverse Transfer Capacitance (Crss) | 10 | pF |
Key Features
- Extremely low on-resistance (RDS(on)) of 0.9 Ω typical.
- High dv/dt and avalanche capabilities.
- Low input capacitance and gate charge.
- Low gate input resistance.
- 100% avalanche tested.
- Proprietary strip technique enhancing dynamic performance.
- Available in D²PAK package with tape and reel packaging option.
- ECOPACK® packages with lead-free second level interconnect.
Applications
The STB8NM60T4 is designed for various high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Industrial and automotive systems requiring high reliability and efficiency.
- Uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
Q & A
- What is the maximum drain-source voltage of the STB8NM60T4?
The maximum drain-source voltage (VDSS) is 600 V. - What is the typical on-resistance of the STB8NM60T4?
The typical on-resistance (RDS(on)) is 0.9 Ω. - What is the continuous drain current rating at 25°C for the STB8NM60T4?
The continuous drain current (ID) at 25°C is 8 A. - What is the gate-source voltage range for the STB8NM60T4?
The gate-source voltage (VGS) range is ±30 V. - What is the avalanche current rating for the STB8NM60T4?
The avalanche current (IAS) is 2.5 A. - What is the single pulse avalanche energy for the STB8NM60T4?
The single pulse avalanche energy (EAS) is 200 mJ. - What package types are available for the STB8NM60T4?
The STB8NM60T4 is available in D²PAK package with tape and reel packaging option. - What are the key benefits of the MDmesh™ technology used in the STB8NM60T4?
The MDmesh™ technology offers low on-resistance, high dv/dt, and excellent avalanche characteristics, along with enhanced dynamic performance due to the proprietary strip technique. - Is the STB8NM60T4 suitable for automotive applications?
While it is not specifically marked as automotive-grade, it can be used in various high-power applications, but it is important to verify its suitability for specific automotive requirements. - What is the significance of ECOPACK® packaging for the STB8NM60T4?
The ECOPACK® packaging ensures lead-free second level interconnect, meeting environmental requirements and compliance with JEDEC Standard JESD97.
